Transistors - IGBTs - Modules - Element(Гонконг) Technology Co., Ltd.

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Производитель. Часть #	Акции	А	Таблицы данных	Packaging	Series	ProductStatus	IGBTType	Configuration	Voltage-CollectorEmitterBreakdown(Max)	Current-Collector(Ic)(Max)	Power-Max	Vce(on)(Max)@VgeIc	Current-CollectorCutoff(Max)	InputCapacitance(Cies)@Vce	Input	NTCThermistor	OperatingTemperature	MountingType
APTGT75DH60T1G IGBT MODULE 600V 100A 250W SP1 Microsemi Corporation	3705	- + Добавить Немедленный		Bulk	-	Obsolete	Trench Field Stop	Asymmetrical Bridge	600 V	100 A	250 W	1.9V @ 15V, 75A	250 µA	4.62 nF @ 25 V	Standard	Yes	-40°C ~ 175°C (TJ)	Chassis Mount
APTGV50H60BT3G IGBT MODULE 600V 65A 250W SP3 Microsemi Corporation	3970	- + Добавить Немедленный		Bulk	-	Active	NPT, Trench Field Stop	Boost Chopper, Full Bridge	600 V	65 A	250 W	2.45V @ 15V, 50A	250 µA	2.2 nF @ 25 V	Standard	Yes	-	Chassis Mount
APT15GF120JCU2 IGBT MOD 1200V 30A 156W SOT227 Microsemi Corporation	2736	- + Добавить Немедленный		Bulk	-	Obsolete	NPT	Single	1200 V	30 A	156 W	3.7V @ 15V, 15A	250 µA	1 nF @ 25 V	Standard	No	-	Chassis, Stud Mount
APT25GF120JCU2 IGBT MOD 1200V 45A 227W SOT227 Microsemi Corporation	3769	- + Добавить Немедленный		Bulk	-	Obsolete	NPT	Single	1200 V	45 A	227 W	3.7V @ 15V, 25A	250 µA	1.65 nF @ 25 V	Standard	No	-	Chassis, Stud Mount
APTGF90DA60CT1G IGBT MODULE 600V 110A 416W SP1 Microsemi Corporation	2638	- + Добавить Немедленный		Bulk	-	Obsolete	NPT	Single	600 V	110 A	416 W	2.5V @ 15V, 100A	250 µA	4.3 nF @ 25 V	Standard	Yes	-	Chassis Mount
APT50GF60JCU2 IGBT MODULE 600V 70A 277W SOT227 Microsemi Corporation	3880	- + Добавить Немедленный		Bulk	-	Obsolete	NPT	Single	600 V	70 A	277 W	2.45V @ 15V, 50A	250 µA	2.2 nF @ 25 V	Standard	No	-55°C ~ 150°C (TJ)	Chassis, Stud Mount
APTGT30TL60T3G IGBT MODULE 600V 50A 90W SP3 Microsemi Corporation	3489	- + Добавить Немедленный		Bulk	-	Obsolete	Trench Field Stop	Three Level Inverter	600 V	50 A	90 W	1.9V @ 15V, 30A	250 µA	1.6 nF @ 25 V	Standard	Yes	-40°C ~ 175°C (TJ)	Chassis Mount
APTGT75A1202G IGBT MODULE 1200V 110A 357W SP2 Microsemi Corporation	3804	- + Добавить Немедленный		Bulk	-	Obsolete	Trench Field Stop	Half Bridge	1200 V	110 A	357 W	2.1V @ 15V, 75A	50 µA	5.34 nF @ 25 V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount
APTGF50DA120CT1G IGBT MODULE 1200V 75A 312W SP1 Microsemi Corporation	2554	- + Добавить Немедленный		Bulk	-	Obsolete	NPT	Single	1200 V	75 A	312 W	3.7V @ 15V, 50A	250 µA	3.45 nF @ 25 V	Standard	Yes	-	Chassis Mount
