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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRLR3110ZTRPBF

IRLR3110ZTRPBF

IRLR3110 - 12V-300V N-CHANNEL PO

International Rectifier

2625 1.00
- +

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IRLR3110ZTRPBF

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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) 4.5V, 10V 14mOhm @ 38A, 10V 2.5V @ 100µA 48 nC @ 4.5 V ±16V 3980 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN004-60B,118

PSMN004-60B,118

MOSFET N-CH 60V 75A D2PAK

NXP USA Inc.

2184 1.00
- +

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PSMN004-60B,118

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Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 10V 3.6mOhm @ 25A, 10V 4V @ 1mA 168 nC @ 10 V ±20V 8300 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRL7732S2TR

AUIRL7732S2TR

MOSFET N-CH 40V 14A DIRECTFET SC

International Rectifier

3044 0.00
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AUIRL7732S2TR

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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 14A (Ta) 4.5V, 10V 6.6mOhm @ 35A, 10V 2.5V @ 50µA 33 nC @ 4.5 V ±16V 2020 pF @ 25 V - 2.2W (Ta), 41W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP65R280C6

IPP65R280C6

POWER FIELD-EFFECT TRANSISTOR, 6

Infineon Technologies

2669 1.00
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IPP65R280C6

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
IPP80R900P7

IPP80R900P7

IPP80R900 - 800V COOLMOS N-CHANN

Infineon Technologies

2213 1.00
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IPP80R900P7

Datenblatt

Bulk - Active - - - - - - - - - - - - - -
IPB180N03S4L-01

IPB180N03S4L-01

IPB180N03 - 20V-40V N-CHANNEL AU

Infineon Technologies

3056 1.00
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IPB180N03S4L-01

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Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 180A (Tc) 4.5V, 10V 1.05mOhm @ 100A, 10V 2.2V @ 140µA 239 nC @ 10 V ±16V 17600 pF @ 25 V - 188W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB3006GPBF

IRFB3006GPBF

MOSFET N-CH 60V 195A TO220AB

International Rectifier

2644 1.00
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IRFB3006GPBF

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 10V 2.5mOhm @ 170A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 8970 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW60R099C7

IPW60R099C7

MOSFET N-CH 600V 22A TO247

Infineon Technologies

2051 1.00
- +

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IPW60R099C7

Datenblatt

Bulk CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) - 99mOhm @ 9.7A, 10V 4V @ 490µA 42 nC @ 10 V ±20V 1819 pF @ 400 V - 110W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW60R199CP

IPW60R199CP

16A, 600V, 0.199OHM, N-CHANNEL M

Infineon Technologies

2324 1.00
- +

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IPW60R199CP

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
BUK7Y29-40EX

BUK7Y29-40EX

MOSFET N-CH 40V 26A LFPAK56

NXP USA Inc.

3466 1.00
- +

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BUK7Y29-40EX

Datenblatt

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 26A (Tc) 10V 29mOhm @ 5A, 10V 4V @ 1mA 7.9 nC @ 10 V ±20V 492 pF @ 25 V - 37W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS3004

AUIRFS3004

MOSFET N-CH 40V 195A D2PAK-3

International Rectifier

2357 1.00
- +

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AUIRFS3004

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 1.75mOhm @ 195A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 9200 pF @ 25 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK7Y28-75B,115

BUK7Y28-75B,115

TRANSISTOR >30MHZ

NXP USA Inc.

3386 1.00
- +

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BUK7Y28-75B,115

Datenblatt

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 75 V 35.5A (Tc) 10V 28mOhm @ 15A, 10V 4V @ 1mA 21.2 nC @ 10 V ±20V 1417 pF @ 25 V - 85W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSS123L

BSS123L

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor

3860 1.00
- +

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BSS123L

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 170mA (Ta) 4.5V, 10V 6Ohm @ 170mA, 10V 2V @ 1mA 2.5 nC @ 10 V ±20V 21.5 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SPD18P06PG

SPD18P06PG

SPD18P06 - 20V-250V P-CHANNEL PO

Infineon Technologies

3142 1.00
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SPD18P06PG

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
SPW52N50C3XK

SPW52N50C3XK

SPW52N50 - 500V COOLMOS N-CHANNE

Infineon Technologies

2131 1.00
- +

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Немедленный

Bulk * Active - - - - - - - - - - - - - -
BUK98150-55A/CU,135

BUK98150-55A/CU,135

NOW NEXPERIA BUK98150-55A - POWE

Nexperia USA Inc.

3230 1.00
- +

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BUK98150-55A/CU,135

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
FDB52N20TM

FDB52N20TM

POWER FIELD-EFFECT TRANSISTOR, 5

Fairchild Semiconductor

3757 1.00
- +

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FDB52N20TM

Datenblatt

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 200 V 52A (Tc) 10V 49mOhm @ 26A, 10V 5V @ 250µA 63 nC @ 10 V ±30V 2900 pF @ 25 V - 357W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR7440TRPBF

IRFR7440TRPBF

IRFR7440 - 12V-300V N-CHANNEL PO

International Rectifier

3094 1.00
- +

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Немедленный

IRFR7440TRPBF

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 6V, 10V 2.4mOhm @ 90A, 10V 3.9V @ 100µA 134 nC @ 10 V ±20V 4610 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS7434-7PPBF

IRFS7434-7PPBF

MOSFET N-CH 40V 240A D2PAK

International Rectifier

2198 1.00
- +

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Немедленный

IRFS7434-7PPBF

Datenblatt

Bulk HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 6V, 10V 1mOhm @ 100A, 10V 3.9V @ 250µA 315 nC @ 10 V ±20V 10250 pF @ 25 V - 245W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFSL7434PBF

IRFSL7434PBF

MOSFET N-CH 40V 195A TO262

International Rectifier

3710 1.00
- +

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Немедленный

IRFSL7434PBF

Datenblatt

Bulk HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 6V, 10V 1.6mOhm @ 100A, 10V 3.9V @ 250µA 324 nC @ 10 V ±20V 10820 pF @ 25 V - 294W (Tc) -55°C ~ 175°C (TJ) Through Hole
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