Добро пожаловать Element Technology Co., Ltd.!

+86 15361839241 +86 0755-23603516
Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
R5021ANJTL

R5021ANJTL

MOSFET N-CH 500V 21A LPTS

Rohm Semiconductor

3584 3.63
- +

Добавить

Немедленный

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 500 V 21A (Tc) - 220mOhm @ 10.5A, 10V 4.5V @ 1mA 64 nC @ 10 V - 2300 pF @ 25 V - 100W (Tc) 150°C (TJ) Surface Mount
SIHFB20N50K-E3

SIHFB20N50K-E3

MOSFET N-CH 500V 20A TO220AB

Vishay Siliconix

3412 3.63
- +

Добавить

Немедленный

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 250mOhm @ 12A, 10V 5V @ 250µA 110 nC @ 10 V ±30V 2870 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA3N100D2-TRL

IXTA3N100D2-TRL

MOSFET N-CH 1000V 3A TO263

IXYS

2309 3.63
- +

Добавить

Немедленный

Tape & Reel (TR) Depletion Active N-Channel MOSFET (Metal Oxide) 1000 V 3A (Tj) 0V 6Ohm @ 1.5A, 0V 4.5V @ 250µA 37.5 nC @ 5 V ±20V 1020 pF @ 25 V Depletion Mode 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
R6515KNZC17

R6515KNZC17

MOSFET N-CH 650V 15A TO3

Rohm Semiconductor

3310 3.64
- +

Добавить

Немедленный

R6515KNZC17

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 315mOhm @ 6.5A, 10V 5V @ 430µA 27.5 nC @ 10 V ±20V 1050 pF @ 25 V - 60W (Tc) 150°C (TJ) Through Hole
R6015KNZC17

R6015KNZC17

MOSFET N-CH 600V 15A TO3PF

Rohm Semiconductor

3623 3.64
- +

Добавить

Немедленный

R6015KNZC17

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 290mOhm @ 6.5A, 10V 5V @ 1mA 27.5 nC @ 10 V ±20V 1050 pF @ 25 V - 60W (Tc) 150°C (TJ) Through Hole
R6015ENZC17

R6015ENZC17

MOSFET N-CH 600V 15A TO3PF

Rohm Semiconductor

2186 3.64
- +

Добавить

Немедленный

R6015ENZC17

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 290mOhm @ 6.5A, 10V 4V @ 1mA 40 nC @ 10 V ±20V 910 pF @ 25 V - 120W (Tc) 150°C (TJ) Through Hole
IRFP448PBF

IRFP448PBF

MOSFET N-CH 500V 11A TO247-3

Vishay Siliconix

2060 3.65
- +

Добавить

Немедленный

IRFP448PBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 600mOhm @ 6.6A, 10V 4V @ 250µA 84 nC @ 10 V ±20V 1900 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFPE30PBF

IRFPE30PBF

MOSFET N-CH 800V 4.1A TO247-3

Vishay Siliconix

3743 3.65
- +

Добавить

Немедленный

IRFPE30PBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 4.1A (Tc) 10V 3Ohm @ 2.5A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA1R4N120P-TRL

IXTA1R4N120P-TRL

MOSFET N-CH 1200V 1.4A TO263

IXYS

2533 3.66
- +

Добавить

Немедленный

Tape & Reel (TR) Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 1.4A (Tc) 10V 13Ohm @ 700mA, 10V 4.5V @ 100µA 24.8 nC @ 10 V ±30V 666 pF @ 25 V - 86W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FCMT080N65S3

FCMT080N65S3

MOSFET N-CH 650V 38A 4TDFN

onsemi

3437 3.66
- +

Добавить

Немедленный

Tape & Reel (TR) SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 38A (Tc) 10V 80mOhm @ 19A, 10V 4.5V @ 880µA 71 nC @ 10 V ±30V 2765 pF @ 400 V - 260W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTMJS2D5N06CLTWG

