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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
IXA4I1200UC-TUB

IXA4I1200UC-TUB

DISC IGBT XPT-GENX3 TO-252D

IXYS

3473 1.66
- +

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Немедленный

Tube XPT™ Active PT 1200 V 9 A - 2.1V @ 15V, 3A 45 W 400µJ (on), 300µJ (off) Standard 12 nC 70ns/250ns 600V, 3A, 330Ohm, 15V - - Surface Mount
IGA03N120H2XKSA1

IGA03N120H2XKSA1

IGBT 1200V 3A 29W TO220-3

Infineon Technologies

2554 1.00
- +

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Немедленный

IGA03N120H2XKSA1

Datenblatt

Bulk,Tube - Last Time Buy - 1200 V 3 A 9 A 2.8V @ 15V, 3A 29 W 290µJ Standard 8.6 nC 9.2ns/281ns 800V, 3A, 82Ohm, 15V - -40°C ~ 150°C (TJ) Through Hole
STGF6M65DF2

STGF6M65DF2

IGBT TRENCH 650V 12A TO220FP

STMicroelectronics

2489 1.68
- +

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Немедленный

STGF6M65DF2

Datenblatt

Tube M Active Trench Field Stop 650 V 12 A 24 A 2V @ 15V, 6A 24.2 W 36µJ (on), 200µJ (off) Standard 21.2 nC 15ns/90ns 400V, 6A, 22Ohm, 15V 140 ns -55°C ~ 175°C (TJ) Through Hole
FGHL50T65MQDT

FGHL50T65MQDT

FS4 MID SPEED IGBT 650V 50A TO24

onsemi

2350 5.37
- +

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Немедленный

FGHL50T65MQDT

Datenblatt

Tube - Active Trench Field Stop 650 V 80 A 200 A 1.8V @ 15V, 40A 268 W 1.19mJ (on), 630µJ (off) Standard 99 nC 21ns/90ns 400V, 50A, 6Ohm, 15V 79 ns -55°C ~ 175°C (TJ) Through Hole
FGHL50T65MQDTL4

FGHL50T65MQDTL4

FS4 MID SPEED IGBT 650V 50A TO24

onsemi

2088 5.45
- +

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Немедленный

FGHL50T65MQDTL4

Datenblatt

Tube - Active Trench Field Stop 650 V 80 A 200 A 1.8V @ 15V, 50A 268 W 1mJ (on), 850µJ (off) Standard 99 nC 50ns/336ns 400V, 50A, 30Ohm, 15V 79 ns -55°C ~ 175°C (TJ) Through Hole
RGTH60TS65GC13

RGTH60TS65GC13

HIGH-SPEED SWITCHING TYPE, 650V

Rohm Semiconductor

3389 5.46
- +

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Немедленный

RGTH60TS65GC13

Datenblatt

Tube - Active Trench Field Stop 650 V 58 A 120 A 2.1V @ 15V, 30A 194 W - Standard 58 nC 27ns/105ns 400V, 30A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
RBN40H65T1FPQ-A0#CB0

RBN40H65T1FPQ-A0#CB0

ABU / IGBT

Renesas Electronics America Inc

2684 5.48
- +

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Немедленный

RBN40H65T1FPQ-A0#CB0

Datenblatt

Tube - Active Trench 650 V 80 A - 2V @ 15V, 40A 185 W 620µJ (on), 520µJ (off) Standard 28 nC 22ns/96ns 400V, 40A, 16Ohm, 15V 55 ns 175°C (TJ) Through Hole
FGA6560WDF

FGA6560WDF

IGBT TRENCH/FS 650V 120A TO3PN

onsemi

2436 5.10
- +

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Немедленный

FGA6560WDF

Datenblatt

Bulk,Tube - Last Time Buy Trench Field Stop 650 V 120 A 180 A 2.3V @ 15V, 60A 306 W 2.46mJ (on), 520µJ (off) Standard 84 nC 25.6ns/71ns 400V, 60A, 6Ohm, 15V 110 ns -55°C ~ 175°C (TJ) Through Hole
MIW40N65RA-BP

MIW40N65RA-BP

IGBT 650V 40A,TO-247AB

Micro Commercial Co

3251 5.11
- +

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Немедленный

Tube - Active Trench Field Stop 650 V 80 A 160 A 2.4V @ 15V, 40A 306 W 1.5mJ (on), 590µJ (off) Standard 160 nC 12ns/124ns 400V, 40A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
RGW40TK65GVC11

RGW40TK65GVC11

HIGH-SPEED FAST SWITCHING TYPE

Rohm Semiconductor

2203 0.00
- +

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Немедленный

RGW40TK65GVC11

Datenblatt

Tube - Active Trench Field Stop 650 V 27 A 80 A 1.9V @ 15V, 20A 61 W 330µJ (on), 300µJ (off) Standard 59 nC 33ns/76ns 400V, 20A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
AFGHL75T65SQ

