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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AUIRFS8407-7TRL

AUIRFS8407-7TRL

MOSFET N-CH 40V 240A D2PAK

Infineon Technologies

2683 2.90
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AUIRFS8407-7TRL

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Tape & Reel (TR) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1.3mOhm @ 100A, 10V 3.9V @ 150µA 225 nC @ 10 V ±20V 7437 pF @ 25 V - 231W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHF22N65E-GE3

SIHF22N65E-GE3

MOSFET N-CH 650V 22A TO220

Vishay Siliconix

3682 2.90
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SIHF22N65E-GE3

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Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 22A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 110 nC @ 10 V ±30V 2415 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI90R500C3XKSA2

IPI90R500C3XKSA2

MOSFET N-CH 900V 11A TO262-3

Infineon Technologies

2359 2.90
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IPI90R500C3XKSA2

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Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 900 V 11A (Tc) 10V 500mOhm @ 6.6A, 10V 3.5V @ 740µA 68 nC @ 10 V ±20V 1700 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK20A60W5,S5VX

TK20A60W5,S5VX

MOSFET N-CH 600V 20A TO220SIS

Toshiba Semiconductor and Storage

2750 2.91
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TK20A60W5,S5VX

Datenblatt

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 175mOhm @ 10A, 10V 4.5V @ 1mA 55 nC @ 10 V ±30V 1800 pF @ 300 V - 45W (Tc) 150°C (TJ) Through Hole
IXTP15P15T

IXTP15P15T

MOSFET P-CH 150V 15A TO220AB

IXYS

2673 2.92
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IXTP15P15T

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Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 150 V 15A (Tc) 10V 240mOhm @ 7A, 10V 4.5V @ 250µA 48 nC @ 10 V ±15V 3650 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP26P10T

IXTP26P10T

MOSFET P-CH 100V 26A TO220AB

IXYS

3115 2.92
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IXTP26P10T

Datenblatt

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 100 V 26A (Tc) 10V 90mOhm @ 13A, 10V 4.5V @ 250µA 52 nC @ 10 V ±15V 3820 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBC40ASTRRPBF

IRFBC40ASTRRPBF

MOSFET N-CH 600V 6.2A D2PAK

Vishay Siliconix

3554 2.92
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IRFBC40ASTRRPBF

Datenblatt

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 42 nC @ 10 V ±30V 1036 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTY8N65X2

IXTY8N65X2

MOSFET N-CH 650V 8A TO252

IXYS

3418 2.92
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IXTY8N65X2

Datenblatt

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 8A (Tc) 10V 500mOhm @ 4A, 10V 5V @ 250µA 12 nC @ 10 V ±30V 800 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NVMTS1D0N04CLTXG

NVMTS1D0N04CLTXG

T6 40V LL AIZU SINGLE NCH PQFN 8

onsemi

2427 2.92
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NVMTS1D0N04CLTXG

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 51.3A (Ta), 291A (Tc) 4.5V, 10V 1mOhm @ 50A, 10V 3V @ 210µA 122 nC @ 10 V ±20V 7408 pF @ 25 V - 4.7W (Ta), 153W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TSM80N1R2CH C5G

TSM80N1R2CH C5G

MOSFET N-CH 800V 5.5A TO251

Taiwan Semiconductor Corporation

3474 2.93
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TSM80N1R2CH C5G

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 5.5A (Tc) 10V 1.2Ohm @ 2.75A, 10V 4V @ 250µA 19.4 nC @ 10 V ±30V 685 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTY1N120P

IXTY1N120P

MOSFET N-CH 1200V 1A TO252

IXYS

2086 2.93
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IXTY1N120P

Datenblatt

Tube Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 1A (Tc) - - - - - - - - - Surface Mount
IPI60R165CPAKSA1

IPI60R165CPAKSA1

MOSFET N-CH 650V 21A TO262-3

Infineon Technologies

2010 2.93
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IPI60R165CPAKSA1

Datenblatt

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 21A (Tc) 10V 165mOhm @ 12A, 10V 3.5V @ 790µA 52 nC @ 10 V ±20V 2000 pF @ 100 V - 192W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCA20N60-F109

FCA20N60-F109

MOSFET N-CH 600V 20A TO3PN

onsemi

3791 2.93
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FCA20N60-F109

Datenblatt

Tube SuperFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 190mOhm @ 10A, 10V 5V @ 250µA 98 nC @ 10 V ±30V 3080 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
STB31N65M5

STB31N65M5

MOSFET N-CH 650V 22A D2PAK

STMicroelectronics

2925 2.93
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STB31N65M5

Datenblatt

Tape & Reel (TR),Cut Tape (CT) MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 22A (Tc) 10V 148mOhm @ 11A, 10V 5V @ 250µA 45 nC @ 10 V ±25V 1865 pF @ 100 V - 150W (Tc) 150°C (TJ) Surface Mount
STH300NH02L-6

STH300NH02L-6

MOSFET N-CH 24V 180A H2PAK

STMicroelectronics

3251 2.94
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Немедленный

STH300NH02L-6

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, STripFET™ III Active N-Channel MOSFET (Metal Oxide) 24 V 180A (Tc) 5V, 10V 1.2mOhm @ 80A, 10V 1V @ 250µA 109 nC @ 10 V ±20V 7050 pF @ 15 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS3306TRL

AUIRFS3306TRL

MOSFET N-CH 60V 120A D2PAK

Infineon Technologies

3482 1.00
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Немедленный

AUIRFS3306TRL

Datenblatt

Tape & Reel (TR),Bulk HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 4.2mOhm @ 75A, 10V 4V @ 150µA 125 nC @ 10 V ±20V 4520 pF @ 50 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF1405ZS-7TRL

AUIRF1405ZS-7TRL

MOSFET N-CH 55V 120A D2PAK

Infineon Technologies

3658 2.94
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Немедленный

AUIRF1405ZS-7TRL

Datenblatt

Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 55 V 120A (Tc) 10V 4.9mOhm @ 88A, 10V 4V @ 150µA 230 nC @ 10 V ±20V 5360 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB026N10NF2SATMA1

IPB026N10NF2SATMA1

TRENCH >=100V

Infineon Technologies

3841 2.94
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Немедленный

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
STP27N60M2-EP

STP27N60M2-EP

MOSFET N-CH 600V 20A TO220

STMicroelectronics

3804 2.95
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Немедленный

STP27N60M2-EP

Datenblatt

Tube MDmesh™ M2-EP Obsolete N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 163mOhm @ 10A, 10V 4.75V @ 250µA 33 nC @ 10 V ±25V 1320 pF @ 100 V - 170W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB65R150CFDATMA2

IPB65R150CFDATMA2

MOSFET N-CH 650V 22.4A TO263-3

Infineon Technologies

2232 2.95
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Немедленный

IPB65R150CFDATMA2

Datenblatt

Tape & Reel (TR) CoolMOS™ CFD2 Active N-Channel MOSFET (Metal Oxide) 650 V 22.4A (Tc) 10V 150mOhm @ 9.3A, 10V 4.5V @ 900µA 86 nC @ 10 V ±20V 2340 pF @ 100 V - 195.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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