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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPB65R110CFDAATMA1

IPB65R110CFDAATMA1

MOSFET N-CH 650V 31.2A D2PAK

Infineon Technologies

3276 8.93
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IPB65R110CFDAATMA1

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Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 31.2A (Tc) 10V 110mOhm @ 12.7A, 10V 4.5V @ 1.3mA 118 nC @ 10 V ±20V 3240 pF @ 100 V - 277.8W (Tc) -40°C ~ 150°C (TJ) Surface Mount
SIHA120N60E-GE3

SIHA120N60E-GE3

MOSFET N-CH 600V 25A TO220

Vishay Siliconix

3534 5.50
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SIHA120N60E-GE3

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Bulk E Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 120mOhm @ 12A, 10V 5V @ 250µA 45 nC @ 10 V ±30V 1562 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP11NM60FD

STP11NM60FD

MOSFET N-CH 600V 11A TO220AB

STMicroelectronics

3839 5.56
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STP11NM60FD

Datenblatt

Tube FDmesh™ Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 450mOhm @ 5.5A, 10V 5V @ 250µA 40 nC @ 10 V ±30V 900 pF @ 25 V - 160W (Tc) - Through Hole
TK17N65W,S1F

TK17N65W,S1F

MOSFET N-CH 650V 17.3A TO247

Toshiba Semiconductor and Storage

2592 3.67
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TK17N65W,S1F

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Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 17.3A (Ta) 10V 200mOhm @ 8.7A, 10V 3.5V @ 900µA 45 nC @ 10 V ±30V 1800 pF @ 300 V - 165W (Tc) 150°C (TJ) Through Hole
IRFPG30PBF

IRFPG30PBF

MOSFET N-CH 1000V 3.1A TO247-3

Vishay Siliconix

3445 3.71
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IRFPG30PBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 1000 V 3.1A (Tc) 10V 5Ohm @ 1.9A, 10V 4V @ 250µA 80 nC @ 10 V ±20V 980 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
SQD40N10-25_GE3

SQD40N10-25_GE3

MOSFET N-CH 100V 40A TO252

Vishay Siliconix

2000 6.67
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SQD40N10-25_GE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 40A (Tc) 4.5V, 10V 25mOhm @ 40A, 10V 2.5V @ 250µA 70 nC @ 10 V ±20V 3380 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NVB072N65S3

NVB072N65S3

MOSFET N-CH 650V 44A D2PAK-3

onsemi

3448 1.00
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NVB072N65S3

Datenblatt

Tape & Reel (TR),Cut Tape (CT),Bulk Automotive, AEC-Q101, SuperFET® III, FRFET® Active N-Channel MOSFET (Metal Oxide) 650 V 44A (Tc) 10V 72mOhm @ 24A, 10V 4.5V @ 1mA 82 nC @ 10 V ±30V 330 pF @ 400 V - 312W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STF15N80K5

STF15N80K5

MOSFET N-CH 800V 14A TO220FP

STMicroelectronics

2906 5.65
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STF15N80K5

Datenblatt

Tube SuperMESH5™ Active N-Channel MOSFET (Metal Oxide) 800 V 14A (Tc) 10V 375mOhm @ 7A, 10V 5V @ 100µA 32 nC @ 10 V ±30V 1100 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP33N60DM6

STP33N60DM6

MOSFET N-CH 600V 25A TO220

STMicroelectronics

2188 5.65
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STP33N60DM6

Datenblatt

Tube MDmesh™ M6 Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 128mOhm @ 12.5A, 10V 4.75V @ 250µA 35 nC @ 10 V ±25V 1500 pF @ 100 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG17N80E-GE3

SIHG17N80E-GE3

MOSFET N-CH 800V 15A TO247AC

Vishay Siliconix

2219 5.67
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SIHG17N80E-GE3

Datenblatt

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 15A (Tc) 10V 290mOhm @ 8.5A, 10V 4V @ 250µA 122 nC @ 10 V ±30V 2408 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW27N60M2-EP

