Добро пожаловать Element Technology Co., Ltd.!

+86 15361839241 +86 0755-23603516
Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SSI7N60BTU

SSI7N60BTU

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

964 0.36
- +

Добавить

Немедленный

SSI7N60BTU

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 1.2Ohm @ 3.5A, 10V 4V @ 250µA 50 nC @ 10 V ±30V 1800 pF @ 25 V - 3.13W (Ta), 147W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU322

IRFU322

N-CHANNEL POWER MOSFET

Harris Corporation

898 0.36
- +

Добавить

Немедленный

IRFU322

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 2.6A (Ta) 10V 2.5Ohm @ 1.7A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 350 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU130ATU

IRFU130ATU

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

8698 0.37
- +

Добавить

Немедленный

IRFU130ATU

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 13A (Tc) 10V 110mOhm @ 6.5A, 10V 4V @ 250µA 36 nC @ 10 V ±20V 790 pF @ 25 V - 2.5W (Ta), 41W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDD8750

FDD8750

MOSFET N-CH 25V 6.5A/2.7A DPAK

Fairchild Semiconductor

8245 0.37
- +

Добавить

Немедленный

FDD8750

Datenblatt

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 6.5A (Ta), 2.7A (Tc) 4.5V, 10V 40mOhm @ 2.7A, 10V 2.5V @ 250µA 9 nC @ 10 V ±20V 425 pF @ 13 V - 3.7W (Ta), 18W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQD5N30TF

FQD5N30TF

MOSFET N-CH 300V 4.4A DPAK

Fairchild Semiconductor

6905 0.37
- +

Добавить

Немедленный

FQD5N30TF

Datenblatt

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 300 V 4.4A (Tc) 10V 900mOhm @ 2.2A, 10V 5V @ 250µA 13 nC @ 10 V ±30V 430 pF @ 25 V - 2.5W (Ta), 45W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQI11P06TU

FQI11P06TU

MOSFET P-CH 60V 11.4A I2PAK

Fairchild Semiconductor

5955 0.37
- +

Добавить

Немедленный

FQI11P06TU

Datenblatt

Tube QFET® Obsolete P-Channel MOSFET (Metal Oxide) 60 V 11.4A (Tc) 10V 175mOhm @ 5.7A, 10V 4V @ 250µA 17 nC @ 10 V ±25V 550 pF @ 25 V - 3.13W (Ta), 53W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK7507-30B,127

BUK7507-30B,127

PFET, 75A I(D), 30V, 0.007OHM, 1

NXP USA Inc.

4611 0.37
- +

Добавить

Немедленный

BUK7507-30B,127

Datenblatt

Tube TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 10V 7mOhm @ 25A, 10V 4V @ 1mA 36 nC @ 10 V ±20V 2427 pF @ 25 V - 157W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK7516-55A,127

BUK7516-55A,127

PFET, 65.7A I(D), 55V, 0.016OHM

NXP USA Inc.

4353 4353.00
- +

Добавить

Немедленный

BUK7516-55A,127

Datenblatt

Tube TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 65.7A (Tc) 10V 16mOhm @ 25A, 10V 4V @ 1mA - ±20V 2245 pF @ 25 V - 138W (Tc) -55°C ~ 175°C (TJ)
FQB3P20TM

FQB3P20TM

MOSFET P-CH 200V 2.8A D2PAK

Fairchild Semiconductor

3877 0.37
- +

Добавить

Немедленный

FQB3P20TM

Datenblatt

Bulk QFET® Obsolete P-Channel MOSFET (Metal Oxide) 200 V 2.8A (Tc) 10V 2.7Ohm @ 1.4A, 10V 5V @ 250µA 8 nC @ 10 V ±30V 250 pF @ 25 V - 3.13W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
ISL9N310AD3

ISL9N310AD3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

3028 0.37
- +

Добавить

Немедленный

ISL9N310AD3

Datenblatt

Bulk UltraFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 35A (Tc) 4.5V, 10V 10Ohm @ 35A, 10A 3V @ 250µA 48 nC @ 10 V ±20V 1800 pF @ 15 V - 70W (Ta) -55°C ~ 175°C (TJ) Through Hole
FQI5P10TU

