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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF540NL

IRF540NL

MOSFET N-CH 100V 33A TO262

Infineon Technologies

3965 0.00
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IRF540NL

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Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 33A (Tc) 10V 44mOhm @ 16A, 10V 4V @ 250µA 71 nC @ 10 V ±20V 1960 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF640NL

IRF640NL

MOSFET N-CH 200V 18A TO262

Infineon Technologies

2522 0.00
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Немедленный

IRF640NL

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 150mOhm @ 11A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1160 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF730AL

IRF730AL

MOSFET N-CH 400V 5.5A I2PAK

Vishay Siliconix

2712 0.00
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Немедленный

IRF730AL

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tc) 10V 1Ohm @ 3.3A, 10V 4.5V @ 250µA 22 nC @ 10 V ±30V 600 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF740AL

IRF740AL

MOSFET N-CH 400V 10A I2PAK

Vishay Siliconix

3997 0.00
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Немедленный

IRF740AL

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 550mOhm @ 6A, 10V 4V @ 250µA 36 nC @ 10 V ±30V 1030 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF820AL

IRF820AL

MOSFET N-CH 500V 2.5A I2PAK

Vishay Siliconix

3850 0.00
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Немедленный

IRF820AL

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 2.5A (Tc) 10V 3Ohm @ 1.5A, 10V 4.5V @ 250µA 17 nC @ 10 V ±30V 340 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF830AL

IRF830AL

MOSFET N-CH 500V 5A I2PAK

Vishay Siliconix

3258 0.00
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Немедленный

IRF830AL

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.4Ohm @ 3A, 10V 4.5V @ 250µA 24 nC @ 10 V ±30V 620 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF840LCL

IRF840LCL

MOSFET N-CH 500V 8A I2PAK

Vishay Siliconix

2741 0.00
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Немедленный

IRF840LCL

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBC20L

IRFBC20L

MOSFET N-CH 600V 2.2A I2PAK

Vishay Siliconix

3931 0.00
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Немедленный

IRFBC20L

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2.2A (Tc) 10V 4.4Ohm @ 1.3A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 350 pF @ 25 V - 3.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBC30L

IRFBC30L

MOSFET N-CH 600V 3.6A I2PAK

Vishay Siliconix

3432 0.00
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Немедленный

IRFBC30L

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3.6A (Tc) 10V 2.2Ohm @ 2.2A, 10V 4V @ 250µA 31 nC @ 10 V ±20V 660 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBC40L

IRFBC40L

MOSFET N-CH 600V 6.2A I2PAK

Vishay Siliconix

3367 0.00
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Немедленный

IRFBC40L

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 130W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBF20L

IRFBF20L

MOSFET N-CH 900V 1.7A I2PAK

Vishay Siliconix

2538 0.00
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Немедленный

IRFBF20L

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 900 V 1.7A (Tc) 10V 8Ohm @ 1A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 490 pF @ 25 V - 3.1W (Ta), 54W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFSL11N50A

IRFSL11N50A

MOSFET N-CH 500V 11A TO262-3

Vishay Siliconix

2588 0.00
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Немедленный

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 550mOhm @ 6.6A, 10V 4V @ 250µA 51 nC @ 10 V ±30V 1426 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL17N20D

IRFSL17N20D

MOSFET N-CH 200V 16A TO262

Infineon Technologies

3326 0.00
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Немедленный

IRFSL17N20D

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 16A (Tc) 10V 170mOhm @ 9.8A, 10V 5.5V @ 250µA 50 nC @ 10 V ±30V 1100 pF @ 25 V - 3.8W (Ta), 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL23N15D

IRFSL23N15D

MOSFET N-CH 150V 23A TO262

Infineon Technologies

2867 0.00
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Немедленный

IRFSL23N15D

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 23A (Tc) 10V 90mOhm @ 14A, 10V 5.5V @ 250µA 56 nC @ 10 V ±30V 1200 pF @ 25 V - 3.8W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL23N20D

IRFSL23N20D

MOSFET N-CH 200V 24A TO262

Infineon Technologies

2358 0.00
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Немедленный

IRFSL23N20D

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 24A (Tc) 10V 100mOhm @ 14A, 10V 5.5V @ 250µA 86 nC @ 10 V ±30V 1960 pF @ 25 V - 3.8W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL33N15D

IRFSL33N15D

MOSFET N-CH 150V 33A TO262

Infineon Technologies

3190 0.00
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Немедленный

IRFSL33N15D

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) 10V 56mOhm @ 20A, 10V 5.5V @ 250µA 90 nC @ 10 V ±30V 2020 pF @ 25 V - 3.8W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL59N10D

IRFSL59N10D

MOSFET N-CH 100V 59A TO262

Infineon Technologies

2874 0.00
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Немедленный

IRFSL59N10D

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 59A (Tc) 10V 25mOhm @ 35.4A, 10V 5.5V @ 250µA 114 nC @ 10 V ±30V 2450 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ24NL

IRFZ24NL

MOSFET N-CH 55V 17A TO262

Infineon Technologies

2802 0.00
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Немедленный

IRFZ24NL

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 17A (Tc) 10V 70mOhm @ 10A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 370 pF @ 25 V - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ34NL

IRFZ34NL

MOSFET N-CH 55V 29A TO262

Infineon Technologies

3388 0.00
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Немедленный

IRFZ34NL

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 29A (Tc) 10V 40mOhm @ 16A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 700 pF @ 25 V - 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ44EL

IRFZ44EL

MOSFET N-CH 60V 48A TO262

Infineon Technologies

2532 0.00
- +

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Немедленный

IRFZ44EL

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 48A (Tc) 10V 23mOhm @ 29A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1360 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
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