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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FCD600N60Z

FCD600N60Z

MOSFET N-CH 600V 7.4A DPAK

onsemi

3914 1.66
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FCD600N60Z

Datenblatt

Tape & Reel (TR),Cut Tape (CT) SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 7.4A (Tc) 10V 600mOhm @ 3.7A, 10V 3.5V @ 250µA 26 nC @ 10 V ±20V 1120 pF @ 25 V - 89W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TPHR9003NL1,LQ

TPHR9003NL1,LQ

UMOS9 SOP-ADV(N) PD=78W F=1MHZ

Toshiba Semiconductor and Storage

14367 1.69
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Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 30 V 150A (Tc) 4.5V, 10V 0.9mOhm @ 50A, 10V 2.3V @ 1mA 74 nC @ 10 V ±20V 6900 pF @ 15 V - 800mW (Ta), 170W (Tc) 150°C Surface Mount
IAUC100N04S6L014ATMA1

IAUC100N04S6L014ATMA1

IAUC100N04S6L014ATMA1

Infineon Technologies

14975 1.63
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IAUC100N04S6L014ATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 4.5V, 10V 1.4mOhm @ 50A, 10V 2V @ 50µA 65 nC @ 10 V ±16V 3935 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC025N03LSGATMA1

BSC025N03LSGATMA1

MOSFET N-CH 30V 25A/100A TDSON

Infineon Technologies

23724 1.65
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BSC025N03LSGATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 25A (Ta), 100A (Tc) 4.5V, 10V 2.5mOhm @ 30A, 10V 2.2V @ 250µA 74 nC @ 10 V ±20V 6100 pF @ 15 V - 2.5W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLR2905TRPBF

IRLR2905TRPBF

MOSFET N-CH 55V 42A DPAK

Infineon Technologies

83901 1.66
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IRLR2905TRPBF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 4V, 10V 27mOhm @ 25A, 10V 2V @ 250µA 48 nC @ 5 V ±16V 1700 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR2905TRLPBF

IRLR2905TRLPBF

MOSFET N-CH 55V 42A DPAK

Infineon Technologies

2995 1.66
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IRLR2905TRLPBF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 4V, 10V 27mOhm @ 25A, 10V 2V @ 250µA 48 nC @ 5 V ±16V 1700 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD60R400CEAUMA1

IPD60R400CEAUMA1

MOSFET N-CH 600V 14.7A TO252

Infineon Technologies

7429 1.67
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IPD60R400CEAUMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CE Active N-Channel MOSFET (Metal Oxide) 600 V 14.7A (Tc) 10V 400mOhm @ 3.8A, 10V 3.5V @ 300µA 32 nC @ 10 V ±20V 700 pF @ 100 V - 112W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRFR3504ZTRPBF

IRFR3504ZTRPBF

MOSFET N-CH 40V 42A DPAK

Infineon Technologies

7922 1.67
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IRFR3504ZTRPBF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) 10V 9mOhm @ 42A, 10V 4V @ 250µA 45 nC @ 10 V ±20V 1510 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD036N04LGATMA1

IPD036N04LGATMA1

MOSFET N-CH 40V 90A TO252-31

Infineon Technologies

23414 1.67
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IPD036N04LGATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 3 Active N-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 4.5V, 10V 3.6mOhm @ 90A, 10V 2V @ 45µA 78 nC @ 10 V ±20V 6300 pF @ 20 V - 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR2908TRPBF

IRLR2908TRPBF

MOSFET N-CH 80V 30A DPAK

Infineon Technologies

40592 1.67
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IRLR2908TRPBF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 80 V 30A (Tc) 4.5V, 10V 28mOhm @ 23A, 10V 2.5V @ 250µA 33 nC @ 4.5 V ±16V 1890 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TPH2R608NH,L1Q

