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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
NDUL03N150CG

NDUL03N150CG

MOSFET N-CH 1500V 2.5A TO3P

onsemi

2243 3.71
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NDUL03N150CG

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Tube - Obsolete N-Channel MOSFET (Metal Oxide) 1500 V 2.5A (Ta) 10V 10.5Ohm @ 1.25A, 10V - 34 nC @ 10 V ±30V 650 pF @ 30 V - 3W (Ta), 50W (Tc) 150°C (TJ) Through Hole
TK25E60X5,S1X

TK25E60X5,S1X

MOSFET N-CH 600V 25A TO220

Toshiba Semiconductor and Storage

3838 3.71
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TK25E60X5,S1X

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Tube DTMOSIV-H Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Ta) 10V 140mOhm @ 7.5A, 10V 4.5V @ 1.2mA 60 nC @ 10 V ±30V 2400 pF @ 300 V - 180W (Tc) 150°C (TJ) Through Hole
SIHF28N60EF-GE3

SIHF28N60EF-GE3

MOSFET N-CH 600V 28A TO220

Vishay Siliconix

2459 3.71
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SIHF28N60EF-GE3

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Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 28A (Tc) 10V 123mOhm @ 14A, 10V 4V @ 250µA 120 nC @ 10 V ±30V 2714 pF @ 100 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK25N60X5,S1F

TK25N60X5,S1F

MOSFET N-CH 600V 25A TO247

Toshiba Semiconductor and Storage

2779 3.71
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TK25N60X5,S1F

Datenblatt

Tube DTMOSIV-H Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Ta) 10V 140mOhm @ 7.5A, 10V 4.5V @ 1.2mA 60 nC @ 10 V ±30V 2400 pF @ 300 V - 180W (Tc) 150°C (TJ) Through Hole
IPI111N15N3GAKSA1

IPI111N15N3GAKSA1

MOSFET N-CH 150V 83A TO262-3

Infineon Technologies

2521 3.72
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IPI111N15N3GAKSA1

Datenblatt

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 150 V 83A (Tc) 8V, 10V 11.1mOhm @ 83A, 10V 4V @ 160µA 55 nC @ 10 V ±20V 3230 pF @ 75 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQA30N40

FQA30N40

MOSFET N-CH 400V 30A TO3PN

onsemi

2267 3.73
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FQA30N40

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Bulk,Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 30A (Tc) 10V 140mOhm @ 15A, 10V 5V @ 250µA 120 nC @ 10 V ±30V 4400 pF @ 25 V - 290W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFA18N65X2

IXFA18N65X2

MOSFET N-CH 650V 18A TO263

IXYS

3774 3.74
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IXFA18N65X2

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Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Tc) 10V 200mOhm @ 9A, 10V 5V @ 1.5mA 29 nC @ 10 V ±30V 1520 pF @ 25 V - 290W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STF34N65M5

STF34N65M5

MOSFET N-CH 650V 28A TO220FP

STMicroelectronics

2066 3.74
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STF34N65M5

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Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 28A (Tc) 10V 110mOhm @ 14.5A, 10V 5V @ 250µA 70 nC @ 10 V ±25V 2590 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHF35N60EF-GE3

SIHF35N60EF-GE3

MOSFET N-CH 600V 32A TO220

Vishay Siliconix

3011 3.74
- +

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SIHF35N60EF-GE3

Datenblatt

Bulk EF Active N-Channel MOSFET (Metal Oxide) 600 V 32A (Tc) 10V 97mOhm @ 17A, 10V 4V @ 250µA 134 nC @ 10 V ±30V 2568 pF @ 100 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB60R105CFD7ATMA1

IPB60R105CFD7ATMA1

MOSFET N-CH 650V 21A TO263-3-2

Infineon Technologies

2854 3.65
- +

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IPB60R105CFD7ATMA1

Datenblatt

Tape & Reel (TR) CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 21A (Tc) 10V 105mOhm @ 9.3A, 10V 4.5V @ 470µA 42 nC @ 10 V ±20V 1752 pF @ 400 V - 106W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHH125N60EF-T1GE3

