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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType
DFB2005

DFB2005

BRIDGE RECT 1PHASE 50V 20A TS6P

onsemi

3881 1.00
- +

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DFB2005

Datenblatt

Bulk,Tube,Tube - Active Single Phase Standard 50 V 20 A 1.1 V @ 20 A 10 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole
DFB2020

DFB2020

BRIDGE RECT 1PHASE 200V 20A TS6P

onsemi

2573 1.32
- +

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DFB2020

Datenblatt

Bulk,Tube,Tube - Active Single Phase Standard 200 V 20 A 1.1 V @ 20 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole
GBU10005

GBU10005

BRIDGE RECT 1PHASE 50V 10A GBU

Diodes Incorporated

3412 1.43
- +

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Немедленный

GBU10005

Datenblatt

Tube - Active Single Phase Standard 50 V 10 A 1 V @ 5 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole
GBU1008

GBU1008

BRIDGE RECT 1PHASE 800V 10A GBU

Diodes Incorporated

3416 1.43
- +

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Немедленный

GBU1008

Datenblatt

Tube - Active Single Phase Standard 800 V 10 A 1 V @ 5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole
TS35P06G

TS35P06G

BRIDGE RECT 1P 800V 35A TS-6P

Taiwan Semiconductor Corporation

2847 1.46
- +

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TS35P06G

Datenblatt

Tube - Active Single Phase Standard 800 V 35 A 1.1 V @ 17.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole
TS40P05G

TS40P05G

BRIDGE RECT 1P 600V 40A TS-6P

Taiwan Semiconductor Corporation

3988 1.46
- +

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TS40P05G

Datenblatt

Tube - Active Single Phase Standard 600 V 40 A 1.1 V @ 20 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole
TS40P06G

TS40P06G

BRIDGE RECT 1P 800V 40A TS-6P

Taiwan Semiconductor Corporation

3396 1.46
- +

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TS40P06G

Datenblatt

Tube - Active Single Phase Standard 800 V 40 A 1.1 V @ 20 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole
BU1506-M3/51

BU1506-M3/51

BRIDGE RECT 1P 600V 15A BU

Vishay General Semiconductor - Diodes Division

3018 1.47
- +

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Немедленный

BU1506-M3/51

Datenblatt

Tray - Active Single Phase Standard 600 V 15 A 1.05 V @ 7.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole
BU1508-M3/51

BU1508-M3/51

BRIDGE RECT 1P 800V 15A BU

Vishay General Semiconductor - Diodes Division

2900 1.47
- +

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Немедленный

BU1508-M3/51

Datenblatt

Tray - Active Single Phase Standard 800 V 15 A 1.05 V @ 7.5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole
BU1510-M3/51

BU1510-M3/51

BRIDGE RECT 1P 1KV 15A BU

Vishay General Semiconductor - Diodes Division

3448 1.47
- +

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Немедленный

BU1510-M3/51

Datenblatt

Tray - Active Single Phase Standard 1 kV 15 A 1.05 V @ 7.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole
GBU801-G

GBU801-G

BRIDGE RECT 1PHASE 100V 8A GBU

Comchip Technology

2537 1.48
- +

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Немедленный

GBU801-G

Datenblatt

Bulk - Active Single Phase Standard 100 V 8 A 1 V @ 4 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole
GBJ801-F

GBJ801-F

BRIDGE RECT 1PHASE 100V 8A GBJ

Diodes Incorporated

156 1.72
- +

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Немедленный

GBJ801-F

Datenblatt

Tube,Tube - Active Single Phase Standard 100 V 8 A 1 V @ 4 A 5 µA @ 100 V -65°C ~ 150°C (TJ) Through Hole
GBJ8005-F

GBJ8005-F

BRIDGE RECT 1PHASE 50V 8A GBJ

Diodes Incorporated

3307 1.72
- +

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Немедленный

GBJ8005-F

Datenblatt

Tube,Tube - Active Single Phase Standard 50 V 8 A 1 V @ 4 A 5 µA @ 50 V -65°C ~ 150°C (TJ) Through Hole
GBU8005

GBU8005

BRIDGE RECT 1PHASE 50V 8A GBU

Diodes Incorporated

2597 1.74
- +

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Немедленный

GBU8005

Datenblatt

Tube,Tube - Active Single Phase Standard 50 V 8 A 1 V @ 4 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole
BU1006-M3/45

BU1006-M3/45

BRIDGE RECT 1P 600V 10A BU

Vishay General Semiconductor - Diodes Division

2343 1.54
- +

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Немедленный

BU1006-M3/45

Datenblatt

Tube - Active Single Phase Standard 600 V 10 A 1.05 V @ 5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole
BU1008-M3/45

BU1008-M3/45

BRIDGE RECT 1P 800V 10A BU

Vishay General Semiconductor - Diodes Division

2105 1.54
- +

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Немедленный

BU1008-M3/45

Datenblatt

Tube - Active Single Phase Standard 800 V 10 A 1.05 V @ 5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole
BU1010-M3/45

BU1010-M3/45

BRIDGE RECT 1P 1KV 10A BU

Vishay General Semiconductor - Diodes Division

3495 1.54
- +

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Немедленный

BU1010-M3/45

Datenblatt

Tube - Active Single Phase Standard 1 kV 10 A 1.05 V @ 5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole
GSIB620N-M3/45

GSIB620N-M3/45

BRIDGE RECT 1P 200V 6A GSIB-5S

Vishay General Semiconductor - Diodes Division

3161 1.54
- +

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Немедленный

GSIB620N-M3/45

Datenblatt

Tube - Active Single Phase Standard 200 V 6 A 950 mV @ 3 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole
GSIB640N-M3/45

GSIB640N-M3/45

BRIDGE RECT 1P 400V 6A GSIB-5S

Vishay General Semiconductor - Diodes Division

3318 1.54
- +

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Немедленный

GSIB640N-M3/45

Datenblatt

Tube - Active Single Phase Standard 400 V 6 A 950 mV @ 3 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole
GSIB660N-M3/45

GSIB660N-M3/45

BRIDGE RECT 1P 600V 6A GSIB-5S

Vishay General Semiconductor - Diodes Division

3107 1.54
- +

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Немедленный

GSIB660N-M3/45

Datenblatt

Tube - Active Single Phase Standard 600 V 6 A 950 mV @ 3 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole
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