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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
1N5805/TR

1N5805/TR

RECTIFIER UFR,FRR

Microchip Technology

2034 5.12
- +

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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 10V, 1MHz 25 ns 1 µA @ 125 V 125 V 1A -65°C ~ 125°C 875 mV @ 1 A
FFSB20120A

FFSB20120A

DIODE SBD 10A 120V D2PAK-3

onsemi

3842 7.94
- +

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FFSB20120A

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 1220pF @ 1V, 100KHz - 200 µA @ 1200 V 1200 V 32A (DC) -55°C ~ 175°C 1.75 V @ 20 A
VI30120SG-E3/4W

VI30120SG-E3/4W

DIODE SCHOTTKY 120V 30A TO262AA

Vishay General Semiconductor - Diodes Division

3106 0.94
- +

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VI30120SG-E3/4W

Datenblatt

Tube TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 120 V 120 V 30A -40°C ~ 150°C 1.28 V @ 30 A
VF20120S-M3/4W

VF20120S-M3/4W

DIODE SCHOTTKY 20A 120V ITO220AB

Vishay General Semiconductor - Diodes Division

2007 0.57
- +

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VF20120S-M3/4W

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 300 µA @ 120 V 120 V 20A -55°C ~ 150°C 1.12 V @ 20 A
VS-97PF120

VS-97PF120

DIODE GEN PURP 1.2KV 95A DO203AB

Vishay General Semiconductor - Diodes Division

2714 7.68
- +

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VS-97PF120

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - - 1200 V 95A -55°C ~ 180°C 1.4 V @ 267 A
VS-80PF140

VS-80PF140

DIODE GEN PURP 1.4KV 80A DO203AB

Vishay General Semiconductor - Diodes Division

3551 6.76
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VS-80PF140

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - - 1400 V 80A -55°C ~ 150°C 1.46 V @ 220 A
1N5804/TR

1N5804/TR

RECTIFIER UFR,FRR

Microchip Technology

3611 5.12
- +

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1N5804/TR

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 10V, 1MHz 25 ns 1 µA @ 100 V 100 V 1A -65°C ~ 175°C 875 mV @ 1 A
GB10MPS17-247

GB10MPS17-247

SIC DIODE 1700V 10A TO-247-2

GeneSiC Semiconductor

3402 7.95
- +

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GB10MPS17-247

Datenblatt

Tube SiC Schottky MPS™ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Not For New Designs Through Hole 669pF @ 1V, 1MHz 0 ns 12 µA @ 1700 V 1700 V 50A (DC) -55°C ~ 175°C 1.8 V @ 10 A
VS-15ETL06HN3

VS-15ETL06HN3

DIODE GEN PURP 600V 15A TO220AC

Vishay General Semiconductor - Diodes Division

2178 0.94
- +

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VS-15ETL06HN3

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101, FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 220 ns 10 µA @ 600 V 600 V 15A -65°C ~ 175°C 1.05 V @ 15 A
BYV98-150-TAP

BYV98-150-TAP

DIODE AVALANCHE 150V 4A SOD64

Vishay General Semiconductor - Diodes Division

2685 0.57
- +

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BYV98-150-TAP

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole - 35 ns 10 µA @ 150 V 150 V 4A -55°C ~ 175°C 1.1 V @ 5 A
VS-97PFR120

VS-97PFR120

DIODE GEN PURP 1.2KV 95A DO203AB

Vishay General Semiconductor - Diodes Division

2889 7.68
- +

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VS-97PFR120

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - - 1200 V 95A -55°C ~ 180°C 1.4 V @ 267 A
VS-95PF120

VS-95PF120

DIODE GEN PURP 1.2KV 95A DO203AB

Vishay General Semiconductor - Diodes Division

2389 6.76
- +

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Немедленный

VS-95PF120

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - - 1200 V 95A -55°C ~ 180°C 1.4 V @ 267 A
1N5803/TR

1N5803/TR

RECTIFIER UFR,FRR

Microchip Technology

3278 5.12
- +

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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 10V, 1MHz 25 ns 1 µA @ 75 V 75 V 1A -65°C ~ 175°C 875 mV @ 1 A
JANTXV1N4246

JANTXV1N4246

DIODE GEN PURP 400V 1A AXIAL

Microchip Technology

3223 7.95
- +

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JANTXV1N4246

Datenblatt

Bulk Military, MIL-PRF-19500/286 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 5 µs 1 µA @ 400 V 400 V 1A -65°C ~ 175°C 1.3 V @ 3 A
RFUH10TB4SNZC9

RFUH10TB4SNZC9

SUPER FAST RECOVERY DIODE : RFUH

Rohm Semiconductor

2282 1.69
- +

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Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 25 ns 10 µA @ 430 V 430 V 10A 150°C 1.7 V @ 10 A
BYW172G-TAP

BYW172G-TAP

DIODE AVALANCHE 400V 3A SOD64

Vishay General Semiconductor - Diodes Division

3742 0.57
- +

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Немедленный

BYW172G-TAP

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole - 100 ns 1 µA @ 400 V 400 V 3A -55°C ~ 175°C 1.5 V @ 9 A
1N3890

1N3890

DIODE GEN PURP 100V 12A DO4

GeneSiC Semiconductor

3863 7.68
- +

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1N3890

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 200 ns 25 µA @ 50 V 100 V 12A -65°C ~ 150°C 1.4 V @ 12 A
VS-95PFR120

VS-95PFR120

DIODE GEN PURP 1.2KV 95A DO203AB

Vishay General Semiconductor - Diodes Division

2090 6.76
- +

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Немедленный

VS-95PFR120

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - - 1200 V 95A -55°C ~ 180°C 1.4 V @ 267 A
VS-80PF120W

VS-80PF120W

DIODE GEN PURP 1.2KV 80A DO203AB

Vishay General Semiconductor - Diodes Division

2862 5.12
- +

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Немедленный

VS-80PF120W

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - - 1200 V 80A -55°C ~ 180°C 1.4 V @ 220 A
JAN1N5620US

JAN1N5620US

DIODE GEN PURP 800V 1A D5A

Microchip Technology

2040 7.97
- +

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Немедленный

JAN1N5620US

Datenblatt

Bulk Military, MIL-PRF-19500/427 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - 2 µs 500 nA @ 800 V 800 V 1A -65°C ~ 200°C 1.3 V @ 3 A
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