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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
FGH75T65UPD

FGH75T65UPD

IGBT 650V 150A 375W TO-247AB

onsemi

2508 1.00
- +

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Немедленный

Bulk - Not For New Designs Trench Field Stop 650 V 150 A 225 A 2.3V @ 15V, 75A 375 W 2.85mJ (on), 1.2mJ (off) Standard 385 nC 32ns/166ns 400V, 75A, 3Ohm, 15V 85 ns -55°C ~ 175°C (TJ) Through Hole
FGH40T65SHD-F155

FGH40T65SHD-F155

IGBT 650V 80A 268W TO-247

onsemi

3223 4.38
- +

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Немедленный

FGH40T65SHD-F155

Datenblatt

Tube - Active Trench Field Stop 650 V 80 A 120 A 2.1V @ 15V, 40A 268 W 1.01mJ (on), 297µJ (off) Standard 72.2 nC 19.2ns/65.6ns 400V, 40A, 6Ohm, 15V 31.8 ns -55°C ~ 175°C (TJ) Through Hole
HGTP20N60C3R

HGTP20N60C3R

40A, 600V, RUGGED N-CHANNEL IGBT

Harris Corporation

3399 4.53
- +

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HGTP20N60C3R

Datenblatt

Bulk - Active - 600 V 45 A 300 A 1.8V @ 15V, 20A 164 W 500µJ (on), 500µJ (off) Standard 122 nC 28ns/151ns 480V, 20A, 10Ohm, 15V 24 ns -55°C ~ 150°C (TJ) Through Hole
MGW30N60

MGW30N60

IGBT, 50A, 600V, N-CHANNEL

Motorola

2591 0.00
- +

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Немедленный

MGW30N60

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
IRG8P40N120KDEPB

IRG8P40N120KDEPB

IGBT WITH ULTRAFAST SOFT RECOVER

International Rectifier

100 4.64
- +

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IRG8P40N120KDEPB

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
IRG4PH50KDPBF-INF

IRG4PH50KDPBF-INF

SHORT CIRCUIT RATED ULTRAFAST IG

Infineon Technologies

3285 0.00
- +

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Немедленный

Bulk * Active - - - - - - - - - - - - - -
IRGP6690DPBF

IRGP6690DPBF

IGBT W/ULTRAFAST SOFT RECOVERY D

International Rectifier

2653 0.00
- +

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Немедленный

IRGP6690DPBF

Datenblatt

Bulk - Active - 600 V 140 A 225 A 1.95V @ 15V, 75A 483 W 3.1mJ (on), 2.8mJ (off) Standard 140 nC 85ns/222ns 400V, 75A, 10Ohm, 15V 90 ns -40°C ~ 175°C (TJ) Through Hole
IKWH50N65WR6XKSA1

IKWH50N65WR6XKSA1

IGBT TRENCH

Infineon Technologies

3412 5.00
- +

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Немедленный

Tube * Active - - - - - - - - - - - - - -
IRG7PH46UEP

IRG7PH46UEP

IGBT, 108A, 1200V, N-CHANNEL

Infineon Technologies

100 4.80
- +

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Немедленный

IRG7PH46UEP

Datenblatt

Bulk - Active Trench 1200 V 130 A 160 A 2V @ 15V, 40A 469 W 2.56mJ (on), 1.78mJ (off) Standard 220 nC 45ns/410ns 600V, 40A, 10Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
FGA30T65SHD

FGA30T65SHD

IGBT TRENCH/FS 650V 60A TO3PN

onsemi

3383 4.84
- +

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Немедленный

FGA30T65SHD

Datenblatt

Bulk,Tube - Last Time Buy Trench Field Stop 650 V 60 A 90 A 2.1V @ 15V, 30A 238 W 598µJ (on), 167µJ (off) Standard 54.7 nC 14.4ns/52.8ns 400V, 30A, 6Ohm, 15V 31.8 ns -55°C ~ 175°C (TJ) Through Hole
IRGP50B60PDPBF-INF

IRGP50B60PDPBF-INF

AUTOMOTIVE WARP2 IGBT ULTRAFAST

Infineon Technologies

3099 0.00
- +

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Немедленный

IRGP50B60PDPBF-INF

Datenblatt

Bulk - Active NPT 600 V 75 A 150 A 2.6V @ 15V, 33A 370 W 360µJ (on), 380µJ (off) Standard 240 nC 34ns/130ns 390V, 33A, 3.3Ohm, 15V 50 ns -55°C ~ 150°C (TJ) Through Hole
RJH65T04BDPM-A0#T2

