Diodes-Rectifiers-Single - Element(Гонконг) Technology Co., Ltd.

English

Deutsch

Русский

Türkiye

Français

Добро пожаловать Element Technology Co., Ltd.！

+86 15361839241 +86 0755-23603516

Грузовой

Все категории

Другие категории продукции >>

Производитель. Часть #	Акции	Цены	А	Таблицы данных	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
ER1M SF Rect, 1000V, 1.00A, 75ns DComponents	60000	0.16	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	75 ns	5 µA @ 1000 V	1000 V	1A	-50°C ~ 150°C	1.7 V @ 1 A
FM140-N-H SCHOTTKY BARRIER 40V, 1000MA Formosa Microsemi Co., Ltd.	225000	0.04	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 1A (Io)	Schottky	Active	Surface Mount	-	-	500 mA @ 40 V	40 V	1A	-55°C ~ 125°C	500 V @ 1 A
PCDP1265G1_T0_00001 TO-220AC, SIC Panjit International Inc.	2000	3.15	- + Добавить Немедленный	Datenblatt	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	452pF @ 1V, 1MHz	0 ns	80 µA @ 650 V	650 V	12A (DC)	-55°C ~ 175°C	1.7 V @ 12 A
UJ3D06516TS 650V 16A SIC SCHOTTKY DIODE G3, UnitedSiC	676	7.00	- + Добавить Немедленный	Datenblatt	Tube	Gen-III	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	500pF @ 1V, 1MHz	0 ns	100 µA @ 650 V	650 V	16A (DC)	-55°C ~ 175°C	1.7 V @ 16 A
1N645-1 DO 35 4 AMP SILICON RECTFIER Solid State Inc.	8890	1.25	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	50 nA @ 225 V	225 V	400mA	-65°C ~ 175°C	1 V @ 400 mA
KT20K150 Fast Rect., 150V, 20.00A, 300ns DComponents	433	1.98	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	300 ns	5 µA @ 150 V	150 V	20A	-50°C ~ 175°C	980 mV @ 20 A
SOD4007 RECTIFIER DIODE 1KV 1A SOD-123FL NextGen Components	3333000	0.04	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)	SOD-123FL	RoHS	-	Standard	Active	Surface Mount	4pF @ 4V, 1MHz	-	-	1000 V	1A	-55°C ~ 125°C	1.1 V @ 1 A
SB360 RECTIFIER DIODE, SCHOTTKY, 3A, 6 Rochester Electronics, LLC	33667	0.16	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 60 V	60 V	3A	-50°C ~ 150°C	680 mV @ 3 A
SCS110AGC DIODE SCHOTTKY 600V 10A TO220AC Rohm Semiconductor	1018	7.04	- + Добавить Немедленный	Datenblatt	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	430pF @ 1V, 1MHz	0 ns	200 µA @ 600 V	600 V	10A	175°C (Max)	1.7 V @ 10 A
PX1500M ST Rect, 1000V, 15A DComponents	1000	1.25	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	1.5 µs	10 µA @ 1000 V	1000 V	15A	-50°C ~ 175°C	1 V @ 15 A
P2000MTL ST Rect, 1000V, 20A DComponents	1450	2.02	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	1.5 µs	10 µA @ 1000 V	1000 V	20A	-50°C ~ 175°C	1.1 V @ 20 A
SCS210AGHRC DIODE SCHOTTKY 650V 10A TO-220-2 Rohm Semiconductor	798	3.18	- + Добавить Немедленный	Datenblatt	Tube	Automotive, AEC-Q101	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Obsolete	Through Hole	365pF @ 1V, 1MHz	0 ns	200 µA @ 600 V	650 V	10A (DC)	175°C (Max)	1.55 V @ 10 A
BAV21W SWITCHING 250V 250MA SOD-123 NextGen Components	915000	0.04	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)	SOD-123	RoHS	-	Standard	Active	Surface Mount	5pF @ 4V, 1MHz	50 ns	-	250 V	250mA	-55°C ~ 150°C	1.25 V @ 200 mA
FR307T/R DIODE GEN PURP 1000V 3A DO201AD EIC SEMICONDUCTOR INC.	10000	0.16	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	500 ns	10 µA @ 1000 V	1000 V	3A	-65°C ~ 150°C	1.3 V @ 3 A
NXPSC16650B6J SILICON CARBIDE POWER DIODE WeEn Semiconductors	3196	7.06	- + Добавить Немедленный		Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	534pF @ 1V, 1MHz	0 ns	100 µA @ 650 V	650 V	16A	175°C (Max)	1.7 V @ 16 A
IDW40E65D2 IDW40E65 - SILICON POWER DIODE Rochester Electronics, LLC	1485	1.27	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	-	-	Active	-	-	-	-	-	-	-	-
IDH09G65C5XKSA2 SIC DIODES Rochester Electronics, LLC	500	2.03	- + Добавить Немедленный	Datenblatt	Bulk	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	270pF @ 1V, 1MHz	0 ns	160 µA @ 650 V	650 V	9A (DC)	-55°C ~ 175°C	1.7 V @ 9 A
RURU50120 RECTIFIER DIODE Rochester Electronics, LLC	4510	3.20	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Chassis Mount	-	200 ns	500 µA @ 1200 V	1200 V	50A	-65°C ~ 175°C	2.1 V @ 50 A
SOD1H8 Efficiency SOD-123FL 1KV 1A NextGen Components	444000	0.04	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)	SOD-123FL	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	15pF @ 4V, 1MHz	75 ns	5 µA @ 1000 V	1000 V	1A	-55°C ~ 150°C	1.7 V @ 1 A
M2-CT CUT-TAPE VERSION. STANDARD RECO DComponents	7447	0.16	- + Добавить Немедленный	Datenblatt	Strip		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	1.5 µs	5 µA @ 100 V	100 V	1A	-50°C ~ 150°C	1.1 V @ 1 A