NTMJS2D5N06CLTWG

MOSFET N-CH 60V 3.9A/113A 8LFPAK

onsemi

3584 3.66
- +

Добавить

Немедленный

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 3.9A (Ta), 113A (Tc) 4.5V, 10V 2.4mOhm @ 50A, 10V 2V @ 135µA 52 nC @ 10 V ±20V 3600 pF @ 25 V - 3.9W (Ta), 113A (Tc) -55°C ~ 175°C (TJ) Surface Mount
NDTL03N150CG

NDTL03N150CG

MOSFET N-CH 1500V 2.5A TO3P

onsemi

3609 1.00
- +

Добавить

Немедленный

NDTL03N150CG

Datenblatt

Bulk,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 1500 V 2.5A (Ta) 10V 10.5Ohm @ 1.25A, 10V - 34 nC @ 10 V ±30V 650 pF @ 30 V - 2.5W (Ta), 140W (Tc) 150°C (TJ) Through Hole
STP35N60M2-EP

STP35N60M2-EP

MOSFET N-CH 600V TO220

STMicroelectronics

3296 3.67
- +

Добавить

Немедленный

Tape & Reel (TR) MDmesh™ M2-EP Active N-Channel MOSFET (Metal Oxide) 600 V 26A (Tc) - - - - - - - - 150°C (TJ) Through Hole
R6018ANJTL

R6018ANJTL

MOSFET N-CH 600V 18A LPTS

Rohm Semiconductor

3651 3.67
- +

Добавить

Немедленный

R6018ANJTL

Datenblatt

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Ta) 10V 270mOhm @ 9A, 10V 4.5V @ 1mA 55 nC @ 10 V ±30V 2050 pF @ 25 V - 100W (Tc) 150°C (TJ) Surface Mount
SPA15N60CFDXKSA1

SPA15N60CFDXKSA1

MOSFET N-CH 650V 13.4A TO220-FP

Infineon Technologies

2366 1.00
- +

Добавить

Немедленный

SPA15N60CFDXKSA1

Datenblatt

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 13.4A (Tc) 10V 330mOhm @ 9.4A, 10V 5V @ 750µA 84 nC @ 10 V ±20V 1820 pF @ 25 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP15N60CFDXKSA1

SPP15N60CFDXKSA1

LOW POWER_LEGACY

Infineon Technologies

2876 3.67
- +

Добавить

Немедленный

SPP15N60CFDXKSA1

Datenblatt

Tube * Not For New Designs - - - - - - - - - - - - - -
IXTA60N20T-TRL

IXTA60N20T-TRL

MOSFET N-CH 200V 60A TO263

IXYS

3285 3.68
- +

Добавить

Немедленный

Tape & Reel (TR) Trench Active N-Channel MOSFET (Metal Oxide) 200 V 60A (Tc) 10V 40mOhm @ 30A, 10V 5V @ 250µA 73 nC @ 10 V ±20V 4530 pF @ 25 V - 500W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTP14N60PM

IXTP14N60PM

MOSFET N-CH 600V 7A TO220

IXYS

3796 3.69
- +

Добавить

Немедленный

IXTP14N60PM

Datenblatt

Tube Polar Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 550mOhm @ 7A, 10V 5.5V @ 250µA 36 nC @ 10 V ±30V 2500 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP024N06N3GXKSA1

IPP024N06N3GXKSA1

MOSFET N-CH 60V 120A TO220-3

Infineon Technologies

400 2.48
- +

Добавить

Немедленный

IPP024N06N3GXKSA1

Datenblatt

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2.4mOhm @ 100A, 10V 4V @ 196µA 275 nC @ 10 V ±20V 23000 pF @ 30 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB025N10N3GE8187ATMA1

IPB025N10N3GE8187ATMA1

MOSFET N-CH 100V 180A TO263-7

Infineon Technologies

3127 3.71
- +

Добавить

Немедленный

IPB025N10N3GE8187ATMA1

Datenblatt

Tape & Reel (TR) OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 6V, 10V 2.5mOhm @ 100A, 10V 3.5V @ 275µA 206 nC @ 10 V ±20V 14800 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
Total 42446 Records«Prev1... 11761177117811791180118111821183...2123Next»
Запрос котировок
Номер запчасти
А
Связь
Электронная почта
Замечания
  • Домой

    Домой

    Продукты

    Продукты

    Телефон

    Телефон

    Пользователи

    Пользователи