SIHH125N60EF-T1GE3

MOSFET N-CH 600V 23A PPAK 8 X 8

Vishay Siliconix

3239 3.76
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SIHH125N60EF-T1GE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) EF Active N-Channel MOSFET (Metal Oxide) 600 V 23A (Tc) 10V 125mOhm @ 12A, 10V 5V @ 250µA 47 nC @ 10 V ±30V 1533 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRF1324STRL

AUIRF1324STRL

MOSFET N-CH 24V 195A D2PAK

Infineon Technologies

3634 3.76
- +

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AUIRF1324STRL

Datenblatt

Tape & Reel (TR) HEXFET® Active N-Channel MOSFET (Metal Oxide) 24 V 195A (Tc) 10V 1.65mOhm @ 195A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 7590 pF @ 24 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFA76N15T2-TRL

IXFA76N15T2-TRL

MOSFET N-CH 150V 76A TO263

IXYS

2453 3.76
- +

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Tape & Reel (TR) HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 150 V 76A (Tc) 10V 22mOhm @ 38A, 10V 4.5V @ 250µA 97 nC @ 10 V ±20V 5800 pF @ 25 V - 350W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMT1D3N08B

FDMT1D3N08B

MOSFET N-CH 80V 164A 8DL COOL88

onsemi

3361 3.76
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FDMT1D3N08B

Datenblatt

Tape & Reel (TR) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 164A (Tc) 8V, 10V 1.35mOhm @ 36A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 19600 pF @ 40 V - 178W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPT65R099CFD7XTMA1

IPT65R099CFD7XTMA1

MOSFET N-CH 650V 8HSOF

Infineon Technologies

3448 3.76
- +

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Tape & Reel (TR) CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V - - - - - - - - - - Surface Mount
IXFA16N50P3

IXFA16N50P3

MOSFET N-CH 500V 16A TO263

IXYS

3155 3.77
- +

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IXFA16N50P3

Datenblatt

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 10V 360mOhm @ 8A, 10V 5V @ 2.5mA 29 nC @ 10 V ±30V 1515 pF @ 25 V - 330W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STP8N90K5

STP8N90K5

MOSFET N-CH 900V 8A TO220

STMicroelectronics

2665 3.77
- +

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Немедленный

STP8N90K5

Datenblatt

Tube MDmesh™ K5 Active N-Channel MOSFET (Metal Oxide) 900 V 8A (Tc) 10V - 5V @ 100µA - ±30V - - 130W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM80N1R2CL C0G

TSM80N1R2CL C0G

MOSFET N-CH 800V 5.5A TO262S

Taiwan Semiconductor Corporation

3432 3.77
- +

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TSM80N1R2CL C0G

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 5.5A (Tc) 10V 1.2Ohm @ 1.8A, 10V 4V @ 250µA 19.4 nC @ 10 V ±30V 685 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) Through Hole
PSMN4R4-80PS,127

PSMN4R4-80PS,127

MOSFET N-CH 80V 100A TO220AB

Nexperia USA Inc.

3108 3.78
- +

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PSMN4R4-80PS,127

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 80 V 100A (Tc) 10V 4.1mOhm @ 15A, 10V 4V @ 1mA 125 nC @ 10 V ±20V 8400 pF @ 40 V - 306W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHH28N60E-T1-GE3

SIHH28N60E-T1-GE3

MOSFET N-CH 600V 29A PPAK 8 X 8

Vishay Siliconix

3697 3.79
- +

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SIHH28N60E-T1-GE3

Datenblatt

Bulk E Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 98mOhm @ 14A, 10V 5V @ 250µA 129 nC @ 10 V ±30V 2614 pF @ 100 V - 202W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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