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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
BA158BULK

BA158BULK

DIODE GEN PURP 600V 1A DO41

EIC SEMICONDUCTOR INC.

13000 0.21
- +

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BA158BULK

Datenblatt

Bag RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 150 ns 5 µA @ 600 V 600 V 1A -65°C ~ 150°C 1.3 V @ 1 A
STB20100TR

STB20100TR

DIODE SCHOTTKY 100V D2PAK

SMC Diode Solutions

248 1.02
- +

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STB20100TR

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 1 mA @ 100 V 100 V - -55°C ~ 150°C 750 mV @ 20 A
PMEG4010AESBYL

PMEG4010AESBYL

DIODE SCHOTTKY 40V 1A SOD993

Nexperia USA Inc.

128 0.38
- +

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PMEG4010AESBYL

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 75pF @ 1V, 1MHz 3.1 ns 1250 µA @ 40 V 40 V 1A 150°C (Max) 505 mV @ 1 A
S3BB R5G

S3BB R5G

DIODE GEN PURP 100V 3A DO214AA

Taiwan Semiconductor Corporation

370 0.63
- +

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S3BB R5G

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 40pF @ 4V, 1MHz 1.5 µs 10 µA @ 100 V 100 V 3A -55°C ~ 150°C 1.15 V @ 3 A
MUR460FFG

MUR460FFG

RECTIFIER DIODE, 4A, 600V, DO-20

Rochester Electronics, LLC

4000 0.27
- +

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MUR460FFG

Datenblatt

Bulk SWITCHMODE™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 75 ns 10 µA @ 600 V 600 V 4A -65°C ~ 175°C 1.28 V @ 4 A
FR105BULK

FR105BULK

DIODE GEN PURP 600V 1A DO41

EIC SEMICONDUCTOR INC.

10000 0.21
- +

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FR105BULK

Datenblatt

Bag RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz 250 ns 5 µA @ 600 V 600 V 1A -65°C ~ 150°C 1.3 V @ 1 A
SBRT25U60SLP-13

SBRT25U60SLP-13

DIODE SBR 60V 25A POWERDI5060-8

Diodes Incorporated

567 1.03
- +

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SBRT25U60SLP-13

Datenblatt

Tape & Reel (TR),Cut Tape (CT) TrenchSBR RoHS Standard Recovery >500ns, > 200mA (Io) Super Barrier Active Surface Mount - - 400 µA @ 60 V 60 V 25A -55°C ~ 150°C 550 mV @ 25 A
TSD1G

TSD1G

1A 400V ESD CAPABILITY RECTIFIER

Taiwan Semiconductor Corporation

1000 0.39
- +

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TSD1G

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 14pF @ 4V, 1MHz - 1 µA @ 400 V 400 V 1A -55°C ~ 175°C -
S3JB R5G

S3JB R5G

DIODE GEN PURP 600V 3A DO214AA

Taiwan Semiconductor Corporation

365 0.63
- +

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S3JB R5G

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 40pF @ 4V, 1MHz 1.5 µs 10 µA @ 600 V 600 V 3A -55°C ~ 150°C 1.15 V @ 3 A
EGP30A

EGP30A

RECTIFIER DIODE, 3A, 50V, DO-201

Rochester Electronics, LLC

3800 0.27
- +

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EGP30A

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 95pF @ 4V, 1MHz 50 ns 5 µA @ 50 V 50 V 3A -65°C ~ 150°C 950 mV @ 3 A
HER101BULK

HER101BULK

DIODE GEN PURP 50V 1A DO41

EIC SEMICONDUCTOR INC.

7000 0.21
- +

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HER101BULK

Datenblatt

Bag RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz 50 ns 5 µA @ 50 V 50 V 1A -65°C ~ 150°C 1.1 V @ 1 A
VS-1EFH02HM3/I

VS-1EFH02HM3/I

DIODE GEN PURP 200V 1A DO219AB

Vishay General Semiconductor - Diodes Division

2657 0.45
- +

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VS-1EFH02HM3/I

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 25 ns 2 µA @ 200 V 200 V 1A -55°C ~ 175°C 930 mV @ 1 A
SBRS8320T3G

SBRS8320T3G

DIODE SCHOTTKY 20V 3A SMC

onsemi

306 1.03
- +

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SBRS8320T3G

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Surface Mount - - 2 mA @ 20 V 20 V 3A -65°C ~ 150°C 500 mV @ 3 A
1N5393-E3/54

1N5393-E3/54

DIODE GEN PURP 200V 1.5A DO204AL

Vishay General Semiconductor - Diodes Division

831 0.39
- +

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1N5393-E3/54

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 2 µs 5 µA @ 200 V 200 V 1.5A -50°C ~ 150°C 1.4 V @ 1.5 A
MUR420-E3/73

MUR420-E3/73

DIODE GEN PURP 200V 4A DO201AD

Vishay General Semiconductor - Diodes Division

209 0.63
- +

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MUR420-E3/73

Datenblatt

Cut Tape (CT),Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 35 ns 5 µA @ 200 V 200 V 4A -65°C ~ 175°C 890 mV @ 4 A
EGP20G

EGP20G

RECTIFIER DIODE, 2A, 400V, DO-15

Rochester Electronics, LLC

3070 0.27
- +

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EGP20G

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 45pF @ 4V, 1MHz 50 ns 5 µA @ 400 V 400 V 2A -65°C ~ 150°C 1.25 V @ 2 A
FR301BULK

FR301BULK

DIODE GEN PURP 50V 3A DO201AD

EIC SEMICONDUCTOR INC.

7000 0.21
- +

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Немедленный

FR301BULK

Datenblatt

Bag RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 150 ns 10 µA @ 50 V 50 V 3A -65°C ~ 150°C 1.3 V @ 3 A
STPS0560Z

STPS0560Z

DIODE SCHOTTKY 60V 500MA SOD123

STMicroelectronics

3087 0.41
- +

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STPS0560Z

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 50 µA @ 60 V 60 V 500mA 150°C (Max) 530 mV @ 500 mA
ES3GB R5G

ES3GB R5G

DIODE GEN PURP 400V 3A DO214AA

Taiwan Semiconductor Corporation

288 1.03
- +

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ES3GB R5G

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 41pF @ 4V, 1MHz 35 ns 10 µA @ 400 V 400 V 3A -55°C ~ 150°C 1.13 V @ 3 A
31DQ04TA

31DQ04TA

3.3A, 40V, DO-201AD, SCHOTTKY

SMC Diode Solutions

888 0.39
- +

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Немедленный

Cut Tape (CT),Tape & Box (TB) RoHS - - Active - - - - - - - -
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