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Производитель. Часть #	Акции	А	Таблицы данных	Packaging	Series	ProductStatus	IGBTType	Configuration	Voltage-CollectorEmitterBreakdown(Max)	Current-Collector(Ic)(Max)	Power-Max	Vce(on)(Max)@VgeIc	Current-CollectorCutoff(Max)	InputCapacitance(Cies)@Vce	Input	NTCThermistor	OperatingTemperature	MountingType
VS-100MT060WDF IGBT MODULE 600V 121A 462W MTP Vishay General Semiconductor - Diodes Division	2151	- + Добавить Немедленный	Datenblatt	Tray	-	Obsolete	-	-	600 V	121 A	462 W	2.29V @ 15V, 60A	100 µA	9.5 nF @ 30 V	Standard	Yes	150°C (TJ)	Chassis Mount
VS-20MT050XC MOD IGBT 20A 500V MTP Vishay General Semiconductor - Diodes Division	3166	- + Добавить Немедленный		Tray	-	Active	-	-	-	-	-	-	-	-	-	No	-	-
VS-20MT120UFAPBF IGBT MODULE 1200V 20A 240W MTP Vishay General Semiconductor - Diodes Division	3378	- + Добавить Немедленный	Datenblatt	Tray	-	Obsolete	NPT	Full Bridge Inverter	1200 V	20 A	240 W	4.66V @ 15V, 40A	250 µA	3.79 nF @ 30 V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount
VS-20MT120UFP IGBT MODULE 1200V 40A 240W MTP Vishay General Semiconductor - Diodes Division	3390	- + Добавить Немедленный		Tray	-	Obsolete	NPT	Full Bridge Inverter	1200 V	40 A	240 W	4.66V @ 15V, 40A	250 µA	3.79 nF @ 30 V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount
VS-25MT060WFAPBF IGBT MODULE 600V 69A 195W MTP Vishay General Semiconductor - Diodes Division	2817	- + Добавить Немедленный	Datenblatt	Tray	-	Obsolete	-	Full Bridge Inverter	600 V	69 A	195 W	3.25V @ 15V, 50A	250 µA	5.42 nF @ 30 V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount
VS-40MT120UHAPBF IGBT MODULE 1200V 80A 463W MTP Vishay General Semiconductor - Diodes Division	3917	- + Добавить Немедленный		Tube	-	Obsolete	NPT	Half Bridge	1200 V	80 A	463 W	4.91V @ 15V, 80A	250 µA	8.28 nF @ 30 V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount
VS-40MT120UHTAPBF IGBT MODULE 1200V 80A 463W MTP Vishay General Semiconductor - Diodes Division	3132	- + Добавить Немедленный		Tray	-	Obsolete	NPT	Half Bridge	1200 V	80 A	463 W	4.91V @ 15V, 80A	250 µA	8.28 nF @ 30 V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount
VS-50MT060WHTAPBF IGBT MODULE 600V 114A 658W MTP Vishay General Semiconductor - Diodes Division	3910	- + Добавить Немедленный		Tray	-	Obsolete	-	Half Bridge	600 V	114 A	658 W	3.2V @ 15V, 100A	400 µA	7.1 nF @ 30 V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount
VS-70MT060WHTAPBF IGBT MODULE 600V 100A 347W MTP Vishay General Semiconductor - Diodes Division	2154	- + Добавить Немедленный	Datenblatt	Tray	-	Obsolete	NPT	Half Bridge	600 V	100 A	347 W	3.4V @ 15V, 140A	700 µA	8 nF @ 30 V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount
VS-70MT060WSP IGBT MODULE 600V 96A 378W MTP Vishay General Semiconductor - Diodes Division	3041	- + Добавить Немедленный	Datenblatt	Tray	-	Obsolete	-	Single	600 V	96 A	378 W	2.15V @ 15V, 40A	100 µA	7.43 nF @ 30 V	Single Phase Bridge Rectifier	Yes	150°C (TJ)	Chassis Mount
QID1210005 IGBT MODULE 1200V 100A 730W Powerex Inc.	2741	- + Добавить Немедленный	Datenblatt	Bulk	-	Active	-	2 Independent	1200 V	100 A	730 W	6.5V @ 15V, 100A	1 mA	16 nF @ 10 V	Standard	No	-40°C ~ 150°C (TJ)	-
QID1210006 IGBT MODULE 1200V 100A 570W Powerex Inc.	2585	- + Добавить Немедленный	Datenblatt	Bulk	-	Active	-	2 Independent	1200 V	100 A	570 W	6.5V @ 15V, 100A	1 mA	16 nF @ 10 V	Standard	No	-40°C ~ 150°C (TJ)	-
QID1210007 IGBT MODULE 1200V 100A 730W Powerex Inc.	2699	- + Добавить Немедленный	Datenblatt	Bulk	-	Active	-	2 Independent	1200 V	100 A	730 W	6.5V @ 15V, 100A	1 mA	16 nF @ 10 V	Standard	No	-40°C ~ 150°C (TJ)	-
QID1215003 IGBT MODULE 1200V 150A 960W Powerex Inc.	3742	- + Добавить Немедленный	Datenblatt	Bulk	-	Active	-	2 Independent	1200 V	150 A	960 W	6.5V @ 15V, 150A	1 mA	24 nF @ 10 V	Standard	No	-40°C ~ 150°C (TJ)	-
VS-ETF150Y65U IGBT MOD 650V 142A EMIPAK-2B Vishay General Semiconductor - Diodes Division	2357	- + Добавить Немедленный	Datenblatt	Tray	-	Obsolete	Trench	Three Level Inverter	650 V	142 A	417 W	2.06V @ 15V, 100A	100 µA	6.6 nF @ 30 V	Standard	No	175°C (TJ)	Chassis Mount
VS-GB55LA120UX IGBT MOD 1200V 84A 431W SOT227 Vishay General Semiconductor - Diodes Division	3848	- + Добавить Немедленный		Tube	HEXFRED®	Obsolete	NPT	Single	1200 V	84 A	431 W	-	50 µA	-	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount
VS-GB55NA120UX IGBT MOD 1200V 84A 431W SOT227 Vishay General Semiconductor - Diodes Division	2171	- + Добавить Немедленный		Tube	HEXFRED®	Obsolete	NPT	Single	1200 V	84 A	431 W	-	50 µA	-	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount
VS-GB75LA60UF IGBT MOD 600V 109A 447W SOT227 Vishay General Semiconductor - Diodes Division	3311	- + Добавить Немедленный		Tube	-	Obsolete	NPT	Single	600 V	109 A	447 W	2V @ 15V, 35A	50 µA	-	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount
VS-GB75NA60UF IGBT MOD 600V 109A 447W SOT227 Vishay General Semiconductor - Diodes Division	2044	- + Добавить Немедленный		Tube	-	Obsolete	NPT	Single	600 V	109 A	447 W	2V @ 15V, 35A	50 µA	-	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount
VS-GT105LA120UX IGBT MOD 1200V 134A 463W SOT227 Vishay General Semiconductor - Diodes Division	2284	- + Добавить Немедленный		Tube	-	Obsolete	NPT	Single	1200 V	134 A	463 W	-	75 µA	-	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount