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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
BYD13GBULK

BYD13GBULK

DIODE AVALANCHE 400V 1.4A DO41

EIC SEMICONDUCTOR INC.

5000 0.21
- +

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BYD13GBULK

Datenblatt

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Active Through Hole - - 1 µA @ 400 V 400 V 1.4A 175°C 1.05 V @ 1 A
PMEG6020AELRX

PMEG6020AELRX

DIODE SCHOTTKY 60V 2A CFP3

Nexperia USA Inc.

3208 0.42
- +

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PMEG6020AELRX

Datenblatt

Tape & Reel (TR),Cut Tape (CT),Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 220pF @ 1V, 1MHz 9 ns 700 nA @ 60 V 60 V 2A 175°C (Max) 670 mV @ 2 A
MBR735G

MBR735G

DIODE SCHOTTKY 35V 7.5A TO220-2

onsemi

733 1.05
- +

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MBR735G

Datenblatt

Tube SWITCHMODE™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole - - 100 µA @ 35 V 35 V 7.5A -65°C ~ 175°C 840 mV @ 15 A
PMEG2002ESF,315

PMEG2002ESF,315

DIODE SCHOT 20V 200MA DSN0603-2

Nexperia USA Inc.

322 0.39
- +

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PMEG2002ESF,315

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 25pF @ 1V, 1MHz 1.9 ns 3.5 µA @ 20 V 20 V 200mA 125°C (Max) 490 mV @ 100 mA
CMR1F-10M TR13 PBFREE

CMR1F-10M TR13 PBFREE

DIODE GEN PURP 1000V 1A SMA

Central Semiconductor Corp

857 0.64
- +

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CMR1F-10M TR13 PBFREE

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 15pF @ 4V, 1MHz 500 ns 5 µA @ 1000 V 1000 V 1A -65°C ~ 150°C 1.3 V @ 1 A
SK320SMB

SK320SMB

Schottky, 200V, 3A, 0.90V, 80A

DComponents

18000 0.28
- +

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SK320SMB

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 200 V 200 V 3A -50°C ~ 150°C 900 mV @ 3 A
FR306BULK

FR306BULK

DIODE GEN PURP 800V 3A DO201AD

EIC SEMICONDUCTOR INC.

5000 0.21
- +

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FR306BULK

Datenblatt

Bag RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 500 ns 10 µA @ 800 V 800 V 3A -65°C ~ 150°C 1.3 V @ 3 A
MBRA140T3G

MBRA140T3G

DIODE SCHOTTKY 40V 1A SMA

onsemi

2420 0.42
- +

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MBRA140T3G

Datenblatt

Tape & Reel (TR),Cut Tape (CT),Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 500 µA @ 40 V 40 V 1A -55°C ~ 125°C 550 mV @ 1 A
RFN10BGE3STL

RFN10BGE3STL

RFN10BGE3S IS THE SILICON EPITAX

Rohm Semiconductor

978 1.06
- +

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RFN10BGE3STL

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 30 ns 10 µA @ 350 V 350 V 10A 150°C 1.5 V @ 10 A
CS2G-E3/I

CS2G-E3/I

DIODE GPP 2A 400V DO-214AA SMB

Vishay General Semiconductor - Diodes Division

310 0.39
- +

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CS2G-E3/I

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Surface Mount 12pF @ 4V, 1MHz 2.1 µs 5 µA @ 400 V 400 V 1.6A -55°C ~ 150°C 1.15 V @ 2 A
SB560-E3/73

SB560-E3/73

DIODE SCHOTTKY 60V 5A DO201AD

Vishay General Semiconductor - Diodes Division

789 0.64
- +

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SB560-E3/73

Datenblatt

Cut Tape (CT),Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 60 V 60 V 5A -65°C ~ 150°C 650 mV @ 5 A
ES1J

ES1J

SF Rect, 600V, 1.00A, 35ns

DComponents

450000 0.28
- +

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ES1J

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 35 ns 5 µA @ 600 V 600 V 1A -50°C ~ 150°C 1.7 V @ 1 A
BYD13DBULK

BYD13DBULK

DIODE AVALANCHE 200V 1.4A DO41

EIC SEMICONDUCTOR INC.

5000 0.21
- +

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Немедленный

BYD13DBULK

Datenblatt

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Active Through Hole - - 1 µA @ 200 V 200 V 1.4A 175°C 1.05 V @ 1 A
SK310A-LTP

SK310A-LTP

DIODE SCHOTTKY 100V 3A DO214AC

Micro Commercial Co

4300 0.45
- +

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SK310A-LTP

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 250pF @ 4V, 1MHz - 500 µA @ 100 V 100 V 3A -50°C ~ 125°C 850 mV @ 3 A
SDURF20Q60CT

SDURF20Q60CT

600V20AUFRPACKAGE ITO-220AB

SMC Diode Solutions

1000 1.07
- +

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Немедленный

Tube RoHS - - Active Through Hole - - - - - - -
MUR210G

MUR210G

DIODE GEN PURP 100V 2A AXIAL

onsemi

254 0.39
- +

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MUR210G

Datenblatt

Bulk SWITCHMODE™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 30 ns 2 µA @ 100 V 100 V 2A -65°C ~ 175°C 940 mV @ 2 A
CMR3-02 TR13 PBFREE

CMR3-02 TR13 PBFREE

DIODE GEN PURP 200V 3A SMC

Central Semiconductor Corp

507 0.64
- +

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CMR3-02 TR13 PBFREE

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - - 5 µA @ 200 V 200 V 3A -65°C ~ 175°C 1.2 V @ 3 A
SS32

SS32

RECTIFIER DIODE, SCHOTTKY, 3A, 2

Rochester Electronics, LLC

168219 0.28
- +

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SS32

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 500 µA @ 20 V 20 V 3A -55°C ~ 150°C 500 mV @ 3 A
BYD33GBULK

BYD33GBULK

DIODE AVALANCHE 400V 1.3A DO41

EIC SEMICONDUCTOR INC.

5000 0.21
- +

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Немедленный

BYD33GBULK

Datenblatt

Bag RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole - 250 ns 1 µA @ 400 V 400 V 1.3A -65°C ~ 175°C 1.3 V @ 1 A
MURS120T3G

MURS120T3G

DIODE GEN PURP 200V 2A SMB

onsemi

2475 0.43
- +

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MURS120T3G

Datenblatt

Tape & Reel (TR),Cut Tape (CT),Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 35 ns 2 µA @ 200 V 200 V 2A -65°C ~ 175°C 875 mV @ 1 A
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