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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
PJP3NA80_T0_00001

PJP3NA80_T0_00001

800V N-CHANNEL MOSFET

Panjit International Inc.

3858 1.31
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Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 3A (Ta) 10V 4.8Ohm @ 1.5A, 10V 4V @ 250µA 11 nC @ 10 V ±30V 406 pF @ 25 V - 106W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRFS4010

AUIRFS4010

MOSFET N-CH 100V 180A TO263

International Rectifier

2950 1.00
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AUIRFS4010

Datenblatt

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) - 4.7mOhm @ 106A, 10V 4V @ 250µA 215 nC @ 10 V ±20V 9575 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS4410ZPBF

IRFS4410ZPBF

MOSFET N-CH 100V 97A TO263-3-2

International Rectifier

3178 1.00
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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 97A (Tc) - 9mOhm @ 58A, 10V 4V @ 150µA 120 nC @ 10 V ±20V 4820 pF @ 50 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6655TRPBF

IRF6655TRPBF

100V 19A DIRECTFET-MV

International Rectifier

3037 1.00
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IRF6655TRPBF

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 4.2A (Ta), 19A (Tc) 10V 62mOhm @ 5A, 10V 4.8V @ 25µA 11.7 nC @ 10 V ±20V 530 pF @ 25 V - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF730

IRF730

N-CHANNEL, MOSFET

Harris Corporation

3653 1.00
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IRF730

Datenblatt

Bulk PowerMESH™ II Active N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tc) 10V 1Ohm @ 3A, 10V 4V @ 250µA 24 nC @ 10 V ±20V 530 pF @ 25 V - 100W (Tc) 150°C (TJ) Through Hole
SIR570DP-T1-RE3

SIR570DP-T1-RE3

N-CHANNEL 150 V (D-S) MOSFET POW

Vishay Siliconix

3152 2.59
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SIR570DP-T1-RE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen V Active N-Channel MOSFET (Metal Oxide) 150 V 19A (Ta), 77.4A (Tc) 7.5V, 10V 7.9mOhm @ 20A, 10V 4V @ 250µA 71 nC @ 10 V ±20V 3740 pF @ 75 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF710

IRF710

PFET, 2A I(D), 400V, 3.6OHM, 1-E

Harris Corporation

2800 1.00
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IRF710

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 2A (Tc) 10V 3.6Ohm @ 1.1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 135 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF7241PBF

IRF7241PBF

HEXFET POWER MOSFET

International Rectifier

2546 1.00
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Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 40 V 6.2A (Ta) 4.5V, 10V 41mOhm @ 6.2A, 10V 3V @ 250µA 80 nC @ 10 V ±20V 3220 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLL014NPBF

IRLL014NPBF

MOSFET N-CH 55V 2A SOT223

International Rectifier

2331 1.00
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IRLL014NPBF

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 2A (Ta) - 140mOhm @ 2A, 10V 2V @ 250µA 14 nC @ 10 V ±16V 230 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLR2908TRLPBF

IRLR2908TRLPBF

IRLR2908 - HEXFET POWER MOSFET

International Rectifier

2017 1.00
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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 80 V 30A (Tc) 4.5V, 10V 28mOhm @ 23A, 10V 2.5V @ 250µA 33 nC @ 4.5 V ±16V 1890 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PMV100XPEA,215

PMV100XPEA,215

MOSFET P-CH 20V 2.4A TO236AB

Nexperia USA Inc.

3093 1.00
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PMV100XPEA,215

Datenblatt

Bulk - Active P-Channel MOSFET (Metal Oxide) 20 V 2.4A (Ta) - 128mOhm @ 2.4A, 4.5V 1.25V @ 250µA 6 nC @ 4.5 V ±12V 386 pF @ 10 V - 463mW (Ta), 4.45W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLR7807ZTRPBF

IRLR7807ZTRPBF

IRLR7807 - HEXFET POWER MOSFET

International Rectifier

3415 1.00
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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 43A (Tc) 4.5V, 10V 13.8mOhm @ 15A, 10V 2.25V @ 250µA 11 nC @ 4.5 V ±20V 780 pF @ 15 V - 40W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7406PBF

IRF7406PBF

AUTOMOTIVE HEXFET P-CHANNEL POWE

International Rectifier

3793 1.00
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Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 30 V 5.8A (Ta) 4.5V, 10V 45mOhm @ 2.8A, 10V 1V @ 250µA 59 nC @ 10 V ±20V 1100 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLR3705ZPBF

IRLR3705ZPBF

HEXFET POWER MOSFET

International Rectifier

2719 1.00
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IRLR3705ZPBF

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 4.5V, 10V 8mOhm @ 42A, 10V 3V @ 250µA 66 nC @ 5 V ±16V 2900 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7473PBF

IRF7473PBF

HEXFET POWER MOSFET

International Rectifier

2218 1.00
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IRF7473PBF

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 6.9A (Ta) 10V 26mOhm @ 4.1A, 10V 5.5V @ 250µA 61 nC @ 10 V ±20V 3180 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFIZ48NPBF

IRFIZ48NPBF

HEXFET POWER MOSFET

International Rectifier

2934 1.00
- +

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IRFIZ48NPBF

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 40A (Tc) 10V 16mOhm @ 22A, 10V 4V @ 250µA 89 nC @ 10 V ±20V 1900 pF @ 25 V - 54W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDMS3572

FDMS3572

MOSFET N-CH 80V 8.8A/22A 8MLP

onsemi

2013 2.90
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FDMS3572

Datenblatt

Tape & Reel (TR),Cut Tape (CT) UltraFET™ Active N-Channel MOSFET (Metal Oxide) 80 V 8.8A (Ta), 22A (Tc) 6V, 10V 16.5mOhm @ 8.8A, 10V 4V @ 250µA 40 nC @ 10 V ±20V 2490 pF @ 40 V - 2.5W (Ta), 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFP044NPBF

IRFP044NPBF

HEXFET POWER MOSFET

International Rectifier

3265 1.00
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IRFP044NPBF

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 53A (Tc) 10V 20mOhm @ 29A, 10V 4V @ 250µA 61 nC @ 10 V ±20V 1500 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) Through Hole
RM21N700T2

RM21N700T2

MOSFET N-CH 700V 21A TO220-3

Rectron USA

2287 1.33
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Tube - Active N-Channel MOSFET (Metal Oxide) 700 V 21A (Tc) 10V 190mOhm @ 10.5A, 10V 3.5V @ 250µA - ±30V 1950 pF @ 50 V - 200W (Tc) -55°C ~ 150°C (TJ) Through Hole
RM21N700TI

RM21N700TI

MOSFET N-CHANNEL 700V 21A TO220F

Rectron USA

3638 1.33
- +

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Немедленный

Tube - Active N-Channel MOSFET (Metal Oxide) 700 V 21A (Tc) 10V 190mOhm @ 10.5A, 10V 3.5V @ 250µA - ±30V 1950 pF @ 50 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
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