Diodes-Rectifiers-Single - Element(Гонконг) Technology Co., Ltd.

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Производитель. Часть #	Акции	Цены	А	Таблицы данных	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
S3D20065A DIODE SCHOTTKY SILICON CARBIDE S SMC Diode Solutions	300	7.06	- + Добавить Немедленный	Datenblatt	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	1200pF @ 0V, 1MHz	0 ns	30 µA @ 650 V	650 V	20A	-55°C ~ 175°C	1.7 V @ 10 A
F1200A Fast Rect., 50V, 12.00A, 200ns DComponents	11000	1.27	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	200 ns	5 µA @ 50 V	50 V	12A	-50°C ~ 150°C	910 mV @ 12 A
SK1840D2R SchottkyD, 40V, 18A DComponents	61600	2.07	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	500 µA @ 40 V	40 V	18A	-50°C ~ 150°C	580 mV @ 18 A
NTE581 R-SI 400V 8A FAST REC NTE Electronics, Inc	1604	3.20	- + Добавить Немедленный	Datenblatt	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	65pF @ 4V, 1MHz	150 ns	10 µA @ 400 V	400 V	8A	-65°C ~ 175°C	1.3 V @ 8 A
FM340-MST-H SCHOKTTY DIODE Formosa Microsemi Co., Ltd.	240000	0.04	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 3A (Io)	Schottky	Active	Surface Mount	-	-	500 µA @ 40 V	-	3A	-55°C ~ 125°C	550 mV @ 3000 mA
SF28-T/R SUPER FAST RECOVERY RECTIFIER DI EIC SEMICONDUCTOR INC.	6000	0.16	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	35 ns	20 µA @ 800 V	800 V	2A	-65°C ~ 150°C	4 V @ 2 A
PCDP15120G1_T0_00001 TO-220AC, SIC Panjit International Inc.	2000	7.07	- + Добавить Немедленный	Datenblatt	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	815pF @ 1V, 1MHz	0 ns	140 µA @ 1200 V	1200 V	15A (DC)	-55°C ~ 175°C	1.7 V @ 15 A
IDDD06G65C6XTMA1 SIC DIODES Rochester Electronics, LLC	2720	1.28	- + Добавить Немедленный	Datenblatt	Bulk	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	302pF @ 1V, 1MHz	0 ns	20 µA @ 420 V	650 V	18A (DC)	-55°C ~ 175°C	-
BY880-50-CT CUT-TAPE VERSION. STANDARD RECO DComponents	1235	2.17	- + Добавить Немедленный	Datenblatt	Strip		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	1.5 µs	5 µA @ 50 V	50 V	8A	-50°C ~ 175°C	1.1 V @ 8 A
RHRU50120 RECTIFIER DIODE Rochester Electronics, LLC	425	3.20	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Chassis Mount	-	100 ns	500 µA @ 1200 V	1200 V	50A	-65°C ~ 175°C	3.2 V @ 50 A
S1M RECTIFIER DIODE, 1A, 1000V, DO-2 Rochester Electronics, LLC	1863721	0.04	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	1.5 µs	5 µA @ 1 V	1000 V	1A	-50°C ~ 150°C	1.1 V @ 1 A
SK15 SCHOTTKY BARRIER RECTIFIER DIODE EIC SEMICONDUCTOR INC.	5000	0.16	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	500 µA @ 50 V	50 V	1A	-40°C ~ 125°C	500 mV @ 1 A
WNSC6D20650WQ SILICON CARBIDE SCHOTTKY DIODE I WeEn Semiconductors	1180	7.07	- + Добавить Немедленный		Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	1.2nF @ 1V, 1MHz	0 ns	100 µA @ 650 V	650 V	20A	175°C	1.4 V @ 20 A
F1200B Fast Rect., 100V, 12.00A, 200ns DComponents	500	1.29	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	200 ns	5 µA @ 100 V	100 V	12A	-50°C ~ 150°C	910 mV @ 12 A
BY255-AQ-CT CUT-TAPE VERSION. STANDARD RECO DComponents	47600	2.37	- + Добавить Немедленный	Datenblatt	Strip		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	1.5 µs	5 µA @ 1300 V	1300 V	3A	-50°C ~ 150°C	1.1 V @ 3 A
WNSC10650WQ SILICON CARBIDE SCHOTTKY DIODE WeEn Semiconductors	1190	3.21	- + Добавить Немедленный	Datenblatt	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	328pF @ 1V, 1MHz	0 ns	60 µA @ 650 V	650 V	10A	175°C	1.7 V @ 10 A
PMEG2005AEL,315 NEXPERIA PMEG2005AEL - RECTIFIER Rochester Electronics, LLC	1217229	0.04	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	25pF @ 1V, 1MHz	-	1.5 mA @ 20 V	20 V	500mA (DC)	150°C (Max)	440 mV @ 500 mA
SUF4006 UF Rect, 800V, 1.00A, 75ns DComponents	4964	0.16	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	75 ns	5 µA @ 800 V	800 V	1A	-50°C ~ 175°C	1.7 V @ 1 A
NTE5934 DIODE GEN PUR 400V 75A PRESS FIT NTE Electronics, Inc	221	7.08	- + Добавить Немедленный	Datenblatt	Bag		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis Mount	-	-	2 µA @ 400 V	400 V	75A	-65°C ~ 215°C	1.15 V @ 75 A
UGB8JT SF Rect, 600V, 8.00A, 35ns DComponents	2200	1.29	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	45 ns	5 µA @ 600 V	600 V	8A	-50°C ~ 150°C	1.75 V @ 8 A