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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType
GBU15K

GBU15K

BRIDGE RECT 1PHASE 800V 15A GBU

GeneSiC Semiconductor

3494 0.61
- +

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Немедленный

GBU15K

Datenblatt

Bulk - Active Single Phase Standard 800 V 15 A 1.1 V @ 15 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole
GBU15M

GBU15M

BRIDGE RECT 1PHASE 1KV 15A GBU

GeneSiC Semiconductor

3228 0.61
- +

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Немедленный

GBU15M

Datenblatt

Bulk - Active Single Phase Standard 1 kV 15 A 1.1 V @ 15 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole
GBJ1501-BP

GBJ1501-BP

BRIDGE RECT 1PHASE 100V 15A GBJ

Micro Commercial Co

3660 0.61
- +

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Немедленный

GBJ1501-BP

Datenblatt

Tube - Active Single Phase Standard 100 V 15 A 1.05 V @ 7.5 A 10 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole
CBR1-L080M

CBR1-L080M

BRIDGE RECT 1PHASE 800V 1.5A B-M

Central Semiconductor Corp

2615 0.62
- +

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Немедленный

CBR1-L080M

Datenblatt

Bulk - Active Single Phase Standard 800 V 1.5 A 1 V @ 1 A 10 µA @ 800 V -65°C ~ 150°C (TJ) Through Hole
DF08M

DF08M

BRIDGE RECT 1P 800V 1.5A 4DIP

onsemi

2330 0.62
- +

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Немедленный

DF08M

Datenblatt

Tube - Obsolete Single Phase Standard 800 V 1.5 A 1.1 V @ 1 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole
UR4KB100-B

UR4KB100-B

BRIDGE RECT 1PHASE 1KV 4A D3K

Taiwan Semiconductor Corporation

2093 0.64
- +

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Немедленный

UR4KB100-B

Datenblatt

Tube - Active Single Phase Standard 1 kV 4 A 1 V @ 4 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole
UR4KB60-B

UR4KB60-B

BRIDGE RECT 1PHASE 600V 4A D3K

Taiwan Semiconductor Corporation

2622 0.64
- +

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Немедленный

UR4KB60-B

Datenblatt

Tube - Active Single Phase Standard 600 V 4 A 1 V @ 2 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole
CBR2-L100M

CBR2-L100M

BRIDGE RECT 1PHASE 1KV 2A B-M

Central Semiconductor Corp

2831 0.64
- +

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Немедленный

CBR2-L100M

Datenblatt

Bulk - Active Single Phase Standard 1 kV 2 A 1.1 V @ 2 A 10 µA @ 1000 V -65°C ~ 150°C (TJ) Through Hole
GBU405H

GBU405H

BRIDGE RECT 1PHASE 600V 4A GBU

Taiwan Semiconductor Corporation

2290 0.65
- +

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Немедленный

GBU405H

Datenblatt

Tube Automotive, AEC-Q101 Active Single Phase Standard 600 V 4 A 1.1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole
GBU407H

GBU407H

BRIDGE RECT 1PHASE 1KV 4A GBU

Taiwan Semiconductor Corporation

2957 0.65
- +

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Немедленный

GBU407H

Datenblatt

Tube Automotive, AEC-Q101 Active Single Phase Standard 1 kV 4 A 1.1 V @ 4 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole
GBJA25005-BP

GBJA25005-BP

DIODE BRIDGE 25A JA

Micro Commercial Co

3915 0.66
- +

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Немедленный

GBJA25005-BP

Datenblatt

Bulk - Active Single Phase Standard 50 V 25 A 1.05 V @ 12.5 A 10 µA @ 50 V -55°C ~ 150°C Through Hole
GBJA2501-BP

GBJA2501-BP

DIODE BRIDGE 25A JA

Micro Commercial Co

2702 0.66
- +

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Немедленный

GBJA2501-BP

Datenblatt

Bulk - Active Single Phase Standard 100 V 25 A 1.05 V @ 12.5 A 10 µA @ 100 V -55°C ~ 150°C Through Hole
GBJA2502-BP

GBJA2502-BP

DIODE BRIDGE 25A JA

Micro Commercial Co

3766 0.66
- +

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Немедленный

GBJA2502-BP

Datenblatt

Bulk - Active Single Phase Standard 200 V 25 A 1.05 V @ 12.5 A 10 µA @ 200 V -55°C ~ 150°C Through Hole
GBJA2504-BP

GBJA2504-BP

DIODE BRIDGE 25A JA

Micro Commercial Co

2725 0.66
- +

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Немедленный

GBJA2504-BP

Datenblatt

Bulk - Active Single Phase Standard 400 V 25 A 1.05 V @ 12.5 A 10 µA @ 400 V -55°C ~ 150°C Through Hole
GBJA2506-BP

GBJA2506-BP

DIODE BRIDGE 25A JA

Micro Commercial Co

2324 0.66
- +

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Немедленный

GBJA2506-BP

Datenblatt

Bulk - Active Single Phase Standard 600 V 25 A 1.05 V @ 12.5 A 10 µA @ 600 V -55°C ~ 150°C Through Hole
GBJA2508-BP

GBJA2508-BP

DIODE BRIDGE 25A JA

Micro Commercial Co

3448 0.66
- +

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Немедленный

GBJA2508-BP

Datenblatt

Bulk - Active Single Phase Standard 800 V 25 A 1.05 V @ 12.5 A 10 µA @ 800 V -55°C ~ 150°C Through Hole
GBJA2510-BP

GBJA2510-BP

DIODE BRIDGE 25A JA

Micro Commercial Co

2269 0.66
- +

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Немедленный

GBJA2510-BP

Datenblatt

Bulk - Active Single Phase Standard 1 kV 25 A 1.05 V @ 12.5 A 10 µA @ 1000 V -55°C ~ 150°C Through Hole
GBLA005-E3/51

GBLA005-E3/51

BRIDGE RECT 1PHASE 50V 3A GBL

Vishay General Semiconductor - Diodes Division

3000 0.66
- +

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Немедленный

GBLA005-E3/51

Datenblatt

Bulk - Active Single Phase Standard 50 V 3 A 1.1 V @ 4 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole
GBLA01-E3/51

GBLA01-E3/51

BRIDGE RECT 1PHASE 100V 3A GBL

Vishay General Semiconductor - Diodes Division

2194 0.66
- +

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Немедленный

GBLA01-E3/51

Datenblatt

Bulk - Active Single Phase Standard 100 V 3 A 1.1 V @ 4 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole
GBLA02-E3/51

GBLA02-E3/51

BRIDGE RECT 1PHASE 200V 3A GBL

Vishay General Semiconductor - Diodes Division

3967 0.66
- +

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Немедленный

GBLA02-E3/51

Datenblatt

Bulk - Active Single Phase Avalanche 200 V 3 A 1.1 V @ 4 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole
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