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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
VS-40HFR20

VS-40HFR20

DIODE GEN PURP 200V 40A DO203AB

Vishay General Semiconductor - Diodes Division

3181 5.13
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VS-40HFR20

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 9 mA @ 200 V 200 V 40A -65°C ~ 190°C 1.3 V @ 125 A
VS-1N1186A

VS-1N1186A

DIODE GEN PURP 200V 40A DO203AB

Vishay General Semiconductor - Diodes Division

3833 0.00
- +

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VS-1N1186A

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 2.5 mA @ 200 V 200 V 40A -65°C ~ 200°C 1.3 V @ 126 A
FESF8CTHE3_A/P

FESF8CTHE3_A/P

DIODE GEN PURP 150V 8A ITO220AC

Vishay General Semiconductor - Diodes Division

3622 0.94
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FESF8CTHE3_A/P

Datenblatt

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 35 ns 10 µA @ 150 V 150 V 8A -55°C ~ 150°C 950 mV @ 8 A
FR12J05

FR12J05

DIODE GEN PURP 600V 12A DO4

GeneSiC Semiconductor

2611 7.68
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FR12J05

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 500 ns 25 µA @ 100 V 600 V 12A -65°C ~ 150°C 800 mV @ 12 A
VS-60EPF04-M3

VS-60EPF04-M3

DIODE GEN PURP 400V 60A TO247AC

Vishay General Semiconductor - Diodes Division

2189 6.79
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VS-60EPF04-M3

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 180 ns 100 µA @ 400 V 400 V 60A -40°C ~ 150°C 1.3 V @ 60 A
VS-12TQ035STRR-M3

VS-12TQ035STRR-M3

DIODE SCHOTTKY 35V 15A D2PAK

Vishay General Semiconductor - Diodes Division

3113 0.85
- +

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VS-12TQ035STRR-M3

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 900pF @ 5V, 1MHz - 1.75 mA @ 35 V 35 V 15A -55°C ~ 155°C 560 mV @ 15 A
VS-16FL40S02

VS-16FL40S02

DIODE GEN PURP 400V 16A DO203AA

Vishay General Semiconductor - Diodes Division

2996 5.14
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VS-16FL40S02

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 200 ns 50 µA @ 400 V 400 V 16A -65°C ~ 150°C 1.4 V @ 16 A
CDLL5819E3

CDLL5819E3

DIODE SCHOTTKY 45V 1A DO213AB

Microchip Technology

3644 8.01
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CDLL5819E3

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 70pF @ 5V, 1MHz - 50 µA @ 45 V 45 V 1A -65°C ~ 125°C 490 mV @ 1 A
FESF8DTHE3_A/P

FESF8DTHE3_A/P

DIODE GEN PURP 200V 8A ITO220AC

Vishay General Semiconductor - Diodes Division

3229 0.94
- +

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FESF8DTHE3_A/P

Datenblatt

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 35 ns 10 µA @ 200 V 200 V 8A -55°C ~ 150°C 950 mV @ 8 A
JANTXV1N4249

JANTXV1N4249

DIODE GEN PURP 1KV 1A AXIAL

Microchip Technology

3212 7.69
- +

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JANTXV1N4249

Datenblatt

Bulk Military, MIL-PRF-19500/286 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 5 µs 1 µA @ 1000 V 1000 V 1A -65°C ~ 175°C 1.3 V @ 3 A
VS-60EPF06-M3

VS-60EPF06-M3

DIODE GEN PURP 600V 60A TO247AC

Vishay General Semiconductor - Diodes Division

2376 6.79
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VS-60EPF06-M3

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 180 ns 100 µA @ 600 V 600 V 60A -40°C ~ 150°C 1.3 V @ 60 A
VS-12TQ045STRR-M3

VS-12TQ045STRR-M3

DIODE SCHOTTKY 45V 15A D2PAK

Vishay General Semiconductor - Diodes Division

2242 0.85
- +

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VS-12TQ045STRR-M3

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 900pF @ 5V, 1MHz - 1.75 mA @ 45 V 45 V 15A -55°C ~ 150°C 560 mV @ 15 A
VS-6FR120

VS-6FR120

DIODE GEN PURP 1.2KV 6A DO203AA

Vishay General Semiconductor - Diodes Division

2084 5.16
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VS-6FR120

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 12 mA @ 1200 V 1200 V 6A -65°C ~ 175°C 1.1 V @ 19 A
CD3A30

CD3A30

DIODE SMALL-SIGNAL SCHOTTKY

Microchip Technology

3695 8.01
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CD3A30

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 30 V 30 V 3A -65°C ~ 125°C 550 mV @ 3 A
FESF8FTHE3_A/P

FESF8FTHE3_A/P

DIODE GEN PURP 300V 8A ITO220AC

Vishay General Semiconductor - Diodes Division

2220 0.94
- +

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FESF8FTHE3_A/P

Datenblatt

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 50 ns 10 µA @ 300 V 300 V 8A -55°C ~ 150°C 1.3 V @ 8 A
VS-40HFLR20S02

VS-40HFLR20S02

DIODE GEN PURP 200V 40A DO203AB

Vishay General Semiconductor - Diodes Division

2018 7.71
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VS-40HFLR20S02

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - 200 ns 100 µA @ 200 V 200 V 40A -40°C ~ 125°C 1.95 V @ 40 A
VS-60EPF10-M3

VS-60EPF10-M3

DIODE GEN PURP 1KV 60A TO247AC

Vishay General Semiconductor - Diodes Division

3428 6.79
- +

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VS-60EPF10-M3

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 480 ns 100 µA @ 1000 V 1000 V 60A -40°C ~ 150°C 1.4 V @ 60 A
VS-30WQ10FNTRLHM3

VS-30WQ10FNTRLHM3

DIODE SCHOTTKY DPAK

Vishay General Semiconductor - Diodes Division

3087 0.85
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VS-30WQ10FNTRLHM3

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 92pF @ 5V, 1MHz - 1 mA @ 100 V 100 V 3.5A -40°C ~ 150°C 810 mV @ 3 A
CD5196

CD5196

SIGNAL/COMPUTER DIODE

Microchip Technology

3151 5.16
- +

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CD5196

Datenblatt

Tape & Reel (TR) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount - - 25 nA @ 225 V 250 V 200mA -65°C ~ 175°C 1 V @ 100 mA
CD3A20

CD3A20

DIODE SMALL-SIGNAL SCHOTTKY

Microchip Technology

2495 8.01
- +

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CD3A20

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 20 V 20 V 3A -65°C ~ 125°C 550 mV @ 3 A
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