Добро пожаловать Element Technology Co., Ltd.!

+86 15361839241 0755-23603516
Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
CSD25481F4T

CSD25481F4T

MOSFET P-CH 20V 2.5A 3PICOSTAR

Texas Instruments

5845 0.93
- +

Добавить

Немедленный

CSD25481F4T

Datenblatt

Tape & Reel (TR),Cut Tape (CT) FemtoFET™ Active P-Channel MOSFET (Metal Oxide) 20 V 2.5A (Ta) 1.8V, 4.5V 88mOhm @ 500mA, 8V 1.2V @ 250µA 0.91 nC @ 4.5 V -12V 189 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
AONS66920

AONS66920

MOSFET N-CH 100V 17.5A/48A 8DFN

Alpha & Omega Semiconductor Inc.

110990 1.43
- +

Добавить

Немедленный

AONS66920

Datenblatt

Tape & Reel (TR),Cut Tape (CT) AlphaSGT™ Active N-Channel MOSFET (Metal Oxide) 100 V 17.5A (Ta), 48A (Tc) 4.5V, 10V 8.2mOhm @ 20A, 10V 2.5V @ 250µA 50 nC @ 10 V ±20V 2500 pF @ 50 V - 5W (Ta), 56.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
ISC058N04NM5ATMA1

ISC058N04NM5ATMA1

40V 5.8M OPTIMOS MOSFET SUPERSO8

Infineon Technologies

23457 1.39
- +

Добавить

Немедленный

ISC058N04NM5ATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) OptiMOS™-5 Active N-Channel MOSFET (Metal Oxide) 40 V 17A (Ta), 63A (Tc) 7V, 10V 5.8mOhm @ 31A, 10V 3.4V @ 13µA 16 nC @ 10 V ±20V 1100 pF @ 20 V - 3W (Ta), 42W (Tc) -55°C ~ 175°C (TJ) Surface Mount
CSD23381F4T

CSD23381F4T

MOSFET P-CH 12V 2.3A 3PICOSTAR

Texas Instruments

13740 0.99
- +

Добавить

Немедленный

CSD23381F4T

Datenblatt

Tape & Reel (TR),Cut Tape (CT) FemtoFET™ Active P-Channel MOSFET (Metal Oxide) 12 V 2.3A (Ta) 1.8V, 4.5V 175mOhm @ 500mA, 4.5V 1.2V @ 250µA 1.14 nC @ 6 V -8V 236 pF @ 6 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
CSD25480F3T

CSD25480F3T

MOSFET P-CH 20V 1.7A 3PICOSTAR

Texas Instruments

29213 0.99
- +

Добавить

Немедленный

CSD25480F3T

Datenblatt

Tape & Reel (TR),Cut Tape (CT) FemtoFET™ Active P-Channel MOSFET (Metal Oxide) 20 V 1.7A (Ta) 1.8V, 8V 132mOhm @ 400mA, 8V 1.2V @ 250µA 0.91 nC @ 10 V -12V 155 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDT86106LZ

FDT86106LZ

MOSFET N-CH 100V 3.2A SOT223-4

onsemi

27817 1.48
- +

Добавить

Немедленный

FDT86106LZ

Datenblatt

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 3.2A (Ta) 4.5V, 10V 108mOhm @ 3.2A, 10V 2.2V @ 250µA 7 nC @ 10 V ±20V 315 pF @ 50 V - 2.2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFR3806TRPBF

IRFR3806TRPBF

MOSFET N-CH 60V 43A DPAK

Infineon Technologies

45897 1.44
- +

Добавить

Немедленный

IRFR3806TRPBF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 43A (Tc) 10V 15.8mOhm @ 25A, 10V 4V @ 50µA 30 nC @ 10 V ±20V 1150 pF @ 50 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIR418DP-T1-GE3

SIR418DP-T1-GE3

MOSFET N-CH 40V 40A PPAK SO-8

Vishay Siliconix

33465 1.42
- +

Добавить

Немедленный

SIR418DP-T1-GE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 40A (Tc) 4.5V, 10V 5mOhm @ 20A, 10V 2.4V @ 250µA 75 nC @ 10 V ±20V 2410 pF @ 20 V - 39W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR696DP-T1-GE3

SIR696DP-T1-GE3

MOSFET N-CH 125V 60A PPAK SO-8

Vishay Siliconix

11378 1.42
- +

Добавить

Немедленный

SIR696DP-T1-GE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) ThunderFET® Active N-Channel MOSFET (Metal Oxide) 125 V 60A (Tc) 7.5V, 10V 11.5mOhm @ 20A, 10V 4.5V @ 250µA 38 nC @ 10 V ±20V 1410 pF @ 75 V - 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR1205TRPBF

