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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType
GBJ808-F

GBJ808-F

BRIDGE RECT 1PHASE 800V 8A GBJ

Diodes Incorporated

2523 1.75
- +

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Немедленный

GBJ808-F

Datenblatt

Tube - Active Single Phase Standard 800 V 8 A 1 V @ 4 A 5 µA @ 800 V -65°C ~ 150°C (TJ) Through Hole
GBJ2502-F

GBJ2502-F

BRIDGE RECT 1PHASE 200V 25A GBJ

Diodes Incorporated

3735 2.04
- +

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Немедленный

GBJ2502-F

Datenblatt

Tube,Tube - Active Single Phase Standard 200 V 25 A 1.05 V @ 12.5 A 10 µA @ 200 V -65°C ~ 150°C (TJ) Through Hole
BU2006-M3/51

BU2006-M3/51

BRIDGE RECT 1P 600V 20A BU

Vishay General Semiconductor - Diodes Division

3291 1.81
- +

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Немедленный

BU2006-M3/51

Datenblatt

Tray - Active Single Phase Standard 600 V 20 A 1.05 V @ 10 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole
BU2008-M3/51

BU2008-M3/51

BRIDGE RECT 1P 800V 20A BU

Vishay General Semiconductor - Diodes Division

2885 1.81
- +

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Немедленный

BU2008-M3/51

Datenblatt

Tray - Active Single Phase Standard 800 V 20 A 1.05 V @ 10 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole
BU2010-M3/51

BU2010-M3/51

BRIDGE RECT 1P 1KV 20A BU

Vishay General Semiconductor - Diodes Division

2550 1.81
- +

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Немедленный

BU2010-M3/51

Datenblatt

Tray - Active Single Phase Standard 1 kV 20 A 1.05 V @ 10 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole
KBU603G

KBU603G

DIODE BRIDGE 6A 200V KBU

Taiwan Semiconductor Corporation

2097 1.81
- +

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Немедленный

Tray - Active Single Phase Standard 200 V 6 A 1.1 V @ 6 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole
GSIB1520N-M3/45

GSIB1520N-M3/45

BRIDGE RECT 1P 200V 15A GSIB-5S

Vishay General Semiconductor - Diodes Division

2836 1.84
- +

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Немедленный

GSIB1520N-M3/45

Datenblatt

Tube - Active Single Phase Standard 200 V 15 A 950 mV @ 7.5 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole
GSIB1540N-M3/45

GSIB1540N-M3/45

BRIDGE RECT 1P 400V 15A GSIB-5S

Vishay General Semiconductor - Diodes Division

3888 1.84
- +

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Немедленный

GSIB1540N-M3/45

Datenblatt

Tube - Active Single Phase Standard 400 V 15 A 950 mV @ 7.5 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole
GSIB1560N-M3/45

GSIB1560N-M3/45

BRIDGE RECT 1P 600V 15A GSIB-5S

Vishay General Semiconductor - Diodes Division

2930 1.84
- +

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Немедленный

GSIB1560N-M3/45

Datenblatt

Tube - Active Single Phase Standard 600 V 15 A 950 mV @ 7.5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole
GSIB2020N-M3/45

GSIB2020N-M3/45

BRIDGE RECT 1P 200V 20A GSIB-5S

Vishay General Semiconductor - Diodes Division

2989 1.84
- +

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Немедленный

GSIB2020N-M3/45

Datenblatt

Tube - Active Single Phase Standard 200 V 20 A 1 V @ 7.5 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole
GSIB2040N-M3/45

GSIB2040N-M3/45

BRIDGE RECT 1P 400V 20A GSIB-5S

Vishay General Semiconductor - Diodes Division

2152 1.84
- +

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Немедленный

GSIB2040N-M3/45

Datenblatt

Tube - Active Single Phase Standard 400 V 20 A 1 V @ 7.5 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole
GSIB2060N-M3/45

GSIB2060N-M3/45

BRIDGE RECT 1P 600V 20A GSIB-5S

Vishay General Semiconductor - Diodes Division

3793 1.84
- +

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Немедленный

GSIB2060N-M3/45

Datenblatt

Tube - Active Single Phase Standard 600 V 20 A 1 V @ 7.5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole
GSIB2080N-M3/45

GSIB2080N-M3/45

BRIDGE RECT 1P 800V 20A GSIB-5S

Vishay General Semiconductor - Diodes Division

2512 1.84
- +

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Немедленный

GSIB2080N-M3/45

Datenblatt

Tube - Active Single Phase Standard 800 V 20 A 1 V @ 7.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole
BU25H06-E3/A

BU25H06-E3/A

BRIDGE RECT 1P 600V 3.5A BU

Vishay General Semiconductor - Diodes Division

3178 1.84
- +

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Немедленный

BU25H06-E3/A

Datenblatt

Tray isoCink+™ Active Single Phase Standard 600 V 3.5 A 1.05 V @ 12.5 A 5 µA @ 600 V -55°C ~ 175°C (TJ) Through Hole
BU25H08-E3/A

BU25H08-E3/A

BRIDGE RECT 1P 600V 3.5A BU

Vishay General Semiconductor - Diodes Division

2356 1.84
- +

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Немедленный

BU25H08-E3/A

Datenblatt

Tray isoCink+™ Active Single Phase Standard 600 V 3.5 A 1.05 V @ 12.5 A 5 µA @ 600 V -55°C ~ 175°C (TJ) Through Hole
BU25H06-M3/A

BU25H06-M3/A

BRIDGE RECT 1P 600V 3.5A BU

Vishay General Semiconductor - Diodes Division

2247 1.84
- +

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Немедленный

BU25H06-M3/A

Datenblatt

Tray isoCink+™ Active Single Phase Standard 600 V 3.5 A 1.05 V @ 12.5 A 5 µA @ 600 V -55°C ~ 175°C (TJ) Through Hole
BU25H08-M3/A

BU25H08-M3/A

BRIDGE RECT 1P 800V 3.5A BU

Vishay General Semiconductor - Diodes Division

2165 1.84
- +

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Немедленный

BU25H08-M3/A

Datenblatt

Tray isoCink+™ Active Single Phase Standard 800 V 3.5 A 1.05 V @ 12.5 A 5 µA @ 800 V -55°C ~ 175°C (TJ) Through Hole
KBU604G

KBU604G

BRIDGE RECT 1PHASE 400V 6A KBU

Taiwan Semiconductor Corporation

2084 1.86
- +

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Немедленный

KBU604G

Datenblatt

Tray - Active Single Phase Standard 400 V 6 A 1.1 V @ 6 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole
KBU605G

KBU605G

BRIDGE RECT 1PHASE 600V 6A KBU

Taiwan Semiconductor Corporation

3927 1.86
- +

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Немедленный

KBU605G

Datenblatt

Tray - Active Single Phase Standard 600 V 6 A 1.1 V @ 6 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole
KBU606G

KBU606G

BRIDGE RECT 1PHASE 800V 6A KBU

Taiwan Semiconductor Corporation

3381 1.86
- +

Добавить

Немедленный

KBU606G

Datenblatt

Tray - Active Single Phase Standard 800 V 6 A 1.1 V @ 6 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole
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