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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
RFN10TB4SNZC9

RFN10TB4SNZC9

SUPER FAST RECOVERY DIODE : RFN1

Rohm Semiconductor

3615 1.69
- +

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Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 30 ns 10 µA @ 430 V 430 V 10A 150°C 1.55 V @ 10 A
BYV98-150-TR

BYV98-150-TR

DIODE AVALANCHE 150V 4A SOD64

Vishay General Semiconductor - Diodes Division

3954 0.57
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BYV98-150-TR

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole - 35 ns 10 µA @ 150 V 150 V 4A -55°C ~ 175°C 1.1 V @ 5 A
1N3893

1N3893

DIODE GEN PURP 600V 12A DO4

GeneSiC Semiconductor

2926 7.68
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1N3893

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 200 ns 25 µA @ 50 V 600 V 12A -65°C ~ 150°C 1.4 V @ 12 A
VS-60APF02-M3

VS-60APF02-M3

DIODE GEN PURP 200V 60A TO247AC

Vishay General Semiconductor - Diodes Division

2768 6.79
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VS-60APF02-M3

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 180 ns 100 µA @ 200 V 200 V 60A -40°C ~ 150°C 1.3 V @ 60 A
VS-80PFR120W

VS-80PFR120W

DIODE GEN PURP 1.2KV 80A DO203AB

Vishay General Semiconductor - Diodes Division

3063 5.12
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VS-80PFR120W

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Stud Mount - - - 1200 V 80A -55°C ~ 180°C 1.4 V @ 220 A
JANTX1N5554/TR

JANTX1N5554/TR

STD RECTIFIER

Microchip Technology

3011 7.97
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JANTX1N5554/TR

Datenblatt

Tape & Reel (TR) Military, MIL-PRF-19500/420 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 2 µs 2 µA @ 1 V 1000 V 5A -65°C ~ 175°C 1.3 V @ 9 A
SBLF10L25-E3/45

SBLF10L25-E3/45

DIODE SCHOTTKY 25V 10A ITO220AC

Vishay General Semiconductor - Diodes Division

3866 0.94
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SBLF10L25-E3/45

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 800 µA @ 25 V 25 V 10A -65°C ~ 150°C 460 mV @ 10 A
FR12B05

FR12B05

DIODE GEN PURP 100V 12A DO4

GeneSiC Semiconductor

2295 7.68
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FR12B05

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 500 ns 25 µA @ 100 V 100 V 12A -65°C ~ 150°C 800 mV @ 12 A
VS-60APF06-M3

VS-60APF06-M3

DIODE GEN PURP 600V 60A TO247AC

Vishay General Semiconductor - Diodes Division

3878 6.79
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VS-60APF06-M3

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 180 ns 100 µA @ 600 V 600 V 60A -40°C ~ 150°C 1.3 V @ 60 A
1N5622

1N5622

DIODE GEN PURP 1KV 1A AXIAL

Microchip Technology

2505 5.13
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1N5622

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 2 µs 500 nA @ 1000 V 1000 V 1A -65°C ~ 200°C 1.3 V @ 3 A
JAN1N5809US

JAN1N5809US

DIODE GEN PURP 100V 6A B-MELF

Microchip Technology

2892 7.98
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JAN1N5809US

Datenblatt

Bulk Military, MIL-PRF-19500/477 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 60pF @ 10V, 1MHz 30 ns 5 µA @ 100 V 100 V 6A -65°C ~ 175°C 875 mV @ 4 A
FESF8ATHE3_A/P

FESF8ATHE3_A/P

DIODE GEN PURP 50V 8A ITO220AC

Vishay General Semiconductor - Diodes Division

2942 0.94
- +

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FESF8ATHE3_A/P

Datenblatt

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 35 ns 10 µA @ 50 V 50 V 8A -55°C ~ 150°C 950 mV @ 8 A
FR12D05

FR12D05

DIODE GEN PURP 200V 12A DO4

GeneSiC Semiconductor

2038 7.68
- +

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FR12D05

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 500 ns 25 µA @ 100 V 200 V 12A -65°C ~ 150°C 800 mV @ 12 A
VS-60APF10-M3

VS-60APF10-M3

DIODE GEN PURP 1KV 60A TO247AC

Vishay General Semiconductor - Diodes Division

3361 6.79
- +

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VS-60APF10-M3

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 480 ns 100 µA @ 1000 V 1000 V 60A -40°C ~ 150°C 1.4 V @ 60 A
JANTX1N5619/TR

JANTX1N5619/TR

RECTIFIER UFR,FRR

Microchip Technology

2690 5.13
- +

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Tape & Reel (TR) Military, MIL-PRF-19500/429 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 250 ns 500 nA @ 600 V 600 V 1A -65°C ~ 175°C 1.6 V @ 3 A
JAN1N5811US

JAN1N5811US

DIODE GEN PURP 150V 6A B-MELF

Microchip Technology

3369 7.98
- +

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Немедленный

JAN1N5811US

Datenblatt

Bulk Military, MIL-PRF-19500/477 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 60pF @ 10V, 1MHz 30 ns 5 µA @ 150 V 150 V 6A -65°C ~ 175°C 875 mV @ 4 A
FESF8BTHE3_A/P

FESF8BTHE3_A/P

DIODE GEN PURP 100V 8A ITO220AC

Vishay General Semiconductor - Diodes Division

2776 0.94
- +

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FESF8BTHE3_A/P

Datenblatt

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 35 ns 10 µA @ 100 V 100 V 8A -55°C ~ 150°C 950 mV @ 8 A
FR12G05

FR12G05

DIODE GEN PURP 400V 12A DO4

GeneSiC Semiconductor

3773 7.68
- +

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Немедленный

FR12G05

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 500 ns 25 µA @ 100 V 400 V 12A -65°C ~ 150°C 800 mV @ 12 A
VS-60EPF02-M3

VS-60EPF02-M3

DIODE GEN PURP 200V 60A TO247AC

Vishay General Semiconductor - Diodes Division

2535 6.79
- +

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VS-60EPF02-M3

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 180 ns 100 µA @ 200 V 200 V 60A -40°C ~ 150°C 1.3 V @ 60 A
VS-12TQ035STRL-M3

VS-12TQ035STRL-M3

DIODE SCHOTTKY 35V 15A D2PAK

Vishay General Semiconductor - Diodes Division

3357 0.85
- +

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VS-12TQ035STRL-M3

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 900pF @ 5V, 1MHz - 1.75 mA @ 35 V 35 V 15A -55°C ~ 150°C 560 mV @ 15 A
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