STW27N60M2-EP

MOSFET N-CH 600V 20A TO247-3

STMicroelectronics

2661 5.68
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STW27N60M2-EP

Datenblatt

Tube MDmesh™ M2-EP Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 163mOhm @ 10A, 10V 4.75V @ 250µA 33 nC @ 10 V ±25V 1320 pF @ 100 V - 170W (Tc) -55°C ~ 150°C (TJ) Through Hole
MSJP20N65-BP

MSJP20N65-BP

MOSFET N-CH TO220AB

Micro Commercial Co

2531 5.73
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MSJP20N65-BP

Datenblatt

Tube - Active - - - 20A (Tc) - - - - - - - - - Through Hole
FDP2710

FDP2710

MOSFET N-CH 250V 50A TO220-3

onsemi

800 4.53
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FDP2710

Datenblatt

Bulk,Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 250 V 50A (Tc) 10V 42.5mOhm @ 25A, 10V 5V @ 250µA 101 nC @ 10 V ±30V 7280 pF @ 25 V - 260W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF17N80K5

STF17N80K5

MOSFET N-CH 800V 14A TO220FP

STMicroelectronics

3999 5.80
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STF17N80K5

Datenblatt

Tube MDmesh™ K5 Active N-Channel MOSFET (Metal Oxide) 800 V 14A (Tc) 10V 340mOhm @ 7A, 10V 5V @ 250µA 26 nC @ 10 V ±30V 866 pF @ 100 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHB068N60EF-GE3

SIHB068N60EF-GE3

MOSFET N-CH 600V 41A D2PAK

Vishay Siliconix

2403 5.81
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SIHB068N60EF-GE3

Datenblatt

Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 41A (Tc) 10V 68mOhm @ 16A, 10V 5V @ 250µA 77 nC @ 10 V ±30V 2628 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB60R070CFD7ATMA1

IPB60R070CFD7ATMA1

MOSFET N-CH 650V 31A TO263-3-2

Infineon Technologies

2019 7.76
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IPB60R070CFD7ATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 31A (Tc) 10V 70mOhm @ 15.1A, 10V 4.5V @ 760µA 67 nC @ 10 V ±20V 2721 pF @ 400 V - 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STF23NM50N

STF23NM50N

MOSFET N-CH 500V 17A TO220FP

STMicroelectronics

2885 5.89
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STF23NM50N

Datenblatt

Tube MDmesh™ II Active N-Channel MOSFET (Metal Oxide) 500 V 17A (Tc) 10V 190mOhm @ 8.5A, 10V 4V @ 250µA 45 nC @ 10 V ±25V 1330 pF @ 50 V - 30W (Tc) 150°C (TJ) Through Hole
IPW60R190E6FKSA1

IPW60R190E6FKSA1

MOSFET N-CH 600V 20.2A TO247-3

Infineon Technologies

2369 5.14
- +

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IPW60R190E6FKSA1

Datenblatt

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 20.2A (Tc) 10V 190mOhm @ 9.5A, 10V 3.5V @ 630µA 63 nC @ 10 V ±20V 1400 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP24N65E-GE3

SIHP24N65E-GE3

MOSFET N-CH 650V 24A TO220AB

Vishay Siliconix

3189 5.98
- +

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Немедленный

SIHP24N65E-GE3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 145mOhm @ 12A, 10V 4V @ 250µA 122 nC @ 10 V ±30V 2740 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOK27S60L

AOK27S60L

MOSFET N-CH 600V 27A TO247

Alpha & Omega Semiconductor Inc.

2840 6.02
- +

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Немедленный

AOK27S60L

Datenblatt

Tube aMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 27A (Tc) 10V 160mOhm @ 13.5A, 10V 4V @ 250µA 26 nC @ 10 V ±30V 1294 pF @ 100 V - 357W (Tc) -55°C ~ 150°C (TJ) Through Hole
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