AFGHL75T65SQ

IGBT WITH SIC COPACK DIODE IGBT

onsemi

3262 5.69
- +

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Немедленный

AFGHL75T65SQ

Datenblatt

Tube Automotive, AEC-Q101 Active Trench Field Stop 650 V 80 A 300 A 2.1V @ 15V, 75A 375 W 1.86mJ (on), 1.13mJ (off) Standard 139 nC 25ns/106ns 400V, 75A, 4.7Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
IKWH60N65WR6XKSA1

IKWH60N65WR6XKSA1

IGBT TRENCH

Infineon Technologies

3703 5.71
- +

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Немедленный

Tube * Active - - - - - - - - - - - - - -
RGTH00TS65DGC11

RGTH00TS65DGC11

IGBT 650V 85A 277W TO-247N

Rohm Semiconductor

2031 5.83
- +

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Немедленный

RGTH00TS65DGC11

Datenblatt

Tube - Active Trench Field Stop 650 V 85 A 200 A 2.1V @ 15V, 50A 277 W - Standard 94 nC 39ns/143ns 400V, 50A, 10Ohm, 15V 54 ns -40°C ~ 175°C (TJ) Through Hole
RBN50H65T1FPQ-A0#CB0

RBN50H65T1FPQ-A0#CB0

ABU / IGBT

Renesas Electronics America Inc

2728 5.84
- +

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Немедленный

RBN50H65T1FPQ-A0#CB0

Datenblatt

Tube - Active Trench 650 V 100 A - 2V @ 15V, 50A 250 W 830µJ (on), 670µJ (off) Standard 36 nC 20ns/93ns 400V, 50A, 16Ohm, 15V 65 ns 175°C (TJ) Through Hole
IKW25N120CS7XKSA1

IKW25N120CS7XKSA1

INDUSTRY 14 PG-TO247-3

Infineon Technologies

480 6.01
- +

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Немедленный

IKW25N120CS7XKSA1

Datenblatt

Tube Automotive, AEC-Q101, TrenchStop™ Active Trench Field Stop 1200 V 55 A 75 A 2V @ 15V, 25A 250 W 1.2mJ (on), 1.1mJ (off) Standard 150 nC 21ns/160ns 600V, 25A, 6Ohm, 15V 150 ns -40°C ~ 175°C (TJ) Through Hole
MIW25N120FA-BP

MIW25N120FA-BP

IGBT 1200V 25A,TO-247AB

Micro Commercial Co

2532 5.52
- +

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Немедленный

Tube - Active Trench Field Stop 1200 V 50 A 100 A 2.35V @ 15V, 25A 326 W 1.8mJ (on), 1.4mJ (off) Standard 200 nC 158ns/331ns 600V, 25A, 18Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
HGTG30N60B3_NL

HGTG30N60B3_NL

IGBT, 60A, 600V, N-CHANNEL

Fairchild Semiconductor

2477 0.00
- +

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Немедленный

HGTG30N60B3_NL

Datenblatt

Bulk - Active NPT 600 V 60 A 220 A 1.9V @ 15V, 30A 208 W 550µJ (on), 680µJ (off) Standard 250 nC 36ns/137ns 480V, 60A, 3Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
HGTG40N60C3

HGTG40N60C3

75A, 600V, N-CHANNEL IGBT

Harris Corporation

2288 5.61
- +

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Немедленный

HGTG40N60C3

Datenblatt

Bulk - Active - 600 V 75 A 300 A 1.8V @ 15V, 40A 291 W 850mJ (on), 1mJ (off) Standard 395 nC 47ns/185ns 480V, 40A, 3Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
RGTH60TS65DGC13

RGTH60TS65DGC13

HIGH-SPEED SWITCHING TYPE, 650V

Rohm Semiconductor

2789 6.26
- +

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Немедленный

RGTH60TS65DGC13

Datenblatt

Tube - Active Trench Field Stop 650 V 58 A 120 A 2.1V @ 15V, 30A 194 W - Standard 58 nC 27ns/105ns 400V, 30A, 10Ohm, 15V 58 ns -40°C ~ 175°C (TJ) Through Hole
RBN25H125S1FPQ-A0#CB0

RBN25H125S1FPQ-A0#CB0

ABU / IGBT

Renesas Electronics America Inc

2513 6.35
- +

Добавить

Немедленный

RBN25H125S1FPQ-A0#CB0

Datenblatt

Tube - Active Trench 1250 V 50 A - 2.34V @ 15V, 25A 223 W 1.1mJ (on), 800µJ (off) Standard 56 nC 19ns/109ns 600V, 25A, 10Ohm, 15V 102 ns 175°C (TJ) Through Hole
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