Добро пожаловать Element Technology Co., Ltd.!

+86 15361839241 +86 0755-23603516
Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType
GBJ25005-BP

GBJ25005-BP

BRIDGE RECT 1PHASE 50V 25A GBJ

Micro Commercial Co

3124 1.88
- +

Добавить

Немедленный

GBJ25005-BP

Datenblatt

Tube - Active Single Phase Standard 50 V 25 A 1.05 V @ 12.5 A 10 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole
GBU2508-BP

GBU2508-BP

BRIDGE RECT 1PHASE 800V 25A GBU

Micro Commercial Co

3476 1.88
- +

Добавить

Немедленный

GBU2508-BP

Datenblatt

Bulk - Active Single Phase Standard 800 V 25 A 1.1 V @ 12.5 A 10 µA @ 800 V -55°C ~ 150°C Through Hole
KBU404G

KBU404G

BRIDGE RECT 1PHASE 400V 4A KBU

Taiwan Semiconductor Corporation

2008 1.90
- +

Добавить

Немедленный

KBU404G

Datenblatt

Tray - Active Single Phase Standard 400 V 4 A 1.1 V @ 4 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole
KBU405G

KBU405G

BRIDGE RECT 1PHASE 600V 4A KBU

Taiwan Semiconductor Corporation

3611 1.90
- +

Добавить

Немедленный

KBU405G

Datenblatt

Tray - Active Single Phase Standard 600 V 4 A 1.1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole
KBU406G

KBU406G

BRIDGE RECT 1PHASE 800V 4A KBU

Taiwan Semiconductor Corporation

2033 1.90
- +

Добавить

Немедленный

KBU406G

Datenblatt

Tray - Active Single Phase Standard 800 V 4 A 1.1 V @ 4 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole
KBU407G

KBU407G

BRIDGE RECT 1PHASE 1KV 4A KBU

Taiwan Semiconductor Corporation

3332 1.90
- +

Добавить

Немедленный

KBU407G

Datenblatt

Tray - Active Single Phase Standard 1 kV 4 A 1.1 V @ 4 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole
KBPC15010T

KBPC15010T

BRIDGE RECT 1P 1KV 15A KBPC-T

GeneSiC Semiconductor

2559 1.92
- +

Добавить

Немедленный

KBPC15010T

Datenblatt

Bulk - Active Single Phase Standard 1 kV 15 A 1.1 V @ 7.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) QC Terminal
TS50P05G

TS50P05G

BRIDGE RECT 1P 600V 50A TS-6P

Taiwan Semiconductor Corporation

2800 1.95
- +

Добавить

Немедленный

TS50P05G

Datenblatt

Tube - Active Single Phase Standard 600 V 50 A 1.1 V @ 25 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole
TS50P06G

TS50P06G

BRIDGE RECT 1P 800V 50A TS-6P

Taiwan Semiconductor Corporation

2323 1.95
- +

Добавить

Немедленный

TS50P06G

Datenblatt

Tube - Active Single Phase Standard 800 V 50 A 1.1 V @ 25 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole
BU2506-M3/51

BU2506-M3/51

BRIDGE RECT 1P 600V 3.5A BU

Vishay General Semiconductor - Diodes Division

3215 1.95
- +

Добавить

Немедленный

BU2506-M3/51

Datenblatt

Tray - Active Single Phase Standard 600 V 3.5 A 1.05 V @ 12.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole
BU2508-M3/51

BU2508-M3/51

BRIDGE RECT 1P 800V 3.5A BU

Vishay General Semiconductor - Diodes Division

3105 1.95
- +

Добавить

Немедленный

BU2508-M3/51

Datenblatt

Tray - Active Single Phase Standard 800 V 3.5 A 1.05 V @ 12.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole
BU2510-M3/51

BU2510-M3/51

BRIDGE RECT 1P 1KV 3.5A BU

Vishay General Semiconductor - Diodes Division

3881 1.95
- +

Добавить

Немедленный

BU2510-M3/51

Datenblatt

Tray - Active Single Phase Standard 1 kV 3.5 A 1.05 V @ 12.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole
GBJ1010-F

GBJ1010-F

BRIDGE RECT 1PHASE 1KV 10A GBJ

Diodes Incorporated

3734 1.95
- +

Добавить

Немедленный

GBJ1010-F

Datenblatt

Tube - Active Single Phase Standard 1 kV 10 A 1.05 V @ 5 A 10 µA @ 1000 V -65°C ~ 150°C (TJ) Through Hole
BU2006-M3/45

BU2006-M3/45

BRIDGE RECT 1P 600V 20A BU

Vishay General Semiconductor - Diodes Division

2091 2.00
- +

Добавить

Немедленный

BU2006-M3/45

Datenblatt

Bulk - Active Single Phase Standard 600 V 20 A 1.05 V @ 10 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole
BU2008-M3/45

BU2008-M3/45

BRIDGE RECT 1P 800V 20A BU

Vishay General Semiconductor - Diodes Division

2812 2.00
- +

Добавить

Немедленный

BU2008-M3/45

Datenblatt

Tube - Active Single Phase Standard 800 V 20 A 1.05 V @ 10 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole
KBU804G

KBU804G

BRIDGE RECT 1PHASE 400V 8A KBU

Taiwan Semiconductor Corporation

3788 2.01
- +

Добавить

Немедленный

KBU804G

Datenblatt

Tray - Active Single Phase Standard 400 V 8 A 1.1 V @ 8 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole
KBU805G

KBU805G

BRIDGE RECT 1PHASE 600V 8A KBU

Taiwan Semiconductor Corporation

2503 2.01
- +

Добавить

Немедленный

KBU805G

Datenblatt

Tray - Active Single Phase Standard 600 V 8 A 1.1 V @ 8 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole
KBU806G

KBU806G

BRIDGE RECT 1PHASE 800V 8A KBU

Taiwan Semiconductor Corporation

3151 2.01
- +

Добавить

Немедленный

KBU806G

Datenblatt

Tray - Active Single Phase Standard 800 V 8 A 1.1 V @ 8 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole
KBU1003G

KBU1003G

DIODE BRIDGE 10A 200V KBU

Taiwan Semiconductor Corporation

2246 2.01
- +

Добавить

Немедленный

Tray - Active Single Phase Standard 200 V 10 A 1.1 V @ 10 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole
GBPC15010T

GBPC15010T

BRIDGE RECT 1P 1KV 15A GBPC-T

GeneSiC Semiconductor

3778 2.03
- +

Добавить

Немедленный

Bulk - Active Single Phase Standard 1 kV 15 A 1.1 V @ 7.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) QC Terminal
Total 8096 Records«Prev1... 164165166167168169170171...405Next»
Запрос котировок
Номер запчасти
А
Связь
Электронная почта
Замечания
  • Домой

    Домой

    Продукты

    Продукты

    Телефон

    Телефон

    Пользователи

    Пользователи