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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
NVMJS0D8N04CLTWG

NVMJS0D8N04CLTWG

MOSFET N-CH 40V 56A/368A 8LFPAK

onsemi

3583 2.77
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Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 56A (Ta), 368A (Tc) 4.5V, 10V 0.72mOhm @ 50A, 10V 2V @ 250µA 162 nC @ 10 V ±20V 9600 pF @ 25 V - 4.2W (Ta), 180W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STI300N4F6

STI300N4F6

MOSFET N CH 40V 160A I2PAK

STMicroelectronics

2055 2.77
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STI300N4F6

Datenblatt

Tube DeepGATE™, STripFET™ VI Last Time Buy N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 10V 2.2mOhm @ 80A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 13800 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB100N08S207ATMA1

IPB100N08S207ATMA1

MOSFET N-CH 75V 100A TO263-3

Infineon Technologies

15000 2.11
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IPB100N08S207ATMA1

Datenblatt

Tape & Reel (TR),Bulk OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 75 V 100A (Tc) 10V 6.8mOhm @ 80A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 4700 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFSL8407

AUIRFSL8407

MOSFET N-CH 40V 195A TO262

Infineon Technologies

3527 2.77
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AUIRFSL8407

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 2mOhm @ 100A, 10V 4V @ 150µA 225 nC @ 10 V ±20V 7330 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHP12N50C-E3

SIHP12N50C-E3

MOSFET N-CH 500V 12A TO220AB

Vishay Siliconix

3469 2.77
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SIHP12N50C-E3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 12A (Tc) 10V 555mOhm @ 4A, 10V 5V @ 250µA 48 nC @ 10 V ±30V 1375 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPT65R155CFD7XTMA1

IPT65R155CFD7XTMA1

HIGH POWER_NEW

Infineon Technologies

2766 2.78
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Tape & Reel (TR) - Active - - 650 V - - - - - - - - - - Surface Mount
NVMJS0D9N04CTWG

NVMJS0D9N04CTWG

MOSFET N-CH 40V 52A/342A 8LFPAK

onsemi

3421 2.78
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Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 52A (Ta), 342A (Tc) 10V 0.81mOhm @ 50A, 10V 4V @ 250µA 117 nC @ 10 V 20V 7400 pF @ 20 V - 4.2W (Ta), 180W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NVMFS5C406NLWFT1G

NVMFS5C406NLWFT1G

MOSFET N-CH 40V 53A/362A 5DFN

onsemi

2807 2.79
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NVMFS5C406NLWFT1G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 53A (Ta), 362A (Tc) 4.5V, 10V 0.7mOhm @ 50A, 10V 2V @ 280µA 149 nC @ 10 V ±20V 9400 pF @ 20 V - 3.9W (Ta), 179W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTA48P05T-TRL

IXTA48P05T-TRL

MOSFET P-CH 50V 48A TO263

IXYS

3773 2.80
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Tape & Reel (TR) TrenchP™ Active P-Channel MOSFET (Metal Oxide) 50 V 48A (Tc) 10V 30mOhm @ 24A, 10V 4.5V @ 250µA 53 nC @ 10 V ±15V 3660 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NVMFS5C604NLAFT3G

NVMFS5C604NLAFT3G

MOSFET N-CH 60V 287A 5DFN

onsemi

2445 2.80
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NVMFS5C604NLAFT3G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 287A (Tc) 4.5V, 10V 1.2mOhm @ 50A, 10V 2V @ 250µA 52 nC @ 4.5 V ±20V 8900 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA50R199CPXKSA1

IPA50R199CPXKSA1

MOSFET N-CH 500V 17A TO220-FP

Infineon Technologies

2904 1.00
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IPA50R199CPXKSA1

Datenblatt

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 500 V 17A (Tc) 10V 199mOhm @ 9.9A, 10V 3.5V @ 660µA 45 nC @ 10 V ±20V 1800 pF @ 100 V - 139W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHA25N60EFL-E3

SIHA25N60EFL-E3

MOSFET N-CHANNEL 600V 25A TO220

Vishay Siliconix

3186 2.81
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SIHA25N60EFL-E3

Datenblatt

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 146mOhm @ 12.5A, 10V 5V @ 250µA 75 nC @ 10 V ±30V 2274 pF @ 100 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK14A55D(STA4,Q,M)

TK14A55D(STA4,Q,M)

MOSFET N-CH 550V 14A TO220SIS

Toshiba Semiconductor and Storage

3219 2.81
- +

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TK14A55D(STA4,Q,M)

Datenblatt

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 550 V 14A (Ta) 10V 370mOhm @ 7A, 10V 4V @ 1mA 40 nC @ 10 V ±30V 2300 pF @ 25 V - 50W (Tc) 150°C (TJ) Through Hole
STL28N60DM2

STL28N60DM2

MOSFET N-CH 60V 21A PWRFLAT 8X8

STMicroelectronics

2535 2.81
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STL28N60DM2

Datenblatt

Tape & Reel (TR) MDmesh™ Active - - - 21A (Tc) - - - - - - - - - -
IPP60R250CPXKSA1

IPP60R250CPXKSA1

MOSFET N-CH 650V 12A TO220-3

Infineon Technologies

3019 2.82
- +

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Немедленный

IPP60R250CPXKSA1

Datenblatt

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 250mOhm @ 7.8A, 10V 3.5V @ 440µA 35 nC @ 10 V ±20V 1200 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP125N60EF-GE3

SIHP125N60EF-GE3

MOSFET N-CH 600V 25A TO220AB

Vishay Siliconix

3488 2.82
- +

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Немедленный

SIHP125N60EF-GE3

Datenblatt

Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 125mOhm @ 12A, 10V 5V @ 250µA 47 nC @ 10 V ±30V 1533 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK20V60W,LVQ

TK20V60W,LVQ

MOSFET N-CH 600V 20A 4DFN

Toshiba Semiconductor and Storage

2384 2.83
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TK20V60W,LVQ

Datenblatt

Tape & Reel (TR),Cut Tape (CT) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 170mOhm @ 10A, 10V 3.7V @ 1mA 48 nC @ 10 V ±30V 1680 pF @ 300 V Super Junction 156W (Tc) 150°C (TJ) Surface Mount
IXTP08N120P

IXTP08N120P

MOSFET N-CH 1200V 800MA TO220AB

IXYS

3457 2.83
- +

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Немедленный

IXTP08N120P

Datenblatt

Tube Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 800mA (Tc) 10V 25Ohm @ 500mA, 10V 4.5V @ 50µA 14 nC @ 10 V ±20V 333 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFP4N100P

IXFP4N100P

MOSFET N-CH 1000V 4A TO220AB

IXYS

2131 2.83
- +

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Немедленный

IXFP4N100P

Datenblatt

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 4A (Tc) 10V 3.3Ohm @ 2A, 10V 5V @ 250µA 26 nC @ 10 V ±20V 1456 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
PJMB130N65EC_R2_00601

PJMB130N65EC_R2_00601

650V/ 130MOHM / 29A/ EASY TO DRI

Panjit International Inc.

2284 4.53
- +

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PJMB130N65EC_R2_00601

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 650 V 29A (Tc) 10V 130mOhm @ 10.8A, 10V 4V @ 250µA 51 nC @ 10 V ±30V 1920 pF @ 400 V - 235W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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