FQI5P10TU

MOSFET P-CH 100V 4.5A I2PAK

Fairchild Semiconductor

3000 0.37
- +

Добавить

Немедленный

FQI5P10TU

Datenblatt

Tube QFET® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 4.5A (Tc) 10V 1.05Ohm @ 2.25A, 10V 4V @ 250µA 8.2 nC @ 10 V ±30V 250 pF @ 25 V - 3.75W (Ta), 40W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQPF2P25

FQPF2P25

MOSFET P-CH 250V 1.8A TO220F

Fairchild Semiconductor

2391 0.37
- +

Добавить

Немедленный

FQPF2P25

Datenblatt

Tube QFET® Obsolete P-Channel MOSFET (Metal Oxide) 250 V 1.8A (Tc) 10V 4Ohm @ 900mA, 10V 5V @ 250µA 8.5 nC @ 10 V ±30V 250 pF @ 25 V - 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQP19N10L

FQP19N10L

MOSFET N-CH 100V 19A TO220-3

Fairchild Semiconductor

2071 0.37
- +

Добавить

Немедленный

FQP19N10L

Datenblatt

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 19A (Tc) 5V, 10V 100mOhm @ 9.5A, 10V 2V @ 250µA 18 nC @ 5 V ±20V 870 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQI17N08LTU

FQI17N08LTU

MOSFET N-CH 80V 16.5A I2PAK

Fairchild Semiconductor

2000 0.37
- +

Добавить

Немедленный

FQI17N08LTU

Datenblatt

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 16.5A (Tc) 5V, 10V 100mOhm @ 8.25A, 10V 2V @ 250µA 11.5 nC @ 5 V ±20V 520 pF @ 25 V - 3.75W (Ta), 65W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQD5N30TM

FQD5N30TM

MOSFET N-CH 300V 4.4A DPAK

Fairchild Semiconductor

1623 0.37
- +

Добавить

Немедленный

FQD5N30TM

Datenblatt

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 300 V 4.4A (Tc) 10V 900mOhm @ 2.2A, 10V 5V @ 250µA 13 nC @ 10 V ±30V 430 pF @ 25 V - 2.5W (Ta), 45W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQB20N06TM

FQB20N06TM

MOSFET N-CH 60V 20A D2PAK

Fairchild Semiconductor

1550 0.37
- +

Добавить

Немедленный

FQB20N06TM

Datenblatt

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 10V 60mOhm @ 10A, 10V 4V @ 250µA 15 nC @ 10 V ±25V 590 pF @ 25 V - 3.75W (Ta), 53W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQB3N40TM

FQB3N40TM

MOSFET N-CH 400V 2.5A D2PAK

Fairchild Semiconductor

1490 0.37
- +

Добавить

Немедленный

FQB3N40TM

Datenblatt

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 2.5A (Tc) 10V 3.4Ohm @ 1.25A, 10V 5V @ 250µA 7.5 nC @ 10 V ±30V 230 pF @ 25 V - 3.13W (Ta), 55W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQP3N50C

FQP3N50C

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

1362 0.37
- +

Добавить

Немедленный

FQP3N50C

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 3A (Tc) 10V 2.5Ohm @ 1.5A, 10V 4V @ 250µA 13 nC @ 10 V ±30V 365 pF @ 25 V - 62W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQI10N20CTU

FQI10N20CTU

MOSFET N-CH 200V 9.5A I2PAK

Fairchild Semiconductor

1055 0.37
- +

Добавить

Немедленный

FQI10N20CTU

Datenblatt

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9.5A (Tc) 10V 360mOhm @ 4.75A, 10V 4V @ 250µA 26 nC @ 10 V ±30V 510 pF @ 25 V - 72W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF8P10

FQPF8P10

MOSFET P-CH 100V 5.3A TO220F

Fairchild Semiconductor

860 0.37
- +

Добавить

Немедленный

FQPF8P10

Datenblatt

Tube QFET® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 5.3A (Tc) 10V 530mOhm @ 2.65A, 10V 4V @ 250µA 15 nC @ 10 V ±30V 470 pF @ 25 V - 28W (Tc) -55°C ~ 175°C (TJ) Through Hole
Total 42446 Records«Prev1... 332333334335336337338339...2123Next»
Запрос котировок
Номер запчасти
А
Связь
Электронная почта
Замечания
  • Домой

    Домой

    Продукты

    Продукты

    Телефон

    Телефон

    Пользователи

    Пользователи