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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
HUF76633S3S

HUF76633S3S

MOSFET N-CH 100V 39A D2PAK

Fairchild Semiconductor

3159 0.00
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HUF76633S3S

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Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 39A (Tc) 4.5V, 10V 35mOhm @ 39A, 10V 3V @ 250µA 67 nC @ 10 V ±16V 1820 pF @ 25 V - 145W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDU8882

FDU8882

MOSFET N-CH 30V 12.6A/55A IPAK

Fairchild Semiconductor

2027 0.00
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FDU8882

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Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12.6A (Ta), 55A (Tc) 4.5V, 10V 11.5mOhm @ 35A, 10V 2.5V @ 250µA 33 nC @ 10 V ±20V 1260 pF @ 15 V - 55W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQI2N80TU

FQI2N80TU

MOSFET N-CH 800V 2.4A I2PAK

Fairchild Semiconductor

2657 0.00
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FQI2N80TU

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Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 800 V 2.4A (Tc) 10V 6.3Ohm @ 900mA, 10V 5V @ 250µA 15 nC @ 10 V ±30V 550 pF @ 25 V - 3.13W (Ta), 85W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF7N40

FQPF7N40

MOSFET N-CH 400V 4.6A TO220F

Fairchild Semiconductor

3206 0.00
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FQPF7N40

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Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 4.6A (Tc) 10V 800mOhm @ 2.3A, 10V 5V @ 250µA 22 nC @ 10 V ±30V 780 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
SSW4N60BTM

SSW4N60BTM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

2056 0.00
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SSW4N60BTM

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Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 2.5Ohm @ 2A, 10V 4V @ 250µA 29 nC @ 10 V ±30V 920 pF @ 25 V - 3.13W (Ta), 100W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BUK9Y13-60ELX

BUK9Y13-60ELX

SINGLE N-CHANNEL 60 V, 7.9 MOHM

Nexperia USA Inc.

2664 1.75
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BUK9Y13-60ELX

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Ta) 4.5V, 10V 7.9mOhm @ 20A, 10V 2.1V @ 1mA 81 nC @ 10 V ±10V 4520 pF @ 25 V - 147W (Ta) -55°C ~ 175°C (TJ) Surface Mount
RFP4N40

RFP4N40

N-CHANNEL POWER MOSFET

Harris Corporation

3151 0.00
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RFP4N40

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 4A (Tc) 10V 2Ohm @ 2A, 10V 4V @ 1mA - ±20V 750 pF @ 25 V - 60W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPA06N60C3IN

SPA06N60C3IN

N-CHANNEL POWER MOSFET

Infineon Technologies

3763 0.00
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Bulk * Active - - - - - - - - - - - - - -
BSC014NE2LSIATMA1

BSC014NE2LSIATMA1

MOSFET N-CH 25V 33A/100A TDSON

Infineon Technologies

10000 1.95
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BSC014NE2LSIATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 25 V 33A (Ta), 100A (Tc) 4.5V, 10V 1.4mOhm @ 30A, 10V 2V @ 250µA 39 nC @ 10 V ±20V 2700 pF @ 12 V - 2.5W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RH6G040BGTB1

RH6G040BGTB1

NCH 40V 95A, HSMT8, POWER MOSFET

Rohm Semiconductor

3364 1.87
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RH6G040BGTB1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 40A (Tc) 4.5V, 10V 3.6mOhm @ 40A, 10V 2.5V @ 1mA 25 nC @ 10 V ±20V 1580 pF @ 20 V - 59W (Tc) 150°C (TJ) Surface Mount
RJK0332DPB-01#J0

RJK0332DPB-01#J0

MOSFET N-CH 30V 35A LFPAK

Renesas Electronics America Inc

3531 0.87
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RJK0332DPB-01#J0

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 35A (Ta) 4.5V, 10V 4.7mOhm @ 17.5A, 10V 2.5V @ 1mA 14 nC @ 4.5 V ±20V 2180 pF @ 10 V - 45W (Tc) 150°C (TJ) Surface Mount
DMTH6004LPSQ-13

DMTH6004LPSQ-13

MOSFET N-CH 60V 100A PWRDI5060-8

Diodes Incorporated

3561 1.88
- +

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DMTH6004LPSQ-13

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Ta) 4.5V, 10V 3.1mOhm @ 25A, 10V 3V @ 250µA 47.4 nC @ 4.5 V ±20V 4515 pF @ 30 V - 2.6W (Ta), 138W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NVD6416ANLT4G-VF01

NVD6416ANLT4G-VF01

MOSFET N-CH 100V 19A DPAK-3

onsemi

3213 1.21
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NVD6416ANLT4G-VF01

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 100 V 19A (Tc) 4.5V, 10V 74mOhm @ 19A, 10V 2.2V @ 250µA 40 nC @ 10 V ±20V 1000 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQJ431AEP-T1_BE3

SQJ431AEP-T1_BE3

P-CHANNEL 200-V (D-S) 175C MOSFE

Vishay Siliconix

3382 1.72
- +

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SQJ431AEP-T1_BE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 200 V 9.4A (Tc) 6V, 10V 305mOhm @ 3.8A, 10V 3.5V @ 250µA 85 nC @ 10 V ±20V 3700 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NCV8440ASTT3G

NCV8440ASTT3G

MOSFET N-CH 59V 2.6A SOT223

onsemi

3269 1.00
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NCV8440ASTT3G

Datenblatt

Tape & Reel (TR),Cut Tape (CT),Bulk - Active N-Channel MOSFET (Metal Oxide) 59 V 2.6A (Ta) 3.5V, 10V 110mOhm @ 2.6A, 10V 1.9V @ 100µA 4.5 nC @ 4.5 V ±15V 155 pF @ 35 V - 1.69W (Ta) -55°C ~ 150°C (TJ) Surface Mount
RM80N150T2

RM80N150T2

MOSFET N-CH 150V 80A TO220-3

Rectron USA

2200 0.88
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Tube - Active N-Channel MOSFET (Metal Oxide) 150 V 80A (Tc) 10V 12.5mOhm @ 40A, 10V 4.5V @ 250µA - ±20V 3200 pF @ 75 V - 210W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFF323

IRFF323

N-CHANNEL POWER MOSFET

Harris Corporation

3194 0.52
- +

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Немедленный

Bulk * Active - - - - - - - - - - - - - -
HUF76419S3ST_NL

HUF76419S3ST_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

3371 0.00
- +

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Немедленный

HUF76419S3ST_NL

Datenblatt

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 60 V 29A (Tc) 4.5V, 10V 35mOhm @ 29A, 10V 3V @ 250µA 28 nC @ 10 V ±16V 900 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PJP4NA50A_T0_00001

PJP4NA50A_T0_00001

500V N-CHANNEL MOSFET

Panjit International Inc.

3273 0.88
- +

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Немедленный

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 4A (Ta) 10V 2.3Ohm @ 2A, 10V 4V @ 250µA 9.8 nC @ 10 V ±30V 449 pF @ 25 V - 90W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHLU024-GE3

SIHLU024-GE3

LOGIC MOSFET N-CHANNEL 60V

Vishay Siliconix

2252 0.88
- +

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Немедленный

SIHLU024-GE3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 14A (Tc) 4V, 5V 100mOhm @ 8.4A, 5V 2V @ 250µA 18 nC @ 5 V ±10V 870 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
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