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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FQI17N08TU

FQI17N08TU

MOSFET N-CH 80V 16.5A I2PAK

Fairchild Semiconductor

1354 0.51
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FQI17N08TU

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Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 16.5A (Tc) 10V 115mOhm @ 8.25A, 10V 4V @ 250µA 15 nC @ 10 V ±25V 450 pF @ 25 V - 3.13W (Ta), 65W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP60R750E6

IPP60R750E6

N-CHANNEL POWER MOSFET

Infineon Technologies

1021 0.51
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IPP60R750E6

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
FQI17P10TU

FQI17P10TU

P-CHANNEL POWER MOSFET

Fairchild Semiconductor

1000 0.51
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FQI17P10TU

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Bulk QFET™ Active P-Channel MOSFET (Metal Oxide) 100 V 16.5A (Tc) 10V 190mOhm @ 8.25A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 3.75W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSO203SPNT

BSO203SPNT

P-CHANNEL POWER MOSFET

Infineon Technologies

900 0.51
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BSO203SPNT

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
IRFU1018EPBF

IRFU1018EPBF

MOSFET N-CH 60V 56A IPAK

International Rectifier

763 0.51
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IRFU1018EPBF

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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 56A (Tc) - 8.4mOhm @ 47A, 10V 4V @ 100µA 69 nC @ 10 V ±20V 2290 pF @ 50 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQU1N60TU

FQU1N60TU

MOSFET N-CH 600V 1A IPAK

Fairchild Semiconductor

607 0.51
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FQU1N60TU

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Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 1A (Tc) 10V 11.5Ohm @ 500mA, 10V 5V @ 250µA 6 nC @ 10 V ±30V 150 pF @ 25 V - 2.5W (Ta), 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQB11N40TM

FQB11N40TM

MOSFET N-CH 400V 11.4A D2PAK

Fairchild Semiconductor

8000 0.52
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FQB11N40TM

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Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 11.4A (Tc) 10V 480mOhm @ 5.7A, 10V 5V @ 250µA 35 nC @ 10 V ±30V 1400 pF @ 25 V - 3.13W (Ta), 147W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLR210ATM

IRLR210ATM

MOSFET N-CH 200V 2.7A DPAK

Fairchild Semiconductor

7500 0.52
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IRLR210ATM

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Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 2.7A (Tc) 5V 1.5Ohm @ 1.35A, 5V 2V @ 250µA 9 nC @ 5 V ±20V 240 pF @ 25 V - 2.5W (Ta), 21W (Tc) -55°C ~ 150°C (TJ) Surface Mount
HUF75637P3

HUF75637P3

MOSFET N-CH 100V 44A TO220-3

Fairchild Semiconductor

5595 0.52
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HUF75637P3

Datenblatt

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 44A (Tc) 10V 30mOhm @ 44A, 10V 4V @ 250µA 108 nC @ 20 V ±20V 1700 pF @ 25 V - 155W (Tc) -55°C ~ 175°C (TJ) Through Hole
ISL9N327AD3ST

ISL9N327AD3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

5000 0.52
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ISL9N327AD3ST

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Bulk UltraFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) 4.5V, 10V 27mOhm @ 20A, 10V 3V @ 250µA 26 nC @ 10 V ±20V 910 pF @ 15 V - 50W (Ta) -55°C ~ 175°C (TJ) Surface Mount
NDS9400

NDS9400

P-CHANNEL POWER MOSFET

Fairchild Semiconductor

5000 0.52
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NDS9400

Datenblatt

Bulk - Active P-Channel MOSFET (Metal Oxide) - 2.5A - - - - - - - 2W - Surface Mount
NTB8N50

NTB8N50

N-CHANNEL POWER MOSFET

onsemi

4250 0.52
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NTB8N50

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Bulk * Active - - - - - - - - - - - - - -
AUIRFC8407TR

AUIRFC8407TR

AUTOMOTIVE POWER MOSFET

Infineon Technologies

2064 0.52
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Bulk * Active - - - - - - - - - - - - - -
SPD30N03S2L-07 G

SPD30N03S2L-07 G

N-CHANNEL POWER MOSFET

Infineon Technologies

1757 0.52
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SPD30N03S2L-07 G

Datenblatt

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 6.7mOhm @ 30A, 10V 2V @ 85µA 68 nC @ 10 V ±20V 2530 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RF1S45N02L

RF1S45N02L

45A, 20V, 0.022OHM, N-CHANNEL LO

Harris Corporation

999 0.52
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RF1S45N02L

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 20 V 45A (Tc) 5V 22mOhm @ 45A, 5V 2V @ 250µA 60 nC @ 10 V ±10V 1300 pF @ 15 V - 90W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF76009P3

HUF76009P3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

7513 0.53
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HUF76009P3

Datenblatt

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 20 V 20A (Tc) 5V, 10V 27mOhm @ 20A, 10V 3V @ 250µA 13 nC @ 10 V ±20V 470 pF @ 20 V - 41W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDU6296

FDU6296

MOSFET N-CH 30V 15A/50A IPAK

Fairchild Semiconductor

7413 0.53
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FDU6296

Datenblatt

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta), 50A (Tc) 4.5V, 10V 8.8mOhm @ 15A, 10V 3V @ 250µA 31.5 nC @ 10 V ±20V 1440 pF @ 15 V - 3.8W (Ta), 52W (Tc) -55°C ~ 175°C (TJ) Through Hole
RFP4N05

RFP4N05

N-CHANNEL POWER MOSFET

Harris Corporation

6728 0.53
- +

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RFP4N05

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 50 V 4A (Tc) 10V 800mOhm @ 4A, 10V 4V @ 250µA - ±20V 200 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
RJK03M8DNS-WS#J5

RJK03M8DNS-WS#J5

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

4880 0.53
- +

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Bulk * Active - - - - - - - - - - - - - -
FQD3N60TF

FQD3N60TF

MOSFET N-CH 600V 2.4A DPAK

Fairchild Semiconductor

3256 0.53
- +

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Немедленный

FQD3N60TF

Datenblatt

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2.4A (Tc) 10V 3.6Ohm @ 1.2A, 10V 5V @ 250µA 13 nC @ 10 V ±30V 450 pF @ 25 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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