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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFR220

IRFR220

MOSFET N-CH 200V 4.6A TO252AA

Harris Corporation

2773 0.00
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IRFR220

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Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 4.6A (Tc) - 800mOhm @ 2.4A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 330 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IAUZ40N06S5L050ATMA1

IAUZ40N06S5L050ATMA1

MOSFET_)40V 60V) PG-TSDSON-8

Infineon Technologies

3199 1.23
- +

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IAUZ40N06S5L050ATMA1

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Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™-5 Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Tj) 4.5V, 10V 5mOhm @ 20A, 10V 2.2V @ 29µA 36.7 nC @ 10 V ±16V 2500 pF @ 30 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PJD60R390E_L2_00001

PJD60R390E_L2_00001

600V N-CHANNEL SUPER JUNCTION MO

Panjit International Inc.

3677 2.02
- +

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Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 1.5A (Ta), 11A (Tc) 10V 390mOhm @ 3.8A, 10V 4V @ 250µA 32 nC @ 10 V ±20V 531 pF @ 25 V - 2W (Ta), 124W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RJK0391DPA-00#J5A

RJK0391DPA-00#J5A

MOSFET N-CH 30V 50A 8WPAK

Renesas Electronics America Inc

2789 0.93
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RJK0391DPA-00#J5A

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Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 50A (Ta) 4.5V, 10V 2.9mOhm @ 25A, 10V 2.5V @ 1mA 34 nC @ 4.5 V ±20V 5600 pF @ 10 V - 50W (Tc) 150°C (TJ) Surface Mount
NTMFS6H824NT1G

NTMFS6H824NT1G

T8 80V U8FL

onsemi

2912 1.90
- +

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NTMFS6H824NT1G

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 80 V 19A (Ta), 103A (Tc) 6V, 10V 4.5mOhm @ 20A, 10V 4V @ 140µA 38 nC @ 10 V ±20V 2470 pF @ 40 V - 3.8W (Ta), 115W (Tc) -55°C ~ 175°C (TJ) Surface Mount
DMP32M6SPS-13

DMP32M6SPS-13

MOSFET P-CH 30V 100A PWRDI5060-8

Diodes Incorporated

2194 2.03
- +

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DMP32M6SPS-13

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 4.5V, 10V 2.6mOhm @ 20A, 10V 2.5V @ 250µA 158 nC @ 10 V ±20V 8594 pF @ 15 V - 1.3W -55°C ~ 150°C (TJ) Surface Mount
RM135N100HD

RM135N100HD

MOSFET N-CH 100V 135A TO263-2

Rectron USA

2233 0.94
- +

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Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 135A (Tc) 10V 4.6mOhm @ 60A, 10V 4.5V @ 250µA - ±20V 6400 pF @ 50 V - 210W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHFBC40AS-GE3

SIHFBC40AS-GE3

MOSFET N-CHANNEL 600V

Vishay Siliconix

1000 1.85
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SIHFBC40AS-GE3

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Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 42 nC @ 10 V ±30V 1036 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI6423DQ-T1-BE3

SI6423DQ-T1-BE3

P-CHANNEL 12-V (D-S) MOSFET

Vishay Siliconix

2584 1.85
- +

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SI6423DQ-T1-BE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 12 V 8.2A (Ta) 1.8V, 4.5V 8.5mOhm @ 9.5A, 4.5V 800mV @ 400µA 110 nC @ 5 V ±8V - - 1.05W (Ta) -55°C ~ 150°C (TJ) Surface Mount
HUFA76633S3S

HUFA76633S3S

MOSFET N-CH 100V 39A D2PAK

Fairchild Semiconductor

2219 0.00
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HUFA76633S3S

Datenblatt

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 39A (Tc) 4.5V, 10V 35mOhm @ 39A, 10V 3V @ 250µA 67 nC @ 10 V ±16V 1820 pF @ 25 V - 145W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQPF2NA90

FQPF2NA90

MOSFET N-CH 900V 1.7A TO220F

Fairchild Semiconductor

3346 0.00
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FQPF2NA90

Datenblatt

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 900 V 1.7A (Tc) 10V 5.8Ohm @ 850mA, 10V 5V @ 250µA 20 nC @ 10 V ±30V 680 pF @ 25 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQI4P40TU

FQI4P40TU

MOSFET P-CH 400V 3.5A I2PAK

Fairchild Semiconductor

2071 0.55
- +

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Tube QFET® Obsolete P-Channel MOSFET (Metal Oxide) 400 V 3.5A (Tc) 10V 3.1Ohm @ 1.75A, 10V 5V @ 250µA 23 nC @ 10 V ±30V 680 pF @ 25 V - 3.13W (Ta), 85W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI80N04S3-04

IPI80N04S3-04

N-CHANNEL POWER MOSFET

Infineon Technologies

2318 0.00
- +

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IPI80N04S3-04

Datenblatt

Bulk * Obsolete - - - - - - - - - - - - - -
IRF611

IRF611

N-CHANNEL POWER MOSFET

Harris Corporation

3375 0.00
- +

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IRF611

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 3.3A (Tc) 10V 1.5Ohm @ 1.6A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 135 pF @ 25 V - 43W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB45N06S4L08ATMA3

IPB45N06S4L08ATMA3

MOSFET N-CH 60V 45A TO263-3

Infineon Technologies

3924 1.92
- +

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Немедленный

IPB45N06S4L08ATMA3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) OptiMOS®-T2 Active N-Channel MOSFET (Metal Oxide) 60 V 45A (Tc) 4.5V, 10V 7.9mOhm @ 45A, 10V 2.2V @ 35µA 64 nC @ 10 V ±16V 4780 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RM150N100HD

RM150N100HD

MOSFET N-CH 100V 150A TO263-2

Rectron USA

3493 0.95
- +

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Немедленный

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 150A (Tc) 10V 4.2mOhm @ 70A, 10V 4V @ 250µA - +20V, -12V 6680 pF @ 50 V - 275W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FCD600N65S3R0

FCD600N65S3R0

MOSFET N-CH 650V 6A DPAK

onsemi

3694 1.30
- +

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FCD600N65S3R0

Datenblatt

Tape & Reel (TR),Cut Tape (CT) SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 6A (Tc) 10V 600mOhm @ 3A, 10V 4.5V @ 600µA 11 nC @ 10 V ±30V 465 pF @ 400 V - 54W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BUZ32

BUZ32

MOSFET N-CH 200V 9.5A TO220AB

Harris Corporation

3991 0.00
- +

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Немедленный

BUZ32

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9.5A (Tc) - 400mOhm @ 4.5A, 10V 4V @ 1mA - ±20V 2000 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLU3105PBF

IRLU3105PBF

MOSFET N-CH 55V 25A IPAK

International Rectifier

2873 0.00
- +

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IRLU3105PBF

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 25A (Tc) - 37mOhm @ 15A, 10V 3V @ 250µA 20 nC @ 5 V - 710 pF @ 25 V - - - Through Hole
IP165R660CFD

IP165R660CFD

N-CHANNEL POWER MOSFET

Infineon Technologies

2393 0.00
- +

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Немедленный

IP165R660CFD

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
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