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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType
GBJ2506-HF

GBJ2506-HF

RECTIFIER BRIDGE 25A 600V GBJ

Comchip Technology

2696 0.95
- +

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Немедленный

GBJ2506-HF

Datenblatt

Tube - Active Single Phase Standard 600 V 3.5 A 1 V @ 12.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole
UR8KB60

UR8KB60

BRIDGE RECT 1PHASE 600V 8A D3K

Taiwan Semiconductor Corporation

2692 0.95
- +

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Немедленный

UR8KB60

Datenblatt

Tube - Active Single Phase Standard 600 V 8 A 1.1 V @ 8 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole
UR8KB80

UR8KB80

BRIDGE RECT 1PHASE 800V 8A D3K

Taiwan Semiconductor Corporation

3372 0.95
- +

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Немедленный

UR8KB80

Datenblatt

Tube - Active Single Phase Standard 800 V 8 A 1.2 V @ 8 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole
BR1005

BR1005

BRIDGE RECT 1PHASE 50V 10A BR-10

GeneSiC Semiconductor

2785 0.96
- +

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Немедленный

BR1005

Datenblatt

Bulk - Active Single Phase Standard 50 V 10 A 1.1 V @ 5 A 10 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole
BR101

BR101

BRIDGE RECT 1P 100V 10A BR-10

GeneSiC Semiconductor

3808 0.96
- +

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Немедленный

BR101

Datenblatt

Bulk - Active Single Phase Standard 100 V 10 A 1.1 V @ 5 A 10 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole
BR1010

BR1010

BRIDGE RECT 1PHASE 1KV 10A BR-10

GeneSiC Semiconductor

2684 0.96
- +

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Немедленный

BR1010

Datenblatt

Bulk - Active Single Phase Standard 1 kV 10 A 1.1 V @ 5 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole
BR102

BR102

BRIDGE RECT 1P 200V 10A BR-10

GeneSiC Semiconductor

3996 0.96
- +

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Немедленный

BR102

Datenblatt

Bulk - Active Single Phase Standard 200 V 10 A 1.1 V @ 5 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole
BR104

BR104

BRIDGE RECT 1P 400V 10A BR-10

GeneSiC Semiconductor

3928 0.96
- +

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Немедленный

BR104

Datenblatt

Bulk - Active Single Phase Standard 400 V 10 A 1.1 V @ 5 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole
BR106

BR106

BRIDGE RECT 1P 600V 10A BR-10

GeneSiC Semiconductor

3653 0.96
- +

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Немедленный

BR106

Datenblatt

Bulk - Active Single Phase Standard 600 V 10 A 1.1 V @ 5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole
KBJ408G

KBJ408G

BRIDGE RECT 1PHASE 800V 4A KBJ

Diodes Incorporated

2480 0.94
- +

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Немедленный

KBJ408G

Datenblatt

Tube - Active Single Phase Standard 800 V 4 A 1 V @ 2 A 5 µA @ 800 V -65°C ~ 150°C (TJ) Through Hole
GBU6A-BP

GBU6A-BP

BRIDGE RECT 1PHASE 50V 6A GBU

Micro Commercial Co

3440 0.97
- +

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Немедленный

GBU6A-BP

Datenblatt

Tube - Active Single Phase Standard 50 V 6 A 1 V @ 3 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole
VS-2KBB05

VS-2KBB05

RECTIFIER BRIDGE 50V 1.9A D-37

Vishay General Semiconductor - Diodes Division

3762 0.98
- +

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Немедленный

Tube * Active - - - - - - - -
BR10005SG-G

BR10005SG-G

BRIDGE RECT 1PHASE 50V 10A BR-8

Comchip Technology

2490 0.99
- +

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Немедленный

BR10005SG-G

Datenblatt

Bulk - Active Single Phase Standard 50 V 10 A 1.1 V @ 5 A 10 µA @ 50 V -55°C ~ 150°C (TJ) Chassis Mount
BR1002SG-G

BR1002SG-G

BRIDGE RECT 1PHASE 200V 10A BR-8

Comchip Technology

3162 0.99
- +

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Немедленный

BR1002SG-G

Datenblatt

Bulk - Active Single Phase Standard 200 V 10 A 1.1 V @ 5 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Chassis Mount
BR1008SG-G

BR1008SG-G

BRIDGE RECT 1PHASE 800V 10A BR-8

Comchip Technology

2339 0.99
- +

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Немедленный

BR1008SG-G

Datenblatt

Bulk - Active Single Phase Standard 800 V 10 A 1.1 V @ 5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Chassis Mount
KBJ410G

KBJ410G

BRIDGE RECT 1PHASE 1KV 4A KBJ

Diodes Incorporated

2212 0.98
- +

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Немедленный

KBJ410G

Datenblatt

Tube - Active Single Phase Standard 1 kV 4 A 1 V @ 2 A 5 µA @ 1000 V -65°C ~ 150°C (TJ) Through Hole
VS-2KBB80

VS-2KBB80

RECTIFIER BRIDGE 800V 1.9A D-37

Vishay General Semiconductor - Diodes Division

2043 1.01
- +

Добавить

Немедленный

Tube * Active - - - - - - - -
DF1506S

DF1506S

BRIDGE RECT 1P 600V 1.5A DF-S

Diodes Incorporated

3579 0.99
- +

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Немедленный

DF1506S

Datenblatt

Bulk - Active Single Phase Standard 600 V 1.5 A 1.1 V @ 1.5 A 10 µA @ 600 V -65°C ~ 150°C (TJ) Surface Mount
TS10P06G

TS10P06G

BRIDGE RECT 1P 800V 10A TS-6P

Taiwan Semiconductor Corporation

3765 1.01
- +

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Немедленный

TS10P06G

Datenblatt

Tube - Active Single Phase Standard 800 V 10 A 1.1 V @ 10 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole
TS10P07G

TS10P07G

BRIDGE RECT 1PHASE 1KV 10A TS-6P

Taiwan Semiconductor Corporation

2088 1.01
- +

Добавить

Немедленный

TS10P07G

Datenblatt

Tube - Active Single Phase Standard 1 kV 10 A 1.1 V @ 10 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole
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