RJH65T04BDPM-A0#T2

ABU / IGBT

Renesas Electronics America Inc

3261 5.20
- +

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Немедленный

RJH65T04BDPM-A0#T2

Datenblatt

Tube - Active Trench 650 V 60 A - 1.95V @ 15V, 30A 65 W 360µJ (on), 350µJ (off) Standard 74 nC 35ns/125ns 400V, 30A, 10Ohm, 15V 80 ns 175°C (TJ) Through Hole
APT50GN60BG

APT50GN60BG

IGBT 600V 107A 366W TO247

Microchip Technology

3006 5.34
- +

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Немедленный

APT50GN60BG

Datenblatt

Tube - Active Trench Field Stop 600 V 107 A 150 A 1.85V @ 15V, 50A 366 W 1185µJ (on), 1565µJ (off) Standard 325 nC 20ns/230ns 400V, 50A, 4.3Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
FGA5065ADF

FGA5065ADF

IGBT TRENCH/FS 650V 100A TO3PN

onsemi

3247 5.04
- +

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Немедленный

FGA5065ADF

Datenblatt

Tube - Active Trench Field Stop 650 V 100 A 150 A 2.2V @ 15V, 50A 268 W 1.35mJ (on), 309µJ (off) Standard 72.2 nC 20.8ns/62.4ns 400V, 50A, 6Ohm, 15V 31.8 ns -55°C ~ 175°C (TJ) Through Hole
IXXX160N65C4

IXXX160N65C4

IGBT 650V 290A 940W PLUS247

IXYS

2435 18.46
- +

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Немедленный

IXXX160N65C4

Datenblatt

Tube GenX4™, XPT™ Active PT 650 V 290 A 800 A 2.1V @ 15V, 160A 940 W 3.5mJ (on), 1.3mJ (off) Standard 422 nC 52ns/197ns 400V, 80A, 1Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
AFGY160T65SPD-B4

AFGY160T65SPD-B4

IGBT - 650V, 160A FIELD STOP TRE

onsemi

3217 15.08
- +

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Немедленный

AFGY160T65SPD-B4

Datenblatt

Tube Automotive, AEC-Q100 Active Trench Field Stop 650 V 240 A 480 A 2.05V @ 15V, 160A 882 W 12.4mJ (on), 5.7mJ (off) Standard 245 nC 53ns/98ns 400V, 160A, 5Ohm, 15V 132 ns -55°C ~ 175°C (TJ) Through Hole
IXYK110N120C4

IXYK110N120C4

IGBT 1200V 110A GEN4 XPT TO264

IXYS

2343 21.11
- +

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Немедленный

IXYK110N120C4

Datenblatt

Tube XPT™ Active - 1200 V 310 A 740 A 2.4V @ 15V, 110A 1360 W 3.6mJ (on), 1.9mJ (off) Standard 330 nC 40ns/320ns 600V, 50A, 2Ohm, 15V 48 ns -55°C ~ 175°C (TJ) Through Hole
IXYK110N120B4

IXYK110N120B4

IGBT 1200V 110A GEN4 XPT TO264

IXYS

2064 21.11
- +

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Немедленный

IXYK110N120B4

Datenblatt

Tube XPT™ Active - 1200 V 340 A 800 A 2.1V @ 15V, 110A 1360 W 3.6mJ (on), 3.85mJ (off) Standard 340 nC 45ns/390ns 600V, 50A, 2Ohm, 15V 50 ns -55°C ~ 175°C (TJ) Through Hole
NGTD13T65F2SWK

NGTD13T65F2SWK

IGBT TRENCH FIELD STOP 650V DIE

onsemi

3293 1.62
- +

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Немедленный

NGTD13T65F2SWK

Datenblatt

Tape & Reel (TR) - Last Time Buy Trench Field Stop 650 V - 120 A 2.2V @ 15V, 30A - - Standard - - - - -55°C ~ 175°C (TJ) Surface Mount
GT15J341,S4X

GT15J341,S4X

PB-F DISCRETE IGBT TRANSISTOR TO

Toshiba Semiconductor and Storage

2270 1.58
- +

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Немедленный

GT15J341,S4X

Datenblatt

Tube - Active - 600 V 15 A 60 A 2V @ 15V, 15A 30 W 300µJ (on), 300µJ (off) Standard - 60ns/170ns 300V, 15A, 33Ohm, 15V 80 ns 150°C (TJ) Through Hole
Total 4915 Records«Prev1... 8889909192939495...246Next»
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