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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRLMS4502TR

IRLMS4502TR

MOSFET P-CH 12V 5.5A MICRO6

Infineon Technologies

3488 0.00
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IRLMS4502TR

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Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 12 V 5.5A (Ta) 2.5V, 4.5V 42mOhm @ 5.5A, 4.5V 600mV @ 250µA (Min) 33 nC @ 5 V ±12V 1820 pF @ 10 V - 1.7W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7534D1

IRF7534D1

MOSFET P-CH 20V 4.3A MICRO8

Infineon Technologies

2840 0.00
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IRF7534D1

Datenblatt

Tube FETKY™ Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.3A (Ta) 2.5V, 4.5V 55mOhm @ 4.3A, 4.5V 1.2V @ 250µA 15 nC @ 5 V ±12V 1066 pF @ 10 V Schottky Diode (Isolated) 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7526D1

IRF7526D1

MOSFET P-CH 30V 2A MICRO8

Infineon Technologies

3736 0.00
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IRF7526D1

Datenblatt

Tube FETKY™ Obsolete P-Channel MOSFET (Metal Oxide) 30 V 2A (Ta) 4.5V, 10V 200mOhm @ 1.2A, 10V 1V @ 250µA 11 nC @ 10 V ±20V 180 pF @ 25 V Schottky Diode (Isolated) 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7233TR

IRF7233TR

MOSFET P-CH 12V 9.5A 8SO

Infineon Technologies

2160 0.00
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IRF7233TR

Datenblatt

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 12 V 9.5A (Ta) 2.5V, 4.5V 20mOhm @ 9.5A, 4.5V 600mV @ 250µA (Min) 74 nC @ 5 V ±12V 6000 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF730ASTRL

IRF730ASTRL

MOSFET N-CH 400V 5.5A D2PAK

Vishay Siliconix

3592 0.00
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IRF730ASTRL

Datenblatt

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tc) 10V 1Ohm @ 3.3A, 10V 4.5V @ 250µA 22 nC @ 10 V ±30V 600 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF730ASTRR

IRF730ASTRR

MOSFET N-CH 400V 5.5A D2PAK

Vishay Siliconix

3480 0.00
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IRF730ASTRR

Datenblatt

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tc) 10V 1Ohm @ 3.3A, 10V 4.5V @ 250µA 22 nC @ 10 V ±30V 600 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF730L

IRF730L

MOSFET N-CH 400V 5.5A I2PAK

Vishay Siliconix

2623 0.00
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IRF730L

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tc) 10V 1Ohm @ 3.3A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 600 pF @ 25 V - - -55°C ~ 150°C (TJ) Through Hole
IRF820STRR

IRF820STRR

MOSFET N-CH 500V 2.5A D2PAK

Vishay Siliconix

2677 0.00
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Немедленный

IRF820STRR

Datenblatt

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 2.5A (Tc) 10V 3Ohm @ 1.5A, 10V 4V @ 250µA 24 nC @ 10 V ±20V 360 pF @ 25 V - 3.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF830ASTRL

IRF830ASTRL

MOSFET N-CH 500V 5A D2PAK

Vishay Siliconix

3513 0.00
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IRF830ASTRL

Datenblatt

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.4Ohm @ 3A, 10V 4.5V @ 250µA 24 nC @ 10 V ±30V 620 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF830L

IRF830L

MOSFET N-CH 500V 4.5A I2PAK

Vishay Siliconix

3536 0.00
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IRF830L

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 4.5A (Tc) 10V 1.5Ohm @ 2.7A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 610 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF830STRL

IRF830STRL

MOSFET N-CH 500V 4.5A D2PAK

Vishay Siliconix

3140 0.00
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Немедленный

IRF830STRL

Datenblatt

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 4.5A (Tc) 10V 1.5Ohm @ 2.7A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 610 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF820A

IRF820A

MOSFET N-CH 500V 2.5A TO220AB

Vishay Siliconix

3093 0.00
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Немедленный

IRF820A

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 2.5A (Tc) 10V 3Ohm @ 1.5A, 10V 4.5V @ 250µA 17 nC @ 10 V ±30V 340 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFB17N20D

IRFB17N20D

MOSFET N-CH 200V 16A TO220AB

Infineon Technologies

2047 0.00
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Немедленный

IRFB17N20D

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 16A (Tc) 10V 170mOhm @ 9.8A, 10V 5.5V @ 250µA 50 nC @ 10 V ±30V 1100 pF @ 25 V - 3.8W (Ta), 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB23N20D

IRFB23N20D

MOSFET N-CH 200V 24A TO220AB

Infineon Technologies

2953 0.00
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IRFB23N20D

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 24A (Tc) 10V 100mOhm @ 14A, 10V 5.5V @ 250µA 86 nC @ 10 V ±30V 1960 pF @ 25 V - 3.8W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB33N15D

IRFB33N15D

MOSFET N-CH 150V 33A TO220AB

Infineon Technologies

2625 0.00
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Немедленный

IRFB33N15D

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) 10V 56mOhm @ 20A, 10V 5.5V @ 250µA 90 nC @ 10 V ±30V 2020 pF @ 25 V - 3.8W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB41N15D

IRFB41N15D

MOSFET N-CH 150V 41A TO220AB

Infineon Technologies

2266 0.00
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Немедленный

IRFB41N15D

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 41A (Tc) 10V 45mOhm @ 25A, 10V 5.5V @ 250µA 110 nC @ 10 V ±30V 2520 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB9N30A

IRFB9N30A

MOSFET N-CH 300V 9.3A TO220AB

Vishay Siliconix

3457 0.00
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Немедленный

IRFB9N30A

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 300 V 9.3A (Tc) 10V 450mOhm @ 5.6A, 10V 4V @ 250µA 33 nC @ 10 V ±30V 920 pF @ 25 V - 96W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFZ48R

IRFZ48R

MOSFET N-CH 60V 50A TO220AB

Vishay Siliconix

2484 0.00
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Немедленный

IRFZ48R

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 18mOhm @ 43A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2400 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL1104

IRL1104

MOSFET N-CH 40V 104A TO220AB

Infineon Technologies

2050 0.00
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Немедленный

IRL1104

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 104A (Tc) 4.5V, 10V 8mOhm @ 62A, 10V 1V @ 250µA 68 nC @ 4.5 V ±16V 3445 pF @ 25 V - 167W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFI734G

IRFI734G

MOSFET N-CH 450V 3.4A TO220-3

Vishay Siliconix

2797 0.00
- +

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Немедленный

IRFI734G

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 450 V 3.4A (Tc) 10V 1.2Ohm @ 2A, 10V 4V @ 250µA 45 nC @ 10 V ±20V 680 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
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