Diodes - Bridge Rectifiers - Element(Гонконг) Technology Co., Ltd.

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Производитель. Часть #	Акции	Цены	А	Таблицы данных	Packaging	Series	ProductStatus	DiodeType	Technology	Voltage-PeakReverse(Max)	Current-AverageRectified(Io)	Voltage-Forward(Vf)(Max)@If	Current-ReverseLeakage@Vr	OperatingTemperature	MountingType
BR108-BP BRIDGE RECT 1PHASE 800V 10A PB-6 Micro Commercial Co	2823	0.88	- + Добавить Немедленный	Datenblatt	Bulk	-	Active	Single Phase	Standard	800 V	10 A	1.1 V @ 5 A	10 µA @ 800 V	-55°C ~ 150°C	Through Hole
GBJ20005 BRIDGE RECT 1PHASE 50V 20A GBJ SMC Diode Solutions	2764	0.88	- + Добавить Немедленный	Datenblatt	Tube	-	Active	Single Phase	Standard	50 V	20 A	1.1 V @ 20 A	5 µA @ 50 V	-55°C ~ 150°C (TJ)	Through Hole
GBJ2001 BRIDGE RECT 1PHASE 100V 20A GBJ SMC Diode Solutions	3354	0.88	- + Добавить Немедленный	Datenblatt	Tube	-	Active	Single Phase	Standard	100 V	20 A	1.1 V @ 20 A	5 µA @ 100 V	-55°C ~ 150°C (TJ)	Through Hole
GBJ2002 BRIDGE RECT 1PHASE 200V 20A GBJ SMC Diode Solutions	2477	0.88	- + Добавить Немедленный	Datenblatt	Tube	-	Active	Single Phase	Standard	200 V	20 A	1.1 V @ 20 A	5 µA @ 200 V	-55°C ~ 150°C (TJ)	Through Hole
GBJ2004 BRIDGE RECT 1PHASE 400V 20A GBJ SMC Diode Solutions	2324	0.88	- + Добавить Немедленный	Datenblatt	Tube	-	Active	Single Phase	Standard	400 V	20 A	1.1 V @ 20 A	5 µA @ 400 V	-55°C ~ 150°C (TJ)	Through Hole
GBJ2008 BRIDGE RECT 1PHASE 800V 20A GBJ SMC Diode Solutions	2188	0.88	- + Добавить Немедленный	Datenblatt	Tube	-	Active	Single Phase	Standard	800 V	20 A	1.1 V @ 20 A	10 µA @ 800 V	-55°C ~ 150°C (TJ)	Through Hole
GBL04-M3/45 4A 400V GPP INLINE BRIDGE Vishay General Semiconductor - Diodes Division	3967	0.88	- + Добавить Немедленный	Datenblatt	Tube	-	Active	Single Phase	Standard	400 V	3 A	1 V @ 4 A	5 µA @ 400 V	-55°C ~ 150°C (TJ)	Through Hole
GBL01-M3/51 BRIDGE RECT 1PHASE 100V 4A GBL Vishay General Semiconductor - Diodes Division	3270	0.88	- + Добавить Немедленный	Datenblatt	Tray	-	Active	Single Phase	Standard	100 V	4 A	1.1 V @ 4 A	5 µA @ 100 V	-55°C ~ 150°C (TJ)	Through Hole
GBL02-M3/51 BRIDGE RECT 1PHASE 200V 4A GBL Vishay General Semiconductor - Diodes Division	2452	0.88	- + Добавить Немедленный	Datenblatt	Tray	-	Active	Single Phase	Standard	200 V	4 A	1.1 V @ 4 A	5 µA @ 200 V	-55°C ~ 150°C (TJ)	Through Hole