TPH2R608NH,L1Q

MOSFET N-CH 75V 150A 8SOP

Toshiba Semiconductor and Storage

69968 1.74
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TPH2R608NH,L1Q

Datenblatt

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 75 V 150A (Tc) 10V 2.6mOhm @ 50A, 10V 4V @ 1mA 72 nC @ 10 V ±20V 6000 pF @ 37.5 V - 142W (Tc) 150°C (TJ) Surface Mount
BSC018NE2LSATMA1

BSC018NE2LSATMA1

MOSFET N-CH 25V 29A/100A TDSON

Infineon Technologies

10000 1.68
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BSC018NE2LSATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 25 V 29A (Ta), 100A (Tc) 4.5V, 10V 1.8mOhm @ 30A, 10V 2V @ 250µA 39 nC @ 10 V ±20V 2800 pF @ 12 V - 2.5W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
CSD23203WT

CSD23203WT

MOSFET P-CH 8V 3A 6DSBGA

Texas Instruments

32433 1.15
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CSD23203WT

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Tape & Reel (TR),Cut Tape (CT) NexFET™ Active P-Channel MOSFET (Metal Oxide) 8 V 3A (Ta) 1.8V, 4.5V 19.4mOhm @ 1.5A, 4.5V 1.1V @ 250µA 6.3 nC @ 4.5 V -6V 914 pF @ 4 V - 750mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSC026NE2LS5ATMA1

BSC026NE2LS5ATMA1

MOSFET N-CH 25V 24A/82A TDSON

Infineon Technologies

8520 1.70
- +

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Немедленный

BSC026NE2LS5ATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 25 V 24A (Ta), 82A (Tc) 4.5V, 10V 2.6mOhm @ 30A, 10V 2V @ 250µA 16 nC @ 10 V ±16V 1100 pF @ 12 V - 2.5W (Ta), 29W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD60R600P7ATMA1

IPD60R600P7ATMA1

MOSFET N-CH 650V 6A TO252-3

Infineon Technologies

4992 1.71
- +

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Немедленный

IPD60R600P7ATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 650 V 6A (Tc) 10V 600mOhm @ 1.7A, 10V 4V @ 80µA 9 nC @ 10 V ±20V 363 pF @ 400 V - 30W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFH7446TRPBF

IRFH7446TRPBF

MOSFET N-CH 40V 85A 8PQFN

Infineon Technologies

28691 1.72
- +

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IRFH7446TRPBF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 85A (Tc) 6V, 10V 3.3mOhm @ 50A, 10V 3.9V @ 100µA 98 nC @ 10 V ±20V 3174 pF @ 25 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTBGS6D5N15MC

NTBGS6D5N15MC

MOSFET N-CH 150V 15A/121A D2PAK

onsemi

2357 6.58
- +

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NTBGS6D5N15MC

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 150 V 15A (Ta), 121A (Tc) 8V, 10V 7mOhm @ 69A, 10V 4.5V @ 379µA 57 nC @ 10 V ±20V 4745 pF @ 75 V - 3.7W (Ta), 238W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP320N20N3GXKSA1

IPP320N20N3GXKSA1

MOSFET N-CH 200V 34A TO220-3

Infineon Technologies

27086 4.13
- +

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IPP320N20N3GXKSA1

Datenblatt

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 200 V 34A (Tc) 10V 32mOhm @ 34A, 10V 4V @ 90µA 29 nC @ 10 V ±20V 2350 pF @ 100 V - 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP3206PBF

IRFP3206PBF

MOSFET N-CH 60V 120A TO247AC

Infineon Technologies

12301 4.15
- +

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Немедленный

IRFP3206PBF

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 3mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6540 pF @ 50 V - 280W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFS3006TRL7PP

IRFS3006TRL7PP

MOSFET N-CH 60V 240A D2PAK

Infineon Technologies

1380 6.65
- +

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Немедленный

IRFS3006TRL7PP

Datenblatt

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 240A (Tc) 10V 2.1mOhm @ 168A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 8850 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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