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| Фотографии | Производитель. Часть # | Акции | Цены | А | Таблицы данных | Packaging | Series | ProductStatus | FETType | FETFeature | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | InputCapacitance(Ciss)(Max)@Vds | Power-Max | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRFI4212H-117PXKMA1MOSFET 2N-CH 100V 11A TO220-5 |
2218 | 2.66 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | 2 N-Channel (Dual) | Standard | 100V | 11A (Tc) | 72.5mOhm @ 6.6A, 10V | 5V @ 250µA | 18nC @ 10V | 490pF @ 50V | 18W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
TQM300NB06DCR RLG60V, 25A, DUAL N-CHANNEL POWER M |
2887 | 3.24 |
ДобавитьНемедленный |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | Active | 2 N-Channel (Dual) | Standard | 60V | 6A (Ta), 25A (Tc) | 30mOhm @ 6A, 10V | 3.8V @ 250µA | 20nC @ 10V | 1020pF @ 30V | 2.5W (Ta), 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | |
|
IRFF9211AUTOMOTIVE HEXFET P-CHANNEL |
3781 | 0.00 |
ДобавитьНемедленный |
Datenblatt |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
FDPC8011SMOSFET 2N-CH 25V 13A/27A 8PQFN |
3377 | 3.75 |
ДобавитьНемедленный |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT),Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
|
FDP15N50F10215A, 500V, 0.38OHM, N CHANNEL |
2243 | 0.00 |
ДобавитьНемедленный |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
|
FDMC8097ACMOSFET N/P-CH 150V |
3677 | 2.13 |
ДобавитьНемедленный |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT),Bulk | PowerTrench® | Active | N and P-Channel | Standard | 150V | 2.4A (Ta), 900mA (Tc) | 155mOhm @ 2.4A, 10V | 4V @ 250µA | 6.2nC @ 10V | 395pF @ 75V | 1.9W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRFI4019H-117PXKMA1MOSFET 2N-CH 150V 8.7A TO220-5 |
3872 | 3.42 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | 2 N-Channel (Dual) | Standard | 150V | 8.7A (Tc) | 95mOhm @ 5.2A, 10V | 4.9V @ 50µA | 20nC @ 10V | 810pF @ 25V | 18W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
IRFI4020H-117PXKMA1MOSFET 2N-CH 200V 9.1A TO-220 |
2630 | 3.78 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | 2 N-Channel (Dual) | Standard | 200V | 9.1A (Tc) | 100mOhm @ 5.5A, 10V | 4.9V @ 100µA | 29nC @ 10V | 1240pF @ 25V | 21W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
SPF0004DUAL MOSFETS WITH ZENER DIODE 27 |
3047 | 6.76 |
ДобавитьНемедленный |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | Active | 2 N-Channel (Dual) | Standard | 275V | 6A (Ta) | 260mOhm @ 6A, 10V | 2.6V @ 1mA | - | 960pF @ 10V | 2.5W (Tc) | 150°C (TJ) | Surface Mount |
|
NTMFD5C446NLT1GT6 40V LL S08FL DS |
3537 | 3.71 |
ДобавитьНемедленный |
Datenblatt |
Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 N-Channel (Dual) | Standard | 40V | 25A (Ta), 145A (Tc) | 2.65mOhm @ 20A, 10V | 2.2V @ 90µA | 54nC @ 10V | 3170pF @ 25V | 3.5W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
EPC2100ENGRTGANFET 2 N-CH 30V 9.5A/38A DIE |
3792 | 5.18 |
