Diodes - Bridge Rectifiers - Element(Гонконг) Technology Co., Ltd.

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Производитель. Часть #	Акции	Цены	А	Таблицы данных	Packaging	Series	ProductStatus	DiodeType	Technology	Voltage-PeakReverse(Max)	Current-AverageRectified(Io)	Voltage-Forward(Vf)(Max)@If	Current-ReverseLeakage@Vr	OperatingTemperature	MountingType
TT6JL MEDIUM/HIGH POWER BRIDGE TTL T&R Diodes Incorporated	2856	0.80	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)	-	Active	Single Phase	Standard	600 V	6 A	0.9 V @ 3 A	5 µA @ 600 V	-55°C ~ 150°C (TJ)	Surface Mount
GBLA06-M3/51 BRIDGE RECT 1PHASE 600V 4A GBL Vishay General Semiconductor - Diodes Division	3146	0.82	- + Добавить Немедленный	Datenblatt	Tray	-	Active	Single Phase	Standard	600 V	4 A	1 V @ 4 A	5 µA @ 600 V	-55°C ~ 150°C (TJ)	Through Hole
GBLA08-M3/51 BRIDGE RECT 1PHASE 800V 4A GBL Vishay General Semiconductor - Diodes Division	3160	0.82	- + Добавить Немедленный	Datenblatt	Tray	-	Active	Single Phase	Standard	800 V	4 A	1 V @ 4 A	5 µA @ 800 V	-55°C ~ 150°C (TJ)	Through Hole
GBLA10-M3/51 BRIDGE RECT 1PHASE 1KV 4A GBL Vishay General Semiconductor - Diodes Division	2364	0.82	- + Добавить Немедленный	Datenblatt	Tray	-	Active	Single Phase	Standard	1 kV	4 A	1 V @ 4 A	5 µA @ 1000 V	-55°C ~ 150°C (TJ)	Through Hole
GBLA06-M3/45 BRIDGE RECT 1PHASE 600V 4A GBL Vishay General Semiconductor - Diodes Division	2340	0.82	- + Добавить Немедленный	Datenblatt	Tube	-	Active	Single Phase	Standard	600 V	4 A	1 V @ 4 A	5 µA @ 600 V	-55°C ~ 150°C (TJ)	Through Hole
GBLA08-M3/45 BRIDGE RECT 1PHASE 800V 4A GBL Vishay General Semiconductor - Diodes Division	2606	0.82	- + Добавить Немедленный	Datenblatt	Tube	-	Active	Single Phase	Standard	800 V	4 A	1 V @ 4 A	5 µA @ 800 V	-55°C ~ 150°C (TJ)	Through Hole
DF1502S BRIDGE RECT 1P 200V 1.5A DF-S Diodes Incorporated	2013	0.80	- + Добавить Немедленный	Datenblatt	Bulk	-	Active	Single Phase	Standard	200 V	1.5 A	1.1 V @ 1.5 A	10 µA @ 100 V	-65°C ~ 150°C (TJ)	Surface Mount
KBU10005 BRIDGE RECT 1PHASE 50V 10A KBU GeneSiC Semiconductor	2245	0.82	- + Добавить Немедленный	Datenblatt	Bulk	-	Active	Single Phase	Standard	50 V	10 A	1.05 V @ 10 A	10 µA @ 50 V	-55°C ~ 150°C (TJ)	Through Hole
KBU1001 BRIDGE RECT 1PHASE 100V 10A KBU GeneSiC Semiconductor	3188	0.82	- + Добавить Немедленный	Datenblatt	Bulk	-	Active	Single Phase	Standard	100 V	10 A	1.05 V @ 10 A	10 µA @ 100 V	-55°C ~ 150°C (TJ)	Through Hole
