Фотографии | Производитель. Часть # | Акции | Цены | А | Таблицы данных | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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R6024ENZC17MOSFET N-CH 600V 24A TO3PF |
3082 | 4.66 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 24A (Tc) | 10V | 165mOhm @ 11.3A, 10V | 4V @ 1mA | 70 nC @ 10 V | ±20V | 1650 pF @ 25 V | - | 120W (Tc) | 150°C (TJ) | Through Hole |
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R6524KNZC17MOSFET N-CH 650V 24A TO3 |
3143 | 4.66 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 185mOhm @ 11.3A, 10V | 5V @ 750µA | 45 nC @ 10 V | ±20V | 1850 pF @ 25 V | - | 74W (Tc) | 150°C (TJ) | Through Hole |
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R6524ENZC17MOSFET N-CH 650V 24A TO3 |
2469 | 4.66 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 185mOhm @ 11.3A, 10V | 4V @ 750µA | 70 nC @ 10 V | ±20V | 1650 pF @ 25 V | - | 74W (Tc) | 150°C (TJ) | Through Hole |
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TSM60NB260CI C0GMOSFET N-CH 600V 13A ITO220AB |
2917 | 4.67 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 13A (Tc) | 10V | 260mOhm @ 3.9A, 10V | 4V @ 250µA | 30 nC @ 10 V | ±30V | 1273 pF @ 100 V | - | 32.1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPA60R099C7XKSA1MOSFET N-CH 600V 12A TO220-FP |
3178 | 1.00 |
ДобавитьНемедленный |
![]() Datenblatt |
Bulk,Tube | CoolMOS™ C7 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 99mOhm @ 9.7A, 10V | 4V @ 490µA | 42 nC @ 10 V | ±20V | 1819 pF @ 400 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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SIHG33N65E-GE3MOSFET N-CH 650V 32.4A TO247AC |
3137 | 4.68 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 32.4A (Tc) | 10V | 105mOhm @ 16.5A, 10V | 4V @ 250µA | 173 nC @ 10 V | ±30V | 4040 pF @ 100 V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IXFP24N60XMOSFET N-CH 600V 24A TO220AB |
2153 | 4.70 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | HiPerFET™, Ultra X | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 24A (Tc) | 10V | 175mOhm @ 12A, 10V | 4.5V @ 2.5mA | 47 nC @ 10 V | ±30V | 1910 pF @ 25 V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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NTD5C434NT4GMOSFET N-CH 40V 33A/160A DPAK |
5000 | 4.65 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT),Bulk | - | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 40 V | 33A (Ta), 160A (Tc) | 10V | 2.1mOhm @ 50A, 10V | 4V @ 250µA | 80.6 nC @ 10 V | ±20V | 5400 pF @ 25 V | - | 4.7W (Ta), 120W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IXTA260N055T2MOSFET N-CH 55V 260A TO263 |
3351 | 4.75 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 260A (Tc) | 10V | 3.3mOhm @ 50A, 10V | 4V @ 250µA | 140 nC @ 10 V | ±20V | 10800 pF @ 25 V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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TSM60NB190CM2 RNGMOSFET N-CH 600V 18A TO263 |
2299 | 4.76 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 10V | 190mOhm @ 6A, 10V | 4V @ 250µA | 31 nC @ 10 V | ±30V | 1273 pF @ 100 V | - | 150.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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NVMTS001N06CLTXGT6 60V LL PQFN8*8 EXPANSI |
3443 | 4.77 |
ДобавитьНемедленный |
Tape & Reel (TR) | Automotive, AEC-Q101 | Active | - | - | - | 56.9A (Ta), 398.2A (Tc) | - | - | - | - | - | - | - | - | - | - | |
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TK28E65W,S1XPB-F POWER MOSFET TRANSISTOR TO- |
2316 | 4.70 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 27.6A (Ta) | 10V | 110mOhm @ 13.8A, 10V | 3.5V @ 1.6mA | 75 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 230W (Tc) | 150°C | Through Hole |
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IPB65R110CFDATMA2MOSFET N-CH 650V 31.2A TO263-3 |
3253 | 4.79 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | CoolMOS™ CFD2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 31.2A (Tc) | 10V | 110mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118 nC @ 10 V | ±20V | 3240 pF @ 100 V | - | 277.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IXFH12N80PMOSFET N-CH 800V 12A TO247AD |
3317 | 4.79 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 12A (Tc) | 10V | 850mOhm @ 500mA, 10V | 5.5V @ 2.5mA | 51 nC @ 10 V | ±30V | 2800 pF @ 25 V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IXTP24N65X2MMOSFET N-CH 650V 24A TO220 |
2825 | 4.79 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | Ultra X2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 145mOhm @ 12A, 10V | 5V @ 250µA | 36 nC @ 10 V | ±30V | 2060 pF @ 25 V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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NTH4L067N65S3HSUPERFET3 FAST 67MOHM TO-247-4 |
2176 | 4.79 |
ДобавитьНемедленный |
![]() Datenblatt |
Tray | SuperFET® III | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 40A (Tc) | 10V | 67mOhm @ 20A, 10V | 4V @ 3.9mA | 80 nC @ 10 V | ±30V | 3750 pF @ 400 V | - | 266W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IXFP4N100PMMOSFET N-CH 1000V 2.1A TO220 |
2404 | 4.81 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 2.1A (Tc) | 10V | 3.3Ohm @ 2A, 10V | 6V @ 250µA | 26 nC @ 10 V | ±20V | 1456 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPA65R095C7XKSA1MOSFET N-CH 650V 12A TO220-FP |
3492 | 4.81 |
ДобавитьНемедленный |
![]() Datenblatt |
Bulk,Tube | CoolMOS™ C7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 12A (Tc) | 10V | 95mOhm @ 11.8A, 10V | 4V @ 590µA | 45 nC @ 10 V | ±20V | 2140 pF @ 400 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IXTA160N10T7MOSFET N-CH 100V 160A TO263-7 |
2248 | 4.82 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | Trench | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 160A (Tc) | 10V | 7mOhm @ 25A, 10V | 4.5V @ 1mA | 132 nC @ 10 V | ±30V | 6600 pF @ 25 V | - | 430W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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AUIRFS4010TRLMOSFET N-CH 100V 180A D2PAK |
2763 | 4.82 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | HEXFET® | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 100 V | 180A (Tc) | - | 4.7mOhm @ 106A, 10V | 4V @ 250µA | 215 nC @ 10 V | - | 9575 pF @ 50 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |