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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFZ34NSTRRPBF

IRFZ34NSTRRPBF

MOSFET N-CH 55V 29A D2PAK

International Rectifier

3954 1.00
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IRFZ34NSTRRPBF

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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 29A (Tc) 10V 40mOhm @ 16A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 700 pF @ 25 V - 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDS86267P

FDS86267P

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor

2641 1.00
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FDS86267P

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Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 150 V 2.2A (Ta) 6V, 10V 255mOhm @ 2.2A, 10V 4V @ 250µA 16 nC @ 10 V ±25V 1130 pF @ 75 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDS9431A

FDS9431A

P-CHANNEL 2.5V SPECIFIED MOSFET

Fairchild Semiconductor

3344 1.00
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FDS9431A

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Bulk - Active P-Channel MOSFET (Metal Oxide) 20 V 3.5A (Ta) 2.5V, 4.5V 130mOhm @ 3.5A, 4.5V 1V @ 250µA 8.5 nC @ 4.5 V ±8V 405 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
MIC94030YM4

MIC94030YM4

TINYFET P-CHANNEL MOSFET

Micrel Inc.

2795 1.00
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MIC94030YM4

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
FDT3612

FDT3612

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor

3942 1.00
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Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 3.7A (Ta) 6V, 10V 120mOhm @ 3.7A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 632 pF @ 50 V - 3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQP20N06L

FQP20N06L

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor

3327 1.00
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Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 60 V 21A (Tc) 5V, 10V 55mOhm @ 10.5A, 10V 2.5V @ 250µA 13 nC @ 5 V ±20V 630 pF @ 25 V - 53W (Tc) -55°C ~ 175°C (TJ) Through Hole
NX2301P,215

NX2301P,215

20 V, 2 A P-CHANNEL TRENCH MOSFE

NXP Semiconductors

2808 1.00
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NX2301P,215

Datenblatt

Bulk Automotive, AEC-Q101, TrenchMOS™ Active P-Channel MOSFET (Metal Oxide) 20 V 2A (Ta) 2.5V, 4.5V 120mOhm @ 1A, 4.5V 1.1V @ 250µA 6 nC @ 4.5 V ±8V 380 pF @ 6 V - 400mW (Ta), 2.8W (Tc) 150°C (TJ) Surface Mount
NP60N055VUK-E1-AY

NP60N055VUK-E1-AY

MOSFET N-CH 55V 60A TO252-3

Renesas Electronics America Inc

2061 1.00
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NP60N055VUK-E1-AY

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 55 V 60A (Tc) 10V 5.5mOhm @ 30A, 10V 4V @ 253µA 63 nC @ 10 V ±20V 3750 pF @ 25 V - 1.2W (Ta), 105W (Tc) 175°C (TJ) Surface Mount
NX138BKR

NX138BKR

NX138BK - 60 V, SINGLE N-CHANNEL

NXP USA Inc.

3879 1.00
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NX138BKR

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Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 265mA (Ta) 2.5V, 10V 3.5Ohm @ 200mA, 10V 1.5V @ 250µA 0.49 nC @ 4.5 V ±20V 20.2 pF @ 30 V - 310mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLML0060TRPBF

IRLML0060TRPBF

IRLML0060 - 20V-100V N-CHANNEL S

International Rectifier

3212 1.00
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IRLML0060TRPBF

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 2.7A (Ta) 4.5V, 10V 92mOhm @ 2.7A, 10V 2.5V @ 25µA 2.5 nC @ 4.5 V ±16V 290 pF @ 25 V - 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
PSMN025-80YLX

PSMN025-80YLX

PSMN025-80YL - N-CHANNEL 80V, LO

NXP USA Inc.

2421 1.00
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PSMN025-80YLX

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Bulk - Active N-Channel MOSFET (Metal Oxide) 80 V 37A (Tc) 5V, 10V 25mOhm @ 10A, 10V 2.1V @ 1mA 17.1 nC @ 5 V ±20V 2703 pF @ 25 V - 95W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLZ24NSPBF

IRLZ24NSPBF

MOSFET N-CH 55V 18A D2PAK

International Rectifier

2472 1.00
- +

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IRLZ24NSPBF

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 18A (Tc) 4V, 10V 60mOhm @ 11A, 10V 2V @ 250µA 15 nC @ 5 V ±16V 480 pF @ 25 V - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP60R190C6

IPP60R190C6

POWER FIELD-EFFECT TRANSISTOR, 2

Infineon Technologies

3096 1.00
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IPP60R190C6

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
PMPB48EP,115

PMPB48EP,115

MOSFET P-CH 30V 4.7A DFN2020MD-6

NXP USA Inc.

2065 1.00
- +

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PMPB48EP,115

Datenblatt

Bulk - Active P-Channel MOSFET (Metal Oxide) 30 V 4.7A (Ta) 4.5V, 10V 50mOhm @ 4.7A, 10V 2.5V @ 250µA 26 nC @ 10 V ±20V 860 pF @ 15 V - 1.7W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
MIC94030YM4TR

MIC94030YM4TR

MOSFET P-CH 16V 1A SOT143

Microchip Technology

3038 1.00
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MIC94030YM4TR

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Bulk - Active P-Channel MOSFET (Metal Oxide) 16 V 1A (Ta) - 450mOhm @ 100mA, 10V 1.4V @ 250µA - ±16V 100 pF @ 12 V - 568mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDMS86320

FDMS86320

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor

2992 1.00
- +

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FDMS86320

Datenblatt

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 10.5A (Ta), 22A (Tc) 8V, 10V 11.7mOhm @ 10.5A, 10V 4.5V @ 250µA 41 nC @ 10 V ±20V 2640 pF @ 40 V - 2.5W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC118N10NSG

BSC118N10NSG

BSC118N10 - 12V-300V N-CHANNEL P

Infineon Technologies

3846 1.00
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BSC118N10NSG

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
FDN308P

FDN308P

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor

2255 1.00
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FDN308P

Datenblatt

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 1.5A (Ta) 2.5V, 4.5V 125mOhm @ 1.5A, 4.5V 1.5V @ 250µA 5.4 nC @ 4.5 V ±12V 341 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDMC8588DC

FDMC8588DC

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor

3736 1.00
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FDMC8588DC

Datenblatt

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 25 V 17A (Ta), 40A (Tc) 4.5V, 10V 5mOhm @ 18A, 10V 1.8V @ 250µA 12 nC @ 4.5 V ±12V 1695 pF @ 13 V - 3W (Ta), 41W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMPB13XNE,115

PMPB13XNE,115

MOSFET N-CH 30V 8A DFN2020MD-6

NXP USA Inc.

3916 1.00
- +

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PMPB13XNE,115

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 8A (Ta) 1.8V, 4.5V 16mOhm @ 8A, 4.5V 900mV @ 250µA 36 nC @ 4.5 V ±12V 2195 pF @ 15 V - 1.7W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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