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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FQU3N40TU

FQU3N40TU

MOSFET N-CH 400V 2A IPAK

Fairchild Semiconductor

2877 0.53
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FQU3N40TU

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Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 2A (Tc) 10V 3.4Ohm @ 1A, 10V 5V @ 250µA 7.5 nC @ 10 V ±30V 230 pF @ 25 V - 2.5W (Ta), 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQI5N30TU

FQI5N30TU

MOSFET N-CH 300V 5.4A I2PAK

Fairchild Semiconductor

2849 0.53
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FQI5N30TU

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Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 300 V 5.4A (Tc) 10V 900mOhm @ 2.7A, 10V 5V @ 250µA 13 nC @ 10 V ±30V 430 pF @ 25 V - 3.13W (Ta), 70W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFP8N20

RFP8N20

N-CHANNEL POWER MOSFET

Harris Corporation

2366 0.53
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RFP8N20

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Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 8A (Tc) 10V 500mOhm @ 4A, 10V 4V @ 1mA - ±20V 750 pF @ 25 V - 60W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF5N50

FQPF5N50

MOSFET N-CH 500V 3A TO220F

Fairchild Semiconductor

1999 0.53
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FQPF5N50

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Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 3A (Tc) 10V 1.8Ohm @ 1.5A, 10V 5V @ 250µA 17 nC @ 10 V ±30V 610 pF @ 25 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQD16N15TM

FQD16N15TM

MOSFET N-CH 150V 11.8A DPAK

Fairchild Semiconductor

1947 0.53
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FQD16N15TM

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Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 11.8A (Tc) 10V 160mOhm @ 5.9A, 10V 4V @ 250µA 30 nC @ 10 V ±25V 910 pF @ 25 V - 2.5W (Ta), 55W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RJK0352DSP-WS#J0

RJK0352DSP-WS#J0

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

1850 0.53
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Bulk * Active - - - - - - - - - - - - - -
FQP2NA90

FQP2NA90

MOSFET N-CH 900V 2.8A TO220-3

Fairchild Semiconductor

1789 0.53
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FQP2NA90

Datenblatt

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 900 V 2.8A (Tc) 10V 5.8Ohm @ 1.4A, 10V 5V @ 250µA 20 nC @ 10 V ±30V 680 pF @ 25 V - 107W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDP5N50

FDP5N50

MOSFET N-CH 500V 5A TO220-3

Fairchild Semiconductor

1761 0.53
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FDP5N50

Datenblatt

Tube UniFET™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.4Ohm @ 2.5A, 10V 5V @ 250µA 15 nC @ 10 V ±30V 640 pF @ 25 V - 85W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDPF12N35

FDPF12N35

MOSFET N-CH 350V 12A TO220F

Fairchild Semiconductor

1458 0.53
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FDPF12N35

Datenblatt

Tube UniFET™ Obsolete N-Channel MOSFET (Metal Oxide) 350 V 12A (Tc) 10V 380mOhm @ 6A, 10V 5V @ 250µA 25 nC @ 10 V ±30V 1110 pF @ 25 V - 31.3W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF19N10L

FQPF19N10L

MOSFET N-CH 100V 13.6A TO220F

Fairchild Semiconductor

1448 0.53
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FQPF19N10L

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Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 13.6A (Tc) 5V, 10V 100mOhm @ 6.8A, 10V 2V @ 250µA 18 nC @ 5 V ±20V 870 pF @ 25 V - 38W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF626

IRF626

N-CHANNEL POWER MOSFET

Harris Corporation

997 0.53
- +

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IRF626

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 275 V 3.8A (Tc) 10V 1.1Ohm @ 1.4A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 340 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF6N40CT

FQPF6N40CT

MOSFET N-CH 400V 6A TO220F

Fairchild Semiconductor

680 0.53
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FQPF6N40CT

Datenblatt

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 6A (Tc) 10V 1Ohm @ 3A, 10V 4V @ 250µA 20 nC @ 10 V ±30V 625 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF3709SPBF

IRF3709SPBF

HEXFET SMPS POWER MOSFET

International Rectifier

594 0.53
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IRF3709SPBF

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 41 nC @ 5 V ±20V 2672 pF @ 16 V - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPS70R600P7SAKMA1

IPS70R600P7SAKMA1

MOSFET N-CH 700V 8.5A TO251-3

Infineon Technologies

842 1.08
- +

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IPS70R600P7SAKMA1

Datenblatt

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V 8.5A (Tc) 10V 600mOhm @ 1.8A, 10V 3.5V @ 90µA 10.5 nC @ 10 V ±16V 364 pF @ 400 V - 43W (Tc) -40°C ~ 150°C (TJ) Through Hole
IRF830B

IRF830B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

9803 0.54
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IRF830B

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 4.5A (Tc) 10V 1.5Ohm @ 2.25A, 10V 4V @ 250µA 35 nC @ 10 V ±30V 1050 pF @ 25 V - 73W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHA6N65E-GE3

SIHA6N65E-GE3

N-CHANNEL 650V

Vishay Siliconix

1000 2.14
- +

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SIHA6N65E-GE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) E Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 600mOhm @ 3A, 10V 4V @ 250µA 48 nC @ 10 V ±30V 1640 pF @ 100 V - 31W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDS8874

FDS8874

MOSFET N-CH 30V 16A 8SOIC

Fairchild Semiconductor

4011 0.54
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FDS8874

Datenblatt

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 16A (Ta) 4.5V, 10V 5.5mOhm @ 16A, 10V 2.5V @ 250µA 72 nC @ 10 V ±20V 3990 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQD60N03LTM

FQD60N03LTM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

10000 0.55
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FQD60N03LTM

Datenblatt

Bulk QFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 5V, 10V 23mOhm @ 30A, 10V 3V @ 250µA 46 nC @ 10 V ±16V 900 pF @ 15 V - 45W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTB6N60

NTB6N60

N-CHANNEL POWER MOSFET

onsemi

9939 0.55
- +

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Немедленный

NTB6N60

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
HAT2054M-EL-E

HAT2054M-EL-E

MOSFET N-CH 30V 6.3A 6TSOP

Renesas Electronics America Inc

8893 0.55
- +

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Немедленный

HAT2054M-EL-E

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 6.3A (Ta) - 31mOhm @ 3A, 10V 2.5V @ 1mA - ±20V 620 pF @ 10 V - 1.05W (Ta) 150°C Surface Mount
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