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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
PJF60R980E_T0_00001

PJF60R980E_T0_00001

600V N-CHANNEL SUPER JUNCTION MO

Panjit International Inc.

2754 1.35
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Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 980mOhm @ 1.5A, 10V 4V @ 250µA 14.4 nC @ 10 V ±20V 300 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF7832PBF

IRF7832PBF

HEXFET POWER MOSFET

International Rectifier

2162 1.00
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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Ta) 4.5V, 10V 4mOhm @ 20A, 10V 2.32V @ 250µA 51 nC @ 4.5 V ±20V 4310 pF @ 15 V - 2.5W (Ta) -55°C ~ 155°C (TJ) Surface Mount
AUIRF2907ZS7PTL

AUIRF2907ZS7PTL

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier

2549 1.00
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Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 180A (Tc) 10V 3.8mOhm @ 110A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 7580 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTMFS5C645NLT1G

NTMFS5C645NLT1G

MOSFET N-CH 60V 22A/100A 5DFN

onsemi

2256 2.76
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NTMFS5C645NLT1G

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 22A (Ta), 100A (Tc) 4.5V, 10V 4mOhm @ 50A, 10V 2V @ 250µA 34 nC @ 10 V ±20V 2200 pF @ 50 V - 3.7W (Ta), 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR4620PBF

IRFR4620PBF

PFET, 24A I(D), 200V, 0.078OHM

International Rectifier

3634 0.00
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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 24A (Tc) 10V 78mOhm @ 15A, 10V 5V @ 100µA 38 nC @ 10 V ±20V 1710 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ)
AUIRFR3607TRL

AUIRFR3607TRL

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier

3402 1.00
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Немедленный

AUIRFR3607TRL

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 56A (Tc) - 9mOhm @ 46A, 10V 4V @ 100µA 84 nC @ 10 V - 3070 pF @ 50 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
R6511END3TL1

R6511END3TL1

650V 11A TO-252, LOW-NOISE POWER

Rohm Semiconductor

2106 2.94
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R6511END3TL1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 400mOhm @ 3.8A, 10V 4V @ 320µA 32 nC @ 10 V ±20V 670 pF @ 25 V - 124W (Tc) 150°C (TJ) Surface Mount
AUIRF6218STRL

AUIRF6218STRL

AUTOMOTIVE HEXFET P CHANNEL

International Rectifier

2325 1.00
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AUIRF6218STRL

Datenblatt

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 150 V 27A (Tc) 10V 150mOhm @ 16A, 10V 5V @ 250µA 110 nC @ 10 V ±20V 2210 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR5505PBF

IRFR5505PBF

POWER MOSFET

International Rectifier

3309 1.00
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Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 18A (Tc) 10V 110mOhm @ 9.6A, 10V 4V @ 250µA 32 nC @ 10 V ±20V 650 pF @ 25 V - 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLZ44ZSPBF

IRLZ44ZSPBF

MOSFET N-CH 55V 51A TO263-3-2

International Rectifier

3569 1.00
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IRLZ44ZSPBF

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 51A (Tc) - 13.5mOhm @ 31A, 10V 3V @ 250µA 36 nC @ 5 V ±16V 1620 pF @ 25 V - 80W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS3307Z

AUIRFS3307Z

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier

3917 1.00
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Немедленный

AUIRFS3307Z

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 5.8mOhm @ 75A, 10V 4V @ 150µA 110 nC @ 10 V ±20V 4750 pF @ 50 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HUF76122P3

HUF76122P3

HUF76122P3

Harris Corporation

2879 1.00
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Bulk * Active - - - - - - - - - - - - - -
AUIRF3808S

AUIRF3808S

MOSFET N-CH 75V 106A D2PAK

International Rectifier

2644 1.00
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AUIRF3808S

Datenblatt

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 106A (Tc) - 7mOhm @ 82A, 10V 4V @ 250µA 220 nC @ 10 V ±20V 5310 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7855PBF

IRF7855PBF

MOSFET N-CH 60V 12A 8SO

International Rectifier

2581 1.00
- +

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Немедленный

IRF7855PBF

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 12A (Ta) - 9.4mOhm @ 12A, 10V 4.9V @ 100µA 39 nC @ 10 V ±20V 1560 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
AUIRFS3006TRL

AUIRFS3006TRL

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier

2975 1.00
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Немедленный

AUIRFS3006TRL

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) - 2.5mOhm @ 170A, 10V 4V @ 250µA 300 nC @ 10 V - 8970 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS41N15DTRLP

IRFS41N15DTRLP

HEXFET POWER MOSFET

International Rectifier

3132 1.00
- +

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Немедленный

IRFS41N15DTRLP

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 41A (Tc) 10V 45mOhm @ 25A, 10V 5.5V @ 250µA 110 nC @ 10 V ±30V 2520 pF @ 25 V - 3.1W (Ta) -55°C ~ 175°C (TJ) Surface Mount
NTTFS022N15MC

NTTFS022N15MC

POWER MOSFET, N CHANNEL, 150V, 3

onsemi

2736 2.99
- +

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Немедленный

NTTFS022N15MC

Datenblatt

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 7.4A (Ta), 37.2A (Tc) 8V, 10V 22mOhm @ 18A, 10V 4.5V @ 100µA 17 nC @ 10 V ±20V 1315 pF @ 75 V - 1.2W (Ta), 71.4W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PJP60R980E_T0_00001

PJP60R980E_T0_00001

600V N-CHANNEL SUPER JUNCTION MO

Panjit International Inc.

2282 1.37
- +

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Немедленный

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 980mOhm @ 1.5A, 10V 4V @ 250µA 14.4 nC @ 10 V ±20V 300 pF @ 25 V - 58W (Tc) -55°C ~ 150°C (TJ) Through Hole
PJP100P03_T0_00001

PJP100P03_T0_00001

30V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

3203 1.37
- +

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Немедленный

PJP100P03_T0_00001

Datenblatt

Tube - Active P-Channel MOSFET (Metal Oxide) 30 V 15.8A (Ta), 100A (Tc) 4.5V, 10V 5mOhm @ 20A, 10V 2.5V @ 250µA 107 nC @ 10 V ±20V 6067 pF @ 25 V - 2W (Ta), 119W (Tc) -55°C ~ 150°C (TJ) Through Hole
PMZB370UNE,315

PMZB370UNE,315

EFFECT TRANSISTOR, 0.9A I(D), 30

NXP USA Inc.

3171 1.00
- +

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Немедленный

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 900mA (Ta) 1.8V, 4.5V 490mOhm @ 500mA, 4.5V 1.05V @ 250µA 1.16 nC @ 15 V ±8V 78 pF @ 25 V - 360mW (Ta), 2.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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