CM150TX-24S1 IGBT MOD 1200V 150A 935W Powerex Inc.	2414	- + Добавить Немедленный	Datenblatt	Tray	-	Discontinued at Mosen	-	Three Level Inverter	1200 V	150 A	935 W	2.25V @ 15V, 150A	1 mA	15 nF @ 10 V	Standard	Yes	-40°C ~ 150°C (TJ)	-
CM225DX-24S1 IGBT MOD 1200V 225A 1250W Powerex Inc.	3438	- + Добавить Немедленный	Datenblatt	Tray	-	Discontinued at Mosen	-	Half Bridge	1200 V	225 A	1250 W	2.35V @ 15V, 225A	1 mA	20 nF @ 10 V	Standard	Yes	-40°C ~ 150°C (TJ)	-
CM300DX-24S1 IGBT MOD 1200V 300A 1850W Powerex Inc.	3946	- + Добавить Немедленный	Datenblatt	Tray	-	Discontinued at Mosen	-	Half Bridge	1200 V	300 A	1850 W	2.25V @ 15V, 300A	1 mA	30 nF @ 10 V	Standard	Yes	-40°C ~ 150°C (TJ)	-
CM450DX-24S1 IGBT MOD 1200V 450A 2775W Powerex Inc.	3417	- + Добавить Немедленный	Datenblatt	Tray	-	Discontinued at Mosen	-	Half Bridge	1200 V	450 A	2775 W	2.25V @ 15V, 450A	1 mA	45 nF @ 10 V	Standard	Yes	-40°C ~ 150°C (TJ)	-
CM600DX-24S1 IGBT MOD 1200V 600A 3330W Powerex Inc.	3245	- + Добавить Немедленный	Datenblatt	Tray	-	Discontinued at Mosen	-	Half Bridge	1200 V	600 A	3330 W	2.45V @ 15V, 600A	1 mA	50 nF @ 10 V	Standard	Yes	-40°C ~ 150°C (TJ)	-
VS-CPV362M4FPBF IGBT MODULE 600V 8.8A 23W IMS-2 Vishay General Semiconductor - Diodes Division	3613	- + Добавить Немедленный	Datenblatt	Bulk	-	Obsolete	-	-	600 V	8.8 A	23 W	1.7V @ 15V, 4.8A	250 µA	340 pF @ 30 V	Standard	No	-40°C ~ 150°C (TJ)	Through Hole
VS-EMF050J60U IGBT MOD 600V 88A 338W EMIPAK2 Vishay General Semiconductor - Diodes Division	3631	- + Добавить Немедленный	Datenblatt	Bulk	-	Obsolete	-	Three Level Inverter	600 V	88 A	338 W	2.1V @ 15V, 50A	100 µA	9.5 nF @ 30 V	Standard	No	150°C (TJ)	Chassis Mount
VS-EMG050J60N IGBT MOD 600V 88A 338W EMIPAK2 Vishay General Semiconductor - Diodes Division	3315	- + Добавить Немедленный	Datenblatt	Bulk	-	Obsolete	-	Half Bridge	600 V	88 A	338 W	2.1V @ 15V, 50A	100 µA	9.5 nF @ 30 V	Standard	Yes	150°C (TJ)	Chassis Mount
VS-ENQ030L120S IGBT MOD 1200V 61A EMIPAK-1B Vishay General Semiconductor - Diodes Division	3684	- + Добавить Немедленный	Datenblatt	Bulk	-	Active	Trench	Three Level Inverter	1200 V	61 A	216 W	2.52V @ 15V, 30A	230 µA	3.34 nF @ 30 V	Standard	Yes	150°C (TJ)	Chassis Mount
VS-ETL015Y120H IGBT MOD 1200V 22A 89W EMIPAK-2B Vishay General Semiconductor - Diodes Division	2474	- + Добавить Немедленный	Datenblatt	Bulk	-	Active	Trench	-	1200 V	22 A	89 W	3.03V @ 15V, 15A	75 µA	1.07 nF @ 30 V	Standard	Yes	150°C (TJ)	Chassis Mount
VS-GA100NA60UP IGBT MOD 600V 100A 250W SOT227 Vishay General Semiconductor - Diodes Division	3319	- + Добавить Немедленный	Datenblatt	Bulk	-	Obsolete	-	Single	600 V	100 A	250 W	2.1V @ 15V, 50A	250 µA	7.4 nF @ 30 V	Standard	No	-55°C ~ 150°C (TJ)	Chassis Mount