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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
SBRFP10U60D1-13

SBRFP10U60D1-13

SUPERBARRIERRECTIFIERTO252T&R2.5

Diodes Incorporated

210 0.64
- +

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Немедленный

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, SBR® RoHS Fast Recovery =< 500ns, > 200mA (Io) Super Barrier Active Surface Mount - 50 ns 200 µA @ 60 V 60 V 10A -55°C ~ 150°C 520 mV @ 10 A
EGP30B

EGP30B

RECTIFIER DIODE, 3A, 100V, DO-20

Rochester Electronics, LLC

2400 0.28
- +

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EGP30B

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 95pF @ 4V, 1MHz 50 ns 5 µA @ 100 V 100 V 3A -65°C ~ 150°C 950 mV @ 3 A
BYG20J

BYG20J

SF 1.5A, CASE TYPE: SMA-L

EIC SEMICONDUCTOR INC.

5000 0.21
- +

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BYG20J

Datenblatt

Bag RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Surface Mount - 75 ns 1 µA @ 600 V 600 V 1.5A -55°C ~ 150°C 1.4 V @ 1.5 A
VS-10BQ040-M3/5BT

VS-10BQ040-M3/5BT

DIODE SCHOTTKY 40V 1A SMB

Vishay General Semiconductor - Diodes Division

2163 0.43
- +

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VS-10BQ040-M3/5BT

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 115pF @ 5V, 1MHz - 100 µA @ 40 V 40 V 1A -55°C ~ 150°C 450 mV @ 1 A
BYV29B-500,118

BYV29B-500,118

DIODE GEN PURP 500V 9A D2PAK

WeEn Semiconductors

400 1.08
- +

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BYV29B-500,118

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 60 ns 50 µA @ 500 V 500 V 9A 150°C (Max) 1.25 V @ 8 A
1N4003G-T

1N4003G-T

DIODE GEN PURP 200V 1A DO41

Diodes Incorporated

182 0.39
- +

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1N4003G-T

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 8pF @ 4V, 1MHz 2 µs 5 µA @ 200 V 200 V 1A -65°C ~ 175°C 1 V @ 1 A
UF5407-E3/54

UF5407-E3/54

DIODE GEN PURP 800V 3A DO201AD

Vishay General Semiconductor - Diodes Division

166 0.64
- +

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UF5407-E3/54

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 36pF @ 4V, 1MHz 75 ns 10 µA @ 800 V 800 V 3A -55°C ~ 150°C 1.7 V @ 3 A
AR2502

AR2502

DIODE GEN PURP 200V 25A MICRODE

EIC SEMICONDUCTOR INC.

1500 0.28
- +

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AR2502

Datenblatt

Bag Automotive RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - - 5 µA @ 200 V 200 V 25A -65°C ~ 175°C 1 V @ 25 A
1N5818BULK

1N5818BULK

DIODE SCHOTTKY 30V 1A DO41

EIC SEMICONDUCTOR INC.

4000 0.21
- +

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1N5818BULK

Datenblatt

Bag RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 110pF @ 4V, 1MHz - 1 mA @ 30 V 30 V 1A -65°C ~ 125°C 550 mV @ 1 A
RR1LAM4STR

RR1LAM4STR

DIODE GEN PURP 400V 1A PMDTM

Rohm Semiconductor

3462 0.43
- +

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RR1LAM4STR

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - - 10 µA @ 400 V 400 V 1A 150°C (Max) 1.1 V @ 1 A
RFUS10TF4S

RFUS10TF4S

DIODE GEN PURP 430V 10A TO220NFM

Rohm Semiconductor

1378 1.09
- +

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RFUS10TF4S

Datenblatt

Tube,Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - - - 430 V 10A 150°C (Max) -
S15DLWHRVG

S15DLWHRVG

DIODE GEN PURP 200V 1.5A SOD123W

Taiwan Semiconductor Corporation

179 0.39
- +

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S15DLWHRVG

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 4V, 1MHz - 1 µA @ 200 V 200 V 1.5A -55°C ~ 175°C 1.1 V @ 1.5 A
MBRM120ET3G

MBRM120ET3G

DIODE SCHOTTKY 20V 1A POWERMITE

onsemi

3204 0.64
- +

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MBRM120ET3G

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 10 µA @ 20 V 20 V 1A -65°C ~ 150°C 530 mV @ 1 A
SGL1-50

SGL1-50

SchottkyD, 50V, 1A

DComponents

12500 0.28
- +

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SGL1-50

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 500 µA @ 50 V 50 V 1A -50°C ~ 150°C 670 mV @ 1 A
1N5819BULK

1N5819BULK

DIODE SCHOTTKY 40V 1A DO41

EIC SEMICONDUCTOR INC.

3000 0.21
- +

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Немедленный

1N5819BULK

Datenblatt

Bag RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 110pF @ 4V, 1MHz - 1 mA @ 40 V 40 V 1A -65°C ~ 125°C 600 mV @ 1 A
DFLU1200-7

DFLU1200-7

DIODE GP 200V 1A POWERDI123

Diodes Incorporated

2820 0.44
- +

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DFLU1200-7

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 27pF @ 4V, 1MHz 25 ns 5 µA @ 200 V 200 V 1A -65°C ~ 150°C 980 mV @ 1 A
SK515C V7G

SK515C V7G

DIODE SCHOTTKY 5A 150V DO-214AB

Taiwan Semiconductor Corporation

786 1.09
- +

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Немедленный

SK515C V7G

Datenblatt

Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 300 µA @ 150 V 150 V 5A -55°C ~ 150°C 950 mV @ 5 A
PMEG3005ESFYL

PMEG3005ESFYL

DIODE SCHOTTKY 30V 0.5A SOD962

Nexperia USA Inc.

163 0.39
- +

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Немедленный

PMEG3005ESFYL

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 21pF @ 1V, 1MHz 1.42 ns 9 µA @ 30 V 30 V 500mA 150°C (Max) 720 mV @ 500 mA
BYG20D R3G

BYG20D R3G

DIODE GEN PURP 200V 1.5A DO214AC

Taiwan Semiconductor Corporation

905 0.65
- +

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BYG20D R3G

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 75 ns 1 µA @ 200 V 200 V 1.5A -55°C ~ 150°C 1.4 V @ 1.5 A
BY133-CT

BY133-CT

CUT-TAPE VERSION. STANDARD RECO

DComponents

4945 0.29
- +

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Немедленный

BY133-CT

Datenblatt

Strip RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 1.5 µs 5 µA @ 1300 V 1300 V 1A -50°C ~ 175°C 1.3 V @ 1 A
Total 50121 Records«Prev1... 285286287288289290291292...2507Next»
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