Фотографии | Производитель. Часть # | Акции | Цены | А | Таблицы данных | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Package / Case | Capacitance @ Vr, F | Supplier Device Package | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature - Junction | Voltage - Forward (Vf) (Max) @ If |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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NTE517D-15KV FOR MICROWAVE OVEN |
1384 | 6.68 |
ДобавитьНемедленный |
![]() Datenblatt |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 5 µA @ 15000 V | 15000 V | 550mA | -65°C ~ 150°C | 14 V @ 550 mA | |||
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DD1600HV Rect, 16000V, 0.02A, 150ns |
160000 | 1.15 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | - | 150 ns | 5 µA @ 16000 V | 16000 V | 20mA | -50°C ~ 150°C | 40 V @ 10 mA | |||
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SM4004Std Rect, 400V, 1A |
3794 | 0.11 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 1.5 µs | 5 µA @ 400 V | 400 V | 1A | -50°C ~ 175°C | 1.1 V @ 1 A | |||
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US1MFHigh Efficiency SMAF 1KV 1A |
684000 | 0.04 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | SMAF | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 75 ns | 5 µA @ 1000 V | 1000 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | ||
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NTE5815HCR-SI 600V 10AMP |
5589 | 2.99 |
ДобавитьНемедленный |
![]() Datenblatt |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 150pF @ 4V, 1MHz | - | 10 µA @ 600 V | 600 V | 10A | -55°C ~ 125°C | 1 V @ 10 A | |||
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NTE5820R-400 PRV 12A CATH CASE |
132 | 6.69 |
ДобавитьНемедленный |
![]() Datenblatt |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | 400 ns | 25 µA @ 400 V | 400 V | 12A | -65°C ~ 150°C | 1.4 V @ 12 A | |||
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GBPC1208BRIDGE RECTIFIER DIODE, 1 PHASE, |
500 | 1.16 |
ДобавитьНемедленный |
![]() Datenblatt |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |||
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EGL1ASF Rect, 50V, 1.00A, 50ns |
2500 | 0.11 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 5 µA @ 50 V | 50 V | 1A | -50°C ~ 175°C | 1.25 V @ 1 A | |||
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M4RECTIFIER DIODE 400V 1A SMA |
465000 | 0.04 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | SMA | RoHS | - | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | - | - | 400 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | ||
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GI850/MR850R- 50 PRV 3A |
552 | 3.00 |
ДобавитьНемедленный |
![]() Datenblatt |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 28pF @ 4V, 1MHz | 200 ns | 10 µA @ 50 V | 50 V | 3A | -50°C ~ 150°C | 1.25 V @ 3 A | |||
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GP3D020A065ASIC SCHOTTKY DIODE 650V TO220 |
497 | 6.70 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | Amp+™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1247pF @ 1V, 1MHz | - | 75 µA @ 650 V | 650 V | 20A | -55°C ~ 175°C | 1.65 V @ 30 A | ||
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BY550-600-CTCUT-TAPE VERSION. STANDARD RECO |
368750 | 1.19 |
ДобавитьНемедленный |
![]() Datenblatt |
Strip | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 1.5 µs | 5 µA @ 600 V | 600 V | 5A | -50°C ~ 175°C | 1 V @ 5 A | |||
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DO41N4007GA10AGENERAL DIODE DO-41 1KV 1A |
430000 | 0.04 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Box (TB) | DO-41 | RoHS | - | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 150°C | 1.1 V @ 1 A | ||
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GE08MPS06A650V 8A TO-220-2 SIC SCHOTTKY MP |
2000 | 3.02 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 373pF @ 1V, 1MHz | - | - | 650 V | 15A (DC) | -55°C ~ 175°C | - | ||
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IDFW80C65D1XKSA1IDFW80C65D1XKSA1 |
191 | 6.71 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | Automotive, AEC-Q100/101, CoolSiC™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 73 ns | 40 µA @ 650 V | 650 V | 74A (DC) | -40°C ~ 175°C | 1.7 V @ 40 A | ||
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PX1500GST Rect, 400V, 15A |
1000 | 1.19 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 1.5 µs | 10 µA @ 400 V | 400 V | 15A | -50°C ~ 175°C | 1 V @ 15 A | |||
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SS32SCHOTTKY DIODE SMA 20V 3A |
80000 | 0.16 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | SMA | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 500pF @ 4V, 1MHz | - | 500 µA @ 20 V | 20 V | 3A | -55°C ~ 125°C | - | ||
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1SS5004WSDIODE SOD-323 400V 0.22A 100NS |
3559 | 0.08 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 100 ns | 100 nA @ 240 V | 400 V | 225mA | -55°C ~ 150°C | 1.25 V @ 200 mA | |||
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PCDP1065G1_T0_00001TO-220AC, SIC |
1990 | 3.02 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 364pF @ 1V, 1MHz | 0 ns | 70 µA @ 650 V | 650 V | 10A (DC) | -55°C ~ 175°C | 1.7 V @ 10 A | |||
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NXPSC126506QSILICON CARBIDE POWER DIODE |
2984 | 6.73 |
ДобавитьНемедленный |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 380pF @ 1V, 1MHz | 0 ns | 80 µA @ 650 V | 650 V | 12A | 175°C (Max) | 1.7 V @ 12 A |