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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
STW33N60M2

STW33N60M2

MOSFET N-CH 600V 26A TO247

STMicroelectronics

2631 6.02
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STW33N60M2

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Tube MDmesh™ II Plus Active N-Channel MOSFET (Metal Oxide) 600 V 26A (Tc) 10V 125mOhm @ 13A, 10V 4V @ 250µA 45.5 nC @ 10 V ±25V 1781 pF @ 100 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP35N60DM2

STP35N60DM2

MOSFET N-CH 600V 28A TO220

STMicroelectronics

2636 6.10
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STP35N60DM2

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Tube MDmesh™ DM2 Active N-Channel MOSFET (Metal Oxide) 600 V 28A (Tc) 10V 110mOhm @ 14A, 10V 5V @ 250µA 54 nC @ 10 V ±25V 2400 pF @ 100 V - 210W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW60R120P7XKSA1

IPW60R120P7XKSA1

MOSFET N-CH 600V 26A TO247-3

Infineon Technologies

3286 6.13
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IPW60R120P7XKSA1

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Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 26A (Tc) 10V 120mOhm @ 8.2A, 10V 4V @ 410µA 36 nC @ 10 V ±20V 1544 pF @ 400 V - 95W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW11NM80

STW11NM80

MOSFET N-CH 800V 11A TO247-3

STMicroelectronics

2523 6.16
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STW11NM80

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Tube MDmesh™ Active N-Channel MOSFET (Metal Oxide) 800 V 11A (Tc) 10V 400mOhm @ 5.5A, 10V 5V @ 250µA 43.6 nC @ 10 V ±30V 1630 pF @ 25 V - 150W (Tc) -65°C ~ 150°C (TJ) Through Hole
R6030ENX

R6030ENX

MOSFET N-CH 600V 30A TO220FM

Rohm Semiconductor

2757 6.17
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R6030ENX

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 130mOhm @ 14.5A, 10V 4V @ 1mA 85 nC @ 10 V ±30V 2100 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
IPP65R125C7XKSA1

IPP65R125C7XKSA1

MOSFET N-CH 650V 18A TO220-3

Infineon Technologies

2216 1.00
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IPP65R125C7XKSA1

Datenblatt

Bulk,Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Tc) 10V 125mOhm @ 8.9A, 10V 4V @ 440µA 35 nC @ 10 V ±20V 1670 pF @ 400 V - 101W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA50R140CPXKSA1

IPA50R140CPXKSA1

MOSFET N-CH 500V 23A TO220-FP

Infineon Technologies

2607 6.52
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IPA50R140CPXKSA1

Datenblatt

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 500 V 23A (Tc) 10V 140mOhm @ 14A, 10V 3.5V @ 930µA 64 nC @ 10 V ±20V 2540 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW40N65M2

STW40N65M2

MOSFET N-CH 650V 32A TO247

STMicroelectronics

2809 6.55
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STW40N65M2

Datenblatt

Tube MDmesh™ M2 Active N-Channel MOSFET (Metal Oxide) 650 V 32A (Tc) 10V 99mOhm @ 16A, 10V 4V @ 250µA 56.5 nC @ 10 V ±25V 2355 pF @ 100 V - 250W (Tc) 150°C (TJ) Through Hole
SIHG24N65EF-GE3

SIHG24N65EF-GE3

MOSFET N-CH 650V 24A TO247AC

Vishay Siliconix

3396 6.56
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SIHG24N65EF-GE3

Datenblatt

Tube E Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 156mOhm @ 12A, 10V 4V @ 250µA 122 nC @ 10 V ±30V 2774 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP38N65M5

STP38N65M5

MOSFET N-CH 650V 30A TO220

STMicroelectronics

2554 6.18
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STP38N65M5

Datenblatt

Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 95mOhm @ 15A, 10V 5V @ 250µA 71 nC @ 10 V ±25V 3000 pF @ 100 V - 190W (Tc) 150°C (TJ) Through Hole
NVMTS0D4N04CTXG