KBU1002 BRIDGE RECT 1PHASE 200V 10A KBU GeneSiC Semiconductor	3202	0.82	- + Добавить Немедленный	Datenblatt	Bulk	-	Active	Single Phase	Standard	200 V	10 A	1.05 V @ 10 A	10 µA @ 200 V	-55°C ~ 150°C (TJ)	Through Hole
KBU1004 BRIDGE RECT 1PHASE 400V 10A KBU GeneSiC Semiconductor	2449	0.82	- + Добавить Немедленный	Datenblatt	Bulk	-	Active	Single Phase	Standard	400 V	10 A	1.05 V @ 10 A	10 µA @ 400 V	-55°C ~ 150°C (TJ)	Through Hole
KBU1006 BRIDGE RECT 1PHASE 600V 10A KBU GeneSiC Semiconductor	2636	0.82	- + Добавить Немедленный	Datenblatt	Bulk	-	Active	Single Phase	Standard	600 V	10 A	1.05 V @ 10 A	10 µA @ 600 V	-55°C ~ 150°C (TJ)	Through Hole
KBU1008 BRIDGE RECT 1PHASE 800V 10A KBU GeneSiC Semiconductor	3833	0.82	- + Добавить Немедленный	Datenblatt	Bulk	-	Active	Single Phase	Standard	800 V	10 A	1.05 V @ 10 A	10 µA @ 800 V	-55°C ~ 150°C (TJ)	Through Hole
KBU1010 BRIDGE RECT 1PHASE 1KV 10A KBU GeneSiC Semiconductor	3260	0.82	- + Добавить Немедленный	Datenblatt	Bulk	-	Active	Single Phase	Standard	1 kV	10 A	1.05 V @ 10 A	10 µA @ 1000 V	-55°C ~ 150°C (TJ)	Through Hole
G3SBA20-M3/45 BRIDGE RECT 1PHASE 200V 2.3A GBU Vishay General Semiconductor - Diodes Division	2799	0.82	- + Добавить Немедленный	Datenblatt	Tube	-	Active	Single Phase	Standard	200 V	2.3 A	1 V @ 2 A	5 µA @ 200 V	-55°C ~ 150°C (TJ)	Through Hole
G3SBA20-M3/51 BRIDGE RECT 1PHASE 200V 2.3A GBU Vishay General Semiconductor - Diodes Division	2215	0.82	- + Добавить Немедленный	Datenblatt	Tray	-	Active	Single Phase	Standard	200 V	2.3 A	1 V @ 2 A	5 µA @ 200 V	-55°C ~ 150°C (TJ)	Through Hole
G3SBA80-M3/45 BRIDGE RECT 1PHASE 800V 2.3A GBU Vishay General Semiconductor - Diodes Division	2680	0.82	- + Добавить Немедленный	Datenblatt	Tube	-	Active	Single Phase	Standard	800 V	2.3 A	1 V @ 2 A	5 µA @ 800 V	-55°C ~ 150°C (TJ)	Through Hole
G3SBA80-M3/51 BRIDGE RECT 1PHASE 800V 2.3A GBU Vishay General Semiconductor - Diodes Division	2752	0.82	- + Добавить Немедленный	Datenblatt	Tray	-	Active	Single Phase	Standard	800 V	2.3 A	1 V @ 2 A	5 µA @ 800 V	-55°C ~ 150°C (TJ)	Through Hole
KBJ401G BRIDGE RECT 1PHASE 100V 4A KBJ Diodes Incorporated	3721	0.81	- + Добавить Немедленный	Datenblatt	Tube	-	Active	Single Phase	Standard	100 V	4 A	1 V @ 2 A	5 µA @ 100 V	-65°C ~ 150°C (TJ)	Through Hole
GBJ15005 BRIDGE RECT 1PHASE 50V 15A GBJ SMC Diode Solutions	2351	0.83	- + Добавить Немедленный	Datenblatt	Tube	-	Active	Single Phase	Standard	50 V	15 A	1.1 V @ 7.5 A	10 µA @ 50 V	-55°C ~ 150°C (TJ)	Through Hole