| Фотографии | Производитель. Часть # | Акции | Цены | А | Таблицы данных | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|   | 2SJ687-ZK-E2-AYSMALL SIGNAL N-CHANNEL MOSFET | 2500 | 1.36 | ДобавитьНемедленный |   Datenblatt | Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 
|   | HUF75637S3STMOSFET N-CH 100V 44A D2PAK | 1429 | 1.36 | ДобавитьНемедленный |   Datenblatt | Bulk | UltraFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 44A (Tc) | 10V | 30mOhm @ 44A, 10V | 4V @ 250µA | 108 nC @ 20 V | ±20V | 1700 pF @ 25 V | - | 155W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 
|   | IXTP2N65X2MOSFET N-CH 650V 2A TO220 | 298 | 2.80 | ДобавитьНемедленный |   Datenblatt | Tube | Ultra X2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 2A (Tc) | 10V | 2.3Ohm @ 1A, 10V | 5V @ 250µA | 4.3 nC @ 10 V | ±30V | 180 pF @ 25 V | - | 55W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
|   | IRF731N-CHANNEL POWER MOSFET | 4369 | 1.37 | ДобавитьНемедленный |   Datenblatt | Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 350 V | 5.5A (Tc) | 10V | 1Ohm @ 3A, 10V | 4V @ 250µA | 35 nC @ 10 V | ±20V | 600 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
|   | IRFP340MOSFET N-CH 400V 11A TO247-3 | 1224 | 1.37 | ДобавитьНемедленный |   Datenblatt | Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 11A (Tc) | 10V | 550mOhm @ 6.6A, 10V | 4V @ 250µA | 62 nC @ 10 V | ±20V | 1400 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
|   | IPI60R280C6MOSFET N-CH 600V 13.8A TO262-3 | 1083 | 1.37 | ДобавитьНемедленный |   Datenblatt | Bulk | CoolMOS™ C6 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 13.8A (Tc) | - | 280mOhm @ 6.5A, 10V | 3.5V @ 430µA | 43 nC @ 10 V | ±20V | 950 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
|   | SIHP12N60E-BE3MOSFET N-CH 600V 12A TO220AB | 994 | 2.82 | ДобавитьНемедленный |   Datenblatt | Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | - | 380mOhm @ 6A, 10V | 4V @ 250µA | 58 nC @ 10 V | ±30V | 937 pF @ 100 V | - | 147W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
|   | IPI072N10N3 GN-CHANNEL POWER MOSFET | 1000 | 1.37 | ДобавитьНемедленный |   Datenblatt | Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 
|   | HUF75344A3MOSFET N-CH 55V 75A TO3P | 616 | 1.37 | ДобавитьНемедленный |   Datenblatt | Tube | UltraFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 8mOhm @ 75A, 10V | 4V @ 250µA | 208 nC @ 20 V | ±20V | 4855 pF @ 25 V | - | 288.5W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
|   | IPP040N08NF2SAKMA1TRENCH 40<-<100V | 870 | 2.83 | ДобавитьНемедленный |   Datenblatt | Tube | StrongIRFET™ 2 | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 22A (Ta), 115A (Tc) | 6V, 10V | 4mOhm @ 80A, 10V | 3.8V @ 85µA | 81 nC @ 10 V | ±20V | 3800 pF @ 40 V | - | 3.8W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
|   | IXTP1N100PMOSFET N-CH 1000V 1A TO220AB | 590 | 2.84 | ДобавитьНемедленный |   Datenblatt | Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 1A (Tc) | 10V | 15Ohm @ 500mA, 10V | 4.5V @ 50µA | 15.5 nC @ 10 V | ±20V | 331 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
|   | FQA10N80CMOSFET N-CH 800V 10A TO3P | 7600 | 1.38 | ДобавитьНемедленный |   Datenblatt | Tube | QFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 10A (Tc) | 10V | 1.1Ohm @ 5A, 10V | 5V @ 250µA | 58 nC @ 10 V | ±30V | 2800 pF @ 25 V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
|   | IXTP08N100PMOSFET N-CH 1000V 800MA TO220AB | 287 | 2.84 | ДобавитьНемедленный |   Datenblatt | Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 800mA (Tc) | 10V | 20Ohm @ 500mA, 10V | 4V @ 50µA | 11.3 nC @ 10 V | ±20V | 240 pF @ 25 V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
|   | RF1S64018A, 200V, 0.180 OHM, N-CHANNEL | 3985 | 1.38 | ДобавитьНемедленный |   Datenblatt | Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 18A (Tc) | 10V | 180mOhm @ 10A, 10V | 4V @ 250µA | 64 nC @ 10 V | ±20V | 1275 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
|   | NTPF250N65S3HPOWER MOSFET, N-CHANNEL, SUPERFE | 1000 | 2.85 | ДобавитьНемедленный |   Datenblatt | Tube | SuperFET® III | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 13A (Tj) | 10V | 250mOhm @ 6.5A, 10V | 4V @ 1.1mA | 24 nC @ 10 V | ±30V | 1261 pF @ 400 V | - | 29W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
|   | R6006KNXC7G600V 6A TO-220FM, HIGH-SPEED SWI | 997 | 2.87 | ДобавитьНемедленный |   Datenblatt | Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 6A (Ta) | 10V | 830mOhm @ 3A, 10V | 5.5V @ 1mA | 12 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 40W (Tc) | 150°C (TJ) | Through Hole | 
|   | AUIRF3415AUTOMOTIVE HEXFET N CHANNEL | 564 | 1.39 | ДобавитьНемедленный |   Datenblatt | Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 43A (Tc) | 10V | 42mOhm @ 22A, 10V | 4V @ 250µA | 200 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
|   | 2SK3659-AZMOSFET N-CH 20V 65A TO220-3 | 1772 | 1.40 | ДобавитьНемедленный |   Datenblatt | Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 65A (Tc) | - | 5.7mOhm @ 40A, 10V | 2.5V @ 1mA | 32 nC @ 10 V | - | 1700 pF @ 10 V | - | - | - | Through Hole | 
|   | RFG40N10MOSFET N-CH 100V 40A TO247-3 | 1560 | 1.40 | ДобавитьНемедленный |   Datenblatt | Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 40A (Tc) | 10V | 40mOhm @ 40A, 10V | 4V @ 250µA | 300 nC @ 20 V | ±20V | - | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
|   | IRFZ40PBF-BE3MOSFET N-CH 60V 50A TO220AB | 766 | 2.91 | ДобавитьНемедленный |   Datenblatt | Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | - | 28mOhm @ 31A, 10V | 4V @ 250µA | 67 nC @ 10 V | ±20V | 1900 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |