Добро пожаловать Element Technology Co., Ltd.!

+86 15361839241 +86 0755-23603516
Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF523

IRF523

N-CHANNEL POWER MOSFET

Harris Corporation

2608 0.33
- +

Добавить

Немедленный

IRF523

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 80 V 8A (Tc) 10V 360mOhm @ 5.6A, 10V 4V @ 250µA 15 nC @ 10 V ±20V 350 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK7E13-60E,127

BUK7E13-60E,127

MOSFET N-CH 60V 58A I2PAK

NXP USA Inc.

1470 0.33
- +

Добавить

Немедленный

BUK7E13-60E,127

Datenblatt

Tube Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 58A (Ta) - 13mOhm @ 15A, 10V 4V @ 1mA 22.9 nC @ 10 V ±20V 1730 pF @ 25 V - 96W (Ta) -55°C ~ 175°C (TJ) Through Hole
HUF75925D3ST

HUF75925D3ST

MOSFET N-CH 200V 11A TO252AA

Fairchild Semiconductor

1131 0.33
- +

Добавить

Немедленный

HUF75925D3ST

Datenblatt

Bulk UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 200 V 11A (Tc) 10V 275mOhm @ 11A, 10V 4V @ 250µA 78 nC @ 20 V ±20V 1030 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RFP14N06L

RFP14N06L

N-CHANNEL POWER MOSFET

Harris Corporation

1085 0.33
- +

Добавить

Немедленный

Bulk * Active - - - - - - - - - - - - - -
IRF8113GPBF

IRF8113GPBF

MOSFET N-CH 30V 17.2A 8SO

International Rectifier

950 0.33
- +

Добавить

Немедленный

IRF8113GPBF

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 17.2A (Ta) 4.5V, 10V 5.6mOhm @ 17.2A, 10V 2.2V @ 250µA 36 nC @ 4.5 V ±20V 2910 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SSP2N60A

SSP2N60A

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

9000 0.34
- +

Добавить

Немедленный

SSP2N60A

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 2A (Tc) 10V 5Ohm @ 1A, 10V 4V @ 250µA 21 nC @ 10 V ±30V 410 pF @ 25 V - 54W (Tc) -55°C ~ 150°C (TJ) Through Hole
ISL9N306AD3ST

ISL9N306AD3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

8371 0.34
- +

Добавить

Немедленный

ISL9N306AD3ST

Datenblatt

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 6mOhm @ 50A, 10V 3V @ 250µA 90 nC @ 10 V ±20V 3400 pF @ 15 V - 125W (Ta) -55°C ~ 175°C (TJ) Surface Mount
FQP630

FQP630

MOSFET N-CH 200V 9A TO220-3

Fairchild Semiconductor

5961 0.34
- +

Добавить

Немедленный

FQP630

Datenblatt

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9A (Tc) 10V 400mOhm @ 4.5A, 10V 4V @ 250µA 25 nC @ 10 V ±25V 550 pF @ 25 V - 78W (Tc) -55°C ~ 150°C (TJ) Through Hole
HS54095-01-E

HS54095-01-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

5500 0.34
- +

Добавить

Немедленный

Bulk * Active - - - - - - - - - - - - - -
UPA2762UGR-E1-AT

UPA2762UGR-E1-AT

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

5000 0.34
- +

Добавить

Немедленный

Bulk * Active - - - - - - - - - - - - - -
FQPF5P10

FQPF5P10

MOSFET P-CH 100V 2.9A TO220F

Fairchild Semiconductor

4443 0.34
- +

Добавить

Немедленный

FQPF5P10

Datenblatt

Tube QFET® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 2.9A (Tc) 10V 1.05Ohm @ 1.45A, 10V 4V @ 250µA 8.2 nC @ 10 V ±30V 250 pF @ 25 V - 23W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SK681A-AZ

2SK681A-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

4181 0.34
- +

Добавить

Немедленный

2SK681A-AZ

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
FQPF5N20L

FQPF5N20L

MOSFET N-CH 200V 3.5A TO220F

Fairchild Semiconductor

3834 0.34
- +

Добавить

Немедленный

FQPF5N20L

Datenblatt

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 3.5A (Tc) 5V, 10V 1.2Ohm @ 1.75A, 10V 2V @ 250µA 6.2 nC @ 5 V ±20V 325 pF @ 25 V - 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
RJK03M6DNS-WS#J5

RJK03M6DNS-WS#J5

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

3610 0.34
- +

Добавить

Немедленный

Bulk * Active - - - - - - - - - - - - - -
MTP4N40E

MTP4N40E

N-CHANNEL POWER MOSFET

onsemi

2983 0.34
- +

Добавить

Немедленный

MTP4N40E

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
FQPF17N08

FQPF17N08

MOSFET N-CH 80V 11.2A TO220F

Fairchild Semiconductor

2970 0.34
- +

Добавить

Немедленный

FQPF17N08

Datenblatt

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 11.2A (Tc) 10V 115mOhm @ 5.6A, 10V 4V @ 250µA 15 nC @ 10 V ±25V 450 pF @ 25 V - 30W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFR121

IRFR121

N-CHANNEL POWER MOSFET

Harris Corporation

2880 0.34
- +

Добавить

Немедленный

IRFR121

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 80 V 8.4A - - - - - - - - - Surface Mount
SFS9Z34

SFS9Z34

P-CHANNEL POWER MOSFET

Fairchild Semiconductor

2772 0.34
- +

Добавить

Немедленный

SFS9Z34

Datenblatt

Bulk - Active P-Channel MOSFET (Metal Oxide) 60 V 12A (Tc) 10V 140mOhm @ 6A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1155 pF @ 25 V - 36W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFW640BTM

IRFW640BTM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

2753 0.34
- +

Добавить

Немедленный

IRFW640BTM

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 180mOhm @ 9A, 10V 4V @ 250µA 58 nC @ 10 V ±30V 1700 pF @ 25 V - 3.13W (Ta) -55°C ~ 150°C (TJ) Surface Mount
RFD14N06LSM9A

RFD14N06LSM9A

N-CHANNEL POWER MOSFET

Harris Corporation

2500 0.34
- +

Добавить

Немедленный

RFD14N06LSM9A

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
Total 42446 Records«Prev1... 330331332333334335336337...2123Next»
Запрос котировок
Номер запчасти
А
Связь
Электронная почта
Замечания
  • Домой

    Домой

    Продукты

    Продукты

    Телефон

    Телефон

    Пользователи

    Пользователи