IRFR1205TRPBF

MOSFET N-CH 55V 44A DPAK

Infineon Technologies

3925 1.49
- +

Добавить

Немедленный

IRFR1205TRPBF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 44A (Tc) 10V 27mOhm @ 26A, 10V 4V @ 250µA 65 nC @ 10 V ±20V 1300 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDD8N50NZTM

FDD8N50NZTM

MOSFET N-CH 500V 6.5A DPAK

onsemi

14975 1.55
- +

Добавить

Немедленный

FDD8N50NZTM

Datenblatt

Tape & Reel (TR),Cut Tape (CT) UniFET-II™ Last Time Buy N-Channel MOSFET (Metal Oxide) 500 V 6.5A (Tc) 10V 850mOhm @ 3.25A, 10V 5V @ 250µA 18 nC @ 10 V ±25V 735 pF @ 25 V - 90W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC032N04LSATMA1

BSC032N04LSATMA1

MOSFET N-CH 40V 21A/98A TDSON

Infineon Technologies

23703 1.50
- +

Добавить

Немедленный

BSC032N04LSATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 21A (Ta), 98A (Tc) 4.5V, 10V 3.2mOhm @ 50A, 10V 2V @ 250µA 25 nC @ 10 V ±20V 1800 pF @ 20 V - 2.5W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4874BDY-T1-E3

SI4874BDY-T1-E3

MOSFET N-CH 30V 12A 8SO

Vishay Siliconix

9562 1.46
- +

Добавить

Немедленный

SI4874BDY-T1-E3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta) 4.5V, 10V 7mOhm @ 16A, 10V 3V @ 250µA 25 nC @ 4.5 V ±20V 3230 pF @ 15 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
TSM2318CX RFG

TSM2318CX RFG

MOSFET N-CHANNEL 40V 3.9A SOT23

Taiwan Semiconductor Corporation

58599 1.55
- +

Добавить

Немедленный

TSM2318CX RFG

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 3.9A (Ta) 4.5V, 10V 45mOhm @ 3.9A, 10V 3V @ 250µA 10 nC @ 10 V ±20V 540 pF @ 20 V - 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSC035N04LSGATMA1

BSC035N04LSGATMA1

MOSFET N-CH 40V 21A/100A TDSON

Infineon Technologies

41096 1.55
- +

Добавить

Немедленный

BSC035N04LSGATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 21A (Ta), 100A (Tc) 4.5V, 10V 3.5mOhm @ 50A, 10V 2V @ 36µA 64 nC @ 10 V ±20V 5100 pF @ 20 V - 2.5W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR5305TRPBF

IRFR5305TRPBF

MOSFET P-CH 55V 31A DPAK

Infineon Technologies

41168 1.55
- +

Добавить

Немедленный

IRFR5305TRPBF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 31A (Tc) 10V 65mOhm @ 16A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1200 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
MIC94052YC6-TR

MIC94052YC6-TR

MOSFET P-CH 6V 2A SC70-6

Microchip Technology

42150 0.79
- +

Добавить

Немедленный

MIC94052YC6-TR

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 6 V 2A (Ta) 1.8V, 4.5V 84mOhm @ 100mA, 4.5V 1.2V @ 250µA - 6V - - 270mW (Ta) -40°C ~ 150°C (TJ) Surface Mount
IPD33CN10NGATMA1

IPD33CN10NGATMA1

MOSFET N-CH 100V 27A TO252-3

Infineon Technologies

13336 1.56
- +

Добавить

Немедленный

IPD33CN10NGATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 27A (Tc) 10V 33mOhm @ 27A, 10V 4V @ 29µA 24 nC @ 10 V ±20V 1570 pF @ 50 V - 58W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIR606BDP-T1-RE3

SIR606BDP-T1-RE3

MOSFET N-CH 100V 10.9A PPAK

Vishay Siliconix

38109 1.52
- +

Добавить

Немедленный

SIR606BDP-T1-RE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 100 V 10.9A (Ta), 38.7A (Tc) 7.5V, 10V 17.4mOhm @ 10A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 1470 pF @ 50 V - 5W (Ta), 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMC8622

FDMC8622

MOSFET N-CH 100V 4A/16A 8MLP

onsemi

40307 1.64
- +

Добавить

Немедленный

FDMC8622

Datenblatt

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 4A (Ta), 16A (Tc) 6V, 10V 56mOhm @ 4A, 10V 4V @ 250µA 7.3 nC @ 10 V ±20V 402 pF @ 50 V - 2.5W (Ta), 31W (Tc) -55°C ~ 150°C (TJ) Surface Mount
Total 42446 Records«Prev1... 1718192021222324...2123Next»
Запрос котировок
Номер запчасти
А
Связь
Электронная почта
Замечания
  • Домой

    Домой

    Продукты

    Продукты

    Телефон

    Телефон

    Пользователи

    Пользователи