NVMTS0D4N04CTXG

MOSFET N-CH 40V 79.8A/558A 8DFNW

onsemi

2580 11.32
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NVMTS0D4N04CTXG

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 79.8A (Ta), 558A (Tc) 10V 0.45mOhm @ 50A, 10V 4V @ 250µA 251 nC @ 10 V ±20V 16500 pF @ 20 V - 5W -55°C ~ 175°C (TJ) Surface Mount
FCH104N60F

FCH104N60F

MOSFET N-CH 600V 37A TO247-3

onsemi

3238 6.24
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FCH104N60F

Datenblatt

Tube HiPerFET™, Polar™ Active N-Channel MOSFET (Metal Oxide) 600 V 37A (Tc) 10V 104mOhm @ 18.5A, 10V 5V @ 250µA 139 nC @ 10 V ±20V 5950 pF @ 100 V - 357W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP30N60E-GE3

SIHP30N60E-GE3

MOSFET N-CH 600V 29A TO220AB

Vishay Siliconix

2449 6.27
- +

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SIHP30N60E-GE3

Datenblatt

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 125mOhm @ 15A, 10V 4V @ 250µA 130 nC @ 10 V ±30V 2600 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA60R125P6XKSA1

IPA60R125P6XKSA1

MOSFET N-CH 600V 30A TO220-FP

Infineon Technologies

2533 1.00
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Немедленный

IPA60R125P6XKSA1

Datenblatt

Bulk,Tube CoolMOS™ P6 Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 125mOhm @ 11.6A, 10V 4.5V @ 960µA 56 nC @ 10 V ±20V 2660 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFA38N30X3

IXFA38N30X3

MOSFET N-CH 300V 38A TO263

IXYS

3319 6.29
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IXFA38N30X3

Datenblatt

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 300 V 38A (Tc) 10V 50mOhm @ 19A, 10V 4.5V @ 1mA 35 nC @ 10 V ±20V 2240 pF @ 25 V - 240W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHB24N65EF-GE3

SIHB24N65EF-GE3

MOSFET N-CH 650V 24A D2PAK

Vishay Siliconix

2997 6.30
- +

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Немедленный

SIHB24N65EF-GE3

Datenblatt

Tube E Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 156mOhm @ 12A, 10V 4V @ 250µA 122 nC @ 10 V ±30V 2774 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPW60R160C6FKSA1

IPW60R160C6FKSA1

MOSFET N-CH 600V 23.8A TO247-3

Infineon Technologies

3026 1.00
- +

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Немедленный

IPW60R160C6FKSA1

Datenblatt

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 23.8A (Tc) 10V 160mOhm @ 11.3A, 10V 3.5V @ 750µA 75 nC @ 10 V ±20V 1660 pF @ 100 V - 176W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOK095A60

AOK095A60

MOSFET N-CH 600V 38A TO247

Alpha & Omega Semiconductor Inc.

2139 6.56
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Tube aMOS5™ Active N-Channel MOSFET (Metal Oxide) 600 V 38A (Tc) 10V 95mOhm @ 19A, 10V 3V @ 250µA 78 nC @ 10 V ±20V 4010 pF @ 100 V - 378W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW60R125P6XKSA1

IPW60R125P6XKSA1

MOSFET N-CH 600V 30A TO247-3

Infineon Technologies

3615 1.00
- +

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Немедленный

IPW60R125P6XKSA1

Datenblatt

Bulk,Tube CoolMOS™ P6 Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 125mOhm @ 11.6A, 10V 4.5V @ 960µA 56 nC @ 10 V ±20V 2660 pF @ 100 V - 219W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCH067N65S3-F155

FCH067N65S3-F155

MOSFET N-CH 650V 44A TO247

onsemi

3661 6.62
- +

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Немедленный

FCH067N65S3-F155

Datenblatt

Tube SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 44A (Tc) 10V 67mOhm @ 22A, 10V 4.5V @ 4.4mA 78 nC @ 10 V ±30V 3090 pF @ 400 V Super Junction 312W (Tc) -55°C ~ 150°C (TJ) Through Hole
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