GBL04-M3/51 BRIDGE RECT 1PHASE 400V 4A GBL Vishay General Semiconductor - Diodes Division	2449	0.88	- + Добавить Немедленный	Datenblatt	Tray	-	Active	Single Phase	Standard	400 V	4 A	1.1 V @ 4 A	5 µA @ 400 V	-55°C ~ 150°C (TJ)	Through Hole
GBL06-M3/51 BRIDGE RECT 1PHASE 600V 4A GBL Vishay General Semiconductor - Diodes Division	2891	0.88	- + Добавить Немедленный	Datenblatt	Tray	-	Active	Single Phase	Standard	600 V	4 A	1.1 V @ 4 A	5 µA @ 600 V	-55°C ~ 150°C (TJ)	Through Hole
GBL08-M3/51 BRIDGE RECT 1PHASE 800V 4A GBL Vishay General Semiconductor - Diodes Division	3105	0.88	- + Добавить Немедленный	Datenblatt	Tray	-	Active	Single Phase	Standard	800 V	4 A	1 V @ 2 A	10 µA @ 800 V	-55°C ~ 150°C (TJ)	Through Hole
GBL10-M3/51 BRIDGE RECT 1PHASE 1KV 4A GBL Vishay General Semiconductor - Diodes Division	2851	0.88	- + Добавить Немедленный	Datenblatt	Tray	-	Active	Single Phase	Standard	1 kV	4 A	1.1 V @ 4 A	5 µA @ 1000 V	-55°C ~ 150°C (TJ)	Through Hole
GBL01-M3/45 BRIDGE RECT 1PHASE 100V 4A GBL Vishay General Semiconductor - Diodes Division	2943	0.88	- + Добавить Немедленный	Datenblatt	Tube	-	Active	Single Phase	Standard	100 V	4 A	1.1 V @ 4 A	5 µA @ 100 V	-55°C ~ 150°C (TJ)	Through Hole
GBL02-M3/45 BRIDGE RECT 1PHASE 200V 4A GBL Vishay General Semiconductor - Diodes Division	2162	0.88	- + Добавить Немедленный	Datenblatt	Tube	-	Active	Single Phase	Standard	200 V	4 A	1.1 V @ 4 A	5 µA @ 200 V	-55°C ~ 150°C (TJ)	Through Hole
GBL06-M3/45 BRIDGE RECT 1PHASE 600V 4A GBL Vishay General Semiconductor - Diodes Division	3980	0.88	- + Добавить Немедленный	Datenblatt	Tube	-	Active	Single Phase	Standard	600 V	4 A	1.1 V @ 4 A	5 µA @ 600 V	-55°C ~ 150°C (TJ)	Through Hole
GBL08-M3/45 BRIDGE RECT 1PHASE 800V 4A GBL Vishay General Semiconductor - Diodes Division	3414	0.88	- + Добавить Немедленный	Datenblatt	Tube	-	Active	Single Phase	Standard	800 V	4 A	1 V @ 2 A	10 µA @ 800 V	-55°C ~ 150°C (TJ)	Through Hole
GBL10-M3/45 BRIDGE RECT 1PHASE 1KV 4A GBL Vishay General Semiconductor - Diodes Division	3132	0.88	- + Добавить Немедленный	Datenblatt	Tube	-	Active	Single Phase	Standard	1 kV	4 A	1.1 V @ 4 A	5 µA @ 1000 V	-55°C ~ 150°C (TJ)	Through Hole
BR805 BRIDGE RECT 1PHASE 50V 8A BR-8 GeneSiC Semiconductor	3417	0.89	- + Добавить Немедленный	Datenblatt	Bulk	-	Active	Single Phase	Standard	50 V	8 A	1.1 V @ 4 A	10 µA @ 50 V	-65°C ~ 125°C (TJ)	Through Hole
BR810 BRIDGE RECT 1PHASE 1KV 8A BR-8 GeneSiC Semiconductor	3691	0.89	- + Добавить Немедленный	Datenblatt	Bulk	-	Active	Single Phase	Standard	1 kV	8 A	1.1 V @ 4 A	10 µA @ 1000 V	-65°C ~ 125°C (TJ)	Through Hole