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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTA10P15T-TRL

IXTA10P15T-TRL

MOSFET P-CH 150V 10A TO263

IXYS

2683 3.15
- +

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Tape & Reel (TR) TrenchP™ Active P-Channel MOSFET (Metal Oxide) 150 V 10A (Tc) 10V 350mOhm @ 5A, 10V 4.5V @ 250µA 36 nC @ 10 V ±15V 2210 pF @ 25 V - 83W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IXTA36N30P-TRL

IXTA36N30P-TRL

MOSFET N-CH 300V 36A TO263

IXYS

3586 3.15
- +

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Tape & Reel (TR) Polar Active N-Channel MOSFET (Metal Oxide) 300 V 36A (Tc) 10V 110mOhm @ 18A, 10V 5.5V @ 250µA 70 nC @ 10 V ±30V 2250 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTA50N20P-TRL

IXTA50N20P-TRL

MOSFET N-CH 200V 50A TO263

IXYS

3880 3.15
- +

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Tape & Reel (TR) Polar Active N-Channel MOSFET (Metal Oxide) 200 V 50A (Tc) 10V 60mOhm @ 25A, 10V 5V @ 250µA 70 nC @ 10 V ±20V 2720 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTA42N25P-TRL

IXTA42N25P-TRL

MOSFET N-CH 250V 42A TO263

IXYS

2640 3.15
- +

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Tape & Reel (TR) Polar Active N-Channel MOSFET (Metal Oxide) 250 V 42A (Tc) 10V 84mOhm @ 21A, 10V 5.5V @ 250µA 70 nC @ 10 V ±20V 2300 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AOK18N65L

AOK18N65L

MOSFET N-CH 650V 18A TO247

Alpha & Omega Semiconductor Inc.

3561 3.16
- +

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AOK18N65L

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Tc) 10V 390mOhm @ 9A, 10V 4.5V @ 250µA 68 nC @ 10 V ±30V 3785 pF @ 25 V - 417W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCH104N60

FCH104N60

MOSFET N-CH 600V 37A TO247-3

onsemi

3885 1.00
- +

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FCH104N60

Datenblatt

Bulk,Tube,Tube SuperFET® II Last Time Buy N-Channel MOSFET (Metal Oxide) 600 V 37A (Tc) 10V 104mOhm @ 18.5A, 10V 3.5V @ 250µA 82 nC @ 10 V ±20V 4165 pF @ 380 V - 357W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP28N65E-GE3

SIHP28N65E-GE3

MOSFET N-CH 650V 29A TO220AB

Vishay Siliconix

2740 3.16
- +

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Немедленный

SIHP28N65E-GE3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 29A (Tc) 10V 112mOhm @ 14A, 10V 4V @ 250µA 140 nC @ 10 V ±30V 3405 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP100N06S2L05AKSA2

IPP100N06S2L05AKSA2

MOSFET N-CH 55V 100A TO220-3

Infineon Technologies

340 2.12
- +

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IPP100N06S2L05AKSA2

Datenblatt

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 100A (Tc) 4.5V, 10V 4.7mOhm @ 80A, 10V 2V @ 250µA 230 nC @ 10 V ±20V 5660 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
R6015ANJTL

R6015ANJTL

MOSFET N-CH 600V 15A LPTS

Rohm Semiconductor

2047 3.17
- +

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Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) - 300mOhm @ 7.5A, 10V 4.5V @ 1mA 50 nC @ 10 V - 1700 pF @ 25 V - 100W (Tc) 150°C (TJ) Surface Mount
FCH099N60E

FCH099N60E

MOSFET N-CH 600V 37A TO247-3

onsemi

2013 1.00
- +

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FCH099N60E

Datenblatt

Bulk,Tube SuperFET® II Last Time Buy N-Channel MOSFET (Metal Oxide) 600 V 37A (Tc) 10V 99mOhm @ 18.5A, 10V 3.5V @ 250µA 114 nC @ 10 V ±20V 3465 pF @ 380 V - 357W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB0401NM5SATMA1

IPB0401NM5SATMA1

TRENCH >=100V

Infineon Technologies

3926 3.10
- +

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Tape & Reel (TR) - Active - - - - - - - - - - - - - -
IPP013N04NF2SAKMA1

IPP013N04NF2SAKMA1

TRENCH PG-TO220-3

Infineon Technologies

3592 3.18
- +

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Немедленный

Tube * Active - - - - - - - - - - - - - -
IPP027N08N5AKSA1

IPP027N08N5AKSA1

MOSFET N-CH 80V 120A TO220-3

Infineon Technologies

8256 2.13
- +

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IPP027N08N5AKSA1

Datenblatt

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 6V, 10V 2.7mOhm @ 100A, 10V 3.8V @ 154µA 123 nC @ 10 V ±20V 8970 pF @ 40 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHG22N50D-GE3

SIHG22N50D-GE3

MOSFET N-CH 500V 22A TO247AC

Vishay Siliconix

2182 3.18
- +

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Немедленный

SIHG22N50D-GE3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 22A (Tc) 10V 230mOhm @ 11A, 10V 5V @ 250µA 98 nC @ 10 V ±30V 1938 pF @ 100 V - 312W (Tc) -55°C ~ 150°C (TJ) Through Hole
NVMFS5C404NWFET1G

NVMFS5C404NWFET1G

T6-40V N 0.7 MOHMS SL

onsemi

2135 3.19
- +

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NVMFS5C404NWFET1G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 53A (Ta), 378A (Tc) 10V 700µOhm @ 50A, 10V 4V @ 250µA 128 nC @ 10 V ±20V 8400 pF @ 25 V - 3.9W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount, Wettable Flank
SIHP105N60EF-GE3

SIHP105N60EF-GE3

MOSFET N-CH 600V 29A TO220AB

Vishay Siliconix

2126 3.19
- +

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Немедленный

SIHP105N60EF-GE3

Datenblatt

Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 102mOhm @ 13A, 10V 5V @ 250µA 53 nC @ 10 V ±30V 1804 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
STI33N60M6

STI33N60M6

MOSFET N-CH 600V 25A I2PAK

STMicroelectronics

2227 3.19
- +

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Немедленный

Tube MDmesh™ M6 Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 125mOhm @ 12.5A, 10V 4.75V @ 250µA 33.4 nC @ 10 V ±25V 1515 pF @ 100 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
RCX510N25

RCX510N25

MOSFET N-CH 250V 51A TO-220FM

Rohm Semiconductor

799 4.43
- +

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Немедленный

RCX510N25

Datenblatt

Bulk,Bulk - Active N-Channel MOSFET (Metal Oxide) 250 V 51A (Ta) 10V - - - ±30V - - 40W (Tc) 150°C (TJ) Through Hole
IPB016N08NF2SATMA1

IPB016N08NF2SATMA1

TRENCH 40<-<100V PG-TO263-3

Infineon Technologies

2756 3.12
- +

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Немедленный

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
STP17NK40Z

STP17NK40Z

MOSFET N-CH 400V 15A TO220AB

STMicroelectronics

2362 3.20
- +

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Немедленный

STP17NK40Z

Datenblatt

Tube SuperMESH™ Obsolete N-Channel MOSFET (Metal Oxide) 400 V 15A (Tc) 10V 250mOhm @ 7.5A, 10V 4.5V @ 100µA 65 nC @ 10 V ±30V 1900 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
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