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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
STFU13N80K5

STFU13N80K5

MOSFET N-CH 800V 12A TO220FP

STMicroelectronics

2107 4.51
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STFU13N80K5

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Tube MDmesh™ K5 Active N-Channel MOSFET (Metal Oxide) 800 V 12A (Tc) 10V 450mOhm @ 6A, 10V 5V @ 100µA 29 nC @ 10 V ±30V 870 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6020ENZC17

R6020ENZC17

MOSFET N-CH 600V 20A TO3PF

Rohm Semiconductor

2164 4.52
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R6020ENZC17

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Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 196mOhm @ 9.5A, 10V 4V @ 1mA 60 nC @ 10 V ±20V 1400 pF @ 25 V - 120W (Tc) 150°C (TJ) Through Hole
R6520ENZC17

R6520ENZC17

MOSFET N-CH 650V 20A TO3

Rohm Semiconductor

2500 4.52
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R6520ENZC17

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Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 205mOhm @ 9.5A, 10V 4V @ 630µA 61 nC @ 10 V ±20V 1400 pF @ 25 V - 68W (Tc) 150°C (TJ) Through Hole
STWA40N60M2

STWA40N60M2

MOSFET N-CHANNEL 600V 34A TO247

STMicroelectronics

2007 4.52
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Tube MDmesh™ M2 Active N-Channel MOSFET (Metal Oxide) 600 V 34A (Tc) 10V - - - - - - - - Through Hole
STW18NM60N

STW18NM60N

MOSFET N-CH 600V 13A TO247-3

STMicroelectronics

2537 4.53
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STW18NM60N

Datenblatt

Tube MDmesh™ II Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 285mOhm @ 6.5A, 10V 4V @ 250µA 35 nC @ 10 V ±25V 1000 pF @ 50 V - 110W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPC300N20N3X7SA1

IPC300N20N3X7SA1

MV POWER MOS

Infineon Technologies

2661 4.53
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IPC300N20N3X7SA1

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Bulk * Active - - - - - - - - - - - - - -
FCA16N60N

FCA16N60N

MOSFET N-CH 600V TO-3PN

onsemi

3695 4.54
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FCA16N60N

Datenblatt

Tube * Last Time Buy - - - - - - - - - - - - - -
FQA90N15-F109

FQA90N15-F109

MOSFET N-CH 150V 90A TO3PN

onsemi

2491 4.55
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FQA90N15-F109

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Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 90A (Tc) 10V 18mOhm @ 45A, 10V 4V @ 250µA 285 nC @ 10 V ±25V 8700 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
STMFS5C609NLT1G

STMFS5C609NLT1G

TRENCHFET 60V N-CH TRENCH

onsemi

3372 4.55
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Tape & Reel (TR) - Active - - - - - - - - - - - - - -
IPI041N12N3GAKSA1

IPI041N12N3GAKSA1

MOSFET N-CH 120V 120A TO262-3

Infineon Technologies

3386 4.55
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IPI041N12N3GAKSA1

Datenblatt

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 120 V 120A (Tc) 10V 4.1mOhm @ 100A, 10V 4V @ 270µA 211 nC @ 10 V ±20V 13800 pF @ 60 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHG28N65EF-GE3

SIHG28N65EF-GE3

MOSFET N-CH 650V 28A TO247AC

Vishay Siliconix

2812 4.55
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SIHG28N65EF-GE3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 28A (Tc) 10V 117mOhm @ 14A, 10V 4V @ 250µA 146 nC @ 10 V ±30V 3249 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRFS4310TRL

AUIRFS4310TRL

MOSFET N-CH 100V 75A D2PAK

Infineon Technologies

3904 4.55
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AUIRFS4310TRL

Datenblatt

Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 7mOhm @ 75A, 10V 4V @ 250µA 250 nC @ 10 V ±20V 7670 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPP20N60CFDXKSA1

SPP20N60CFDXKSA1

MOSFET N-CH 650V 20.7A TO220-3

Infineon Technologies

3086 4.57
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SPP20N60CFDXKSA1

Datenblatt

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 20.7A (Tc) 10V 220mOhm @ 13.1A, 10V 5V @ 1mA 124 nC @ 10 V ±20V 2400 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPA20N60CFDXKSA1

SPA20N60CFDXKSA1

MOSFET N-CH 600V 20.7A TO220-FP

Infineon Technologies

3715 4.57
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SPA20N60CFDXKSA1

Datenblatt

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 20.7A (Tc) 10V 220mOhm @ 13.1A, 10V 5V @ 1mA 124 nC @ 10 V ±20V 2400 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
IAUT300N10S5N014ATMA1

IAUT300N10S5N014ATMA1

MOSFET_(75V 120V( PG-HSOF-8

Infineon Technologies

3318 4.48
- +

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IAUT300N10S5N014ATMA1

Datenblatt

Tape & Reel (TR) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 360A (Tj) 6V, 10V 1.4mOhm @ 100A, 10V 3.8V @ 275µA 216 nC @ 10 V ±20V 16011 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA90R340C3XKSA2

IPA90R340C3XKSA2

MOSFET N-CH 900V 15A TO220

Infineon Technologies

3443 4.58
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Немедленный

IPA90R340C3XKSA2

Datenblatt

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 900 V 15A (Tc) 10V 340mOhm @ 9.2A, 10V 3.5V @ 1mA 94 nC @ 10 V ±20V 2400 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI90R340C3XKSA2

IPI90R340C3XKSA2

MOSFET N-CH 900V 15A TO262-3

Infineon Technologies

3264 4.58
- +

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Немедленный

IPI90R340C3XKSA2

Datenblatt

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 900 V 15A (Tc) 10V 340mOhm @ 9.2A, 10V 3.5V @ 1mA 94 nC @ 10 V ±20V 2400 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP90R340C3XKSA2

IPP90R340C3XKSA2

MOSFET N-CH 900V 15A TO220-3

Infineon Technologies

3992 4.58
- +

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Немедленный

IPP90R340C3XKSA2

Datenblatt

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 900 V 15A (Tc) 10V 340mOhm @ 9.2A, 10V 3.5V @ 1mA 94 nC @ 10 V ±20V 2400 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFA10N80P

IXFA10N80P

MOSFET N-CH 800V 10A TO263

IXYS

2165 4.58
- +

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IXFA10N80P

Datenblatt

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 10A (Tc) 10V 1.1Ohm @ 5A, 10V 5.5V @ 2.5mA 40 nC @ 10 V ±30V 2050 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
R6024KNZ4C13

R6024KNZ4C13

MOSFET N-CH 600V 24A TO247

Rohm Semiconductor

2848 4.58
- +

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Немедленный

R6024KNZ4C13

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 165mOhm @ 11.3A, 10V 5V @ 1mA 45 nC @ 10 V ±20V 2000 pF @ 25 V - 245W (Tc) 150°C (TJ) Through Hole
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