ДобавитьНемедленный |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Active | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 30V | 10A (Ta), 40A (Ta) | 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V | 2.5V @ 4mA, 2.5V @ 16mA | 4.9nC @ 15V, 19nC @ 15V | 475pF @ 15V, 1960pF @ 15V | - | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
FMM75-01FMOSFET 2N-CH 100V 75A I4-PAC-5 |
3761 | 22.03 |
ДобавитьНемедленный |
Datenblatt |
Tube | HiPerFET™ | Active | 2 N-Channel (Dual) | Standard | 100V | 75A | 25mOhm @ 50A, 10V | 4V @ 4mA | 180nC @ 10V | - | - | -55°C ~ 150°C (TJ) | Through Hole |
|
|
MSC017SMA120JMOSFET SIC 1200V 17 MOHM SOT-227 |
2191 | 68.25 |
ДобавитьНемедленный |
Datenblatt |
Bulk | - | Active | - | - | - | - | - | - | - | - | - | - | - |
|
|
NXH040P120MNF1PTGPIM F1 SIC HALFBRIDGE 1200V 40MO |
2349 | 87.33 |
ДобавитьНемедленный |
Datenblatt |
Tray | - | Active | 2 N-Channel (Dual) Common Source | Silicon Carbide (SiC) | 1200V (1.2kV) | 30A (Tc) | 56mOhm @ 25A, 20V | 4.3V @ 10mA | 122.1nC @ 20V | 1505pF @ 800V | 74W | -40°C ~ 150°C (TJ) | Chassis Mount |
|
|
NXH040F120MNF1PTGPIM F1 SIC FULL BRIDGE 1200V 40M |
2369 | 113.79 |
ДобавитьНемедленный |
Datenblatt |
Tray | - | Active | 4 N-Channel | Silicon Carbide (SiC) | 1200V (1.2kV) | 30A (Tc) | 56mOhm @ 25A, 20V | 4.3V @ 10mA | 122.1nC @ 20V | 1505pF @ 800V | 74W (Tj) | -40°C ~ 175°C (TJ) | Chassis Mount |
|
|
NXH020P120MNF1PTGPIM F1 SIC HALFBRIDGE 1200V 20MO |
2800 | 113.79 |
ДобавитьНемедленный |
Datenblatt |
Tray | - | Active | 2 N-Channel (Dual) Common Source | Silicon Carbide (SiC) | 1200V (1.2kV) | 51A (Tc) | 30mOhm @ 50A, 20V | 4.3V @ 20mA | 213.5nC @ 20V | 2420pF @ 800V | 119W (Tj) | -40°C ~ 150°C (TJ) | Chassis Mount |
|
|
NXH010P90MNF1PTGPIM F1 SIC HALFBRIDGE 900V 10MOH |
2890 | 121.35 |
ДобавитьНемедленный |
Datenblatt |
Tray | - | Active | 2 N-Channel (Dual) Common Source | Silicon Carbide (SiC) | 900V | 154A (Tc) | 14mOhm @ 100A, 15V | 4.3V @ 40mA | 546.4nC @ 15V | 7007pF @ 450V | 328W (Tj) | -40°C ~ 150°C (TJ) | Chassis Mount |
|
|
NXH010P120MNF1PTGPIM F1 SIC HALFBRIDGE 1200V 10MO |
2051 | 145.82 |
ДобавитьНемедленный |
Datenblatt |
Tray | - | Active | 2 N-Channel (Dual) Common Source | Silicon Carbide (SiC) | 1200V (1.2kV) | 114A (Tc) | 14mOhm @ 100A, 20V | 4.3V @ 40mA | 454nC @ 20V | 4707pF @ 800V | 250W (Tj) | -40°C ~ 150°C (TJ) | Chassis Mount |
|
|
MSCSM70AM19T1AGPM-MOSFET-SIC-SP1F |
3586 | 106.74 |
ДобавитьНемедленный |
Bulk | - | Active | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 700V | 124A (Tc) | 19mOhm @ 40A, 20V | 2.4V @ 4mA | 215nC @ 20V | 4500pF @ 700V | 365W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | |
|
|
MSCSM70TLM44C3AGPM-MOSFET-SIC-SBD-SP3F |
3776 | 149.53 |
ДобавитьНемедленный |
Bulk | - | Active | 4 N-Channel (Three Level Inverter) | Silicon Carbide (SiC) | 700V | 58A (Tc) | 44mOhm @ 30A, 20V | 2.7V @ 2mA | 99nC @ 20V | 2010pF @ 700V | 176W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount |
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