Фотографии | Производитель. Часть # | Акции | Цены | А | Таблицы данных | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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NVMJS0D8N04CLTWGMOSFET N-CH 40V 56A/368A 8LFPAK |
3583 | 2.77 |
ДобавитьНемедленный |
Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 56A (Ta), 368A (Tc) | 4.5V, 10V | 0.72mOhm @ 50A, 10V | 2V @ 250µA | 162 nC @ 10 V | ±20V | 9600 pF @ 25 V | - | 4.2W (Ta), 180W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
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STI300N4F6MOSFET N CH 40V 160A I2PAK |
2055 | 2.77 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | DeepGATE™, STripFET™ VI | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Tc) | 10V | 2.2mOhm @ 80A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 13800 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IPB100N08S207ATMA1MOSFET N-CH 75V 100A TO263-3 |
15000 | 2.11 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Bulk | OptiMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 75 V | 100A (Tc) | 10V | 6.8mOhm @ 80A, 10V | 4V @ 250µA | 200 nC @ 10 V | ±20V | 4700 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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AUIRFSL8407MOSFET N-CH 40V 195A TO262 |
3527 | 2.77 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 10V | 2mOhm @ 100A, 10V | 4V @ 150µA | 225 nC @ 10 V | ±20V | 7330 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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SIHP12N50C-E3MOSFET N-CH 500V 12A TO220AB |
3469 | 2.77 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 12A (Tc) | 10V | 555mOhm @ 4A, 10V | 5V @ 250µA | 48 nC @ 10 V | ±30V | 1375 pF @ 25 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPT65R155CFD7XTMA1HIGH POWER_NEW |
2766 | 2.78 |
ДобавитьНемедленный |
Tape & Reel (TR) | - | Active | - | - | 650 V | - | - | - | - | - | - | - | - | - | - | Surface Mount | |
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NVMJS0D9N04CTWGMOSFET N-CH 40V 52A/342A 8LFPAK |
3421 | 2.78 |
ДобавитьНемедленный |
Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 52A (Ta), 342A (Tc) | 10V | 0.81mOhm @ 50A, 10V | 4V @ 250µA | 117 nC @ 10 V | 20V | 7400 pF @ 20 V | - | 4.2W (Ta), 180W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
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NVMFS5C406NLWFT1GMOSFET N-CH 40V 53A/362A 5DFN |
2807 | 2.79 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 53A (Ta), 362A (Tc) | 4.5V, 10V | 0.7mOhm @ 50A, 10V | 2V @ 280µA | 149 nC @ 10 V | ±20V | 9400 pF @ 20 V | - | 3.9W (Ta), 179W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IXTA48P05T-TRLMOSFET P-CH 50V 48A TO263 |
3773 | 2.80 |
ДобавитьНемедленный |
Tape & Reel (TR) | TrenchP™ | Active | P-Channel | MOSFET (Metal Oxide) | 50 V | 48A (Tc) | 10V | 30mOhm @ 24A, 10V | 4.5V @ 250µA | 53 nC @ 10 V | ±15V | 3660 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
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NVMFS5C604NLAFT3GMOSFET N-CH 60V 287A 5DFN |
2445 | 2.80 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | Automotive, AEC-Q101 | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 60 V | 287A (Tc) | 4.5V, 10V | 1.2mOhm @ 50A, 10V | 2V @ 250µA | 52 nC @ 4.5 V | ±20V | 8900 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IPA50R199CPXKSA1MOSFET N-CH 500V 17A TO220-FP |
2904 | 1.00 |
ДобавитьНемедленный |
![]() Datenblatt |
Bulk,Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 500 V | 17A (Tc) | 10V | 199mOhm @ 9.9A, 10V | 3.5V @ 660µA | 45 nC @ 10 V | ±20V | 1800 pF @ 100 V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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SIHA25N60EFL-E3MOSFET N-CHANNEL 600V 25A TO220 |
3186 | 2.81 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 10V | 146mOhm @ 12.5A, 10V | 5V @ 250µA | 75 nC @ 10 V | ±30V | 2274 pF @ 100 V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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TK14A55D(STA4,Q,M)MOSFET N-CH 550V 14A TO220SIS |
3219 | 2.81 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | π-MOSVII | Active | N-Channel | MOSFET (Metal Oxide) | 550 V | 14A (Ta) | 10V | 370mOhm @ 7A, 10V | 4V @ 1mA | 40 nC @ 10 V | ±30V | 2300 pF @ 25 V | - | 50W (Tc) | 150°C (TJ) | Through Hole |
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STL28N60DM2MOSFET N-CH 60V 21A PWRFLAT 8X8 |
2535 | 2.81 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | MDmesh™ | Active | - | - | - | 21A (Tc) | - | - | - | - | - | - | - | - | - | - |
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IPP60R250CPXKSA1MOSFET N-CH 650V 12A TO220-3 |
3019 | 2.82 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | CoolMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 12A (Tc) | 10V | 250mOhm @ 7.8A, 10V | 3.5V @ 440µA | 35 nC @ 10 V | ±20V | 1200 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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SIHP125N60EF-GE3MOSFET N-CH 600V 25A TO220AB |
3488 | 2.82 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | EF | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 10V | 125mOhm @ 12A, 10V | 5V @ 250µA | 47 nC @ 10 V | ±30V | 1533 pF @ 100 V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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TK20V60W,LVQMOSFET N-CH 600V 20A 4DFN |
2384 | 2.83 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Ta) | 10V | 170mOhm @ 10A, 10V | 3.7V @ 1mA | 48 nC @ 10 V | ±30V | 1680 pF @ 300 V | Super Junction | 156W (Tc) | 150°C (TJ) | Surface Mount |
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IXTP08N120PMOSFET N-CH 1200V 800MA TO220AB |
3457 | 2.83 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 800mA (Tc) | 10V | 25Ohm @ 500mA, 10V | 4.5V @ 50µA | 14 nC @ 10 V | ±20V | 333 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IXFP4N100PMOSFET N-CH 1000V 4A TO220AB |
2131 | 2.83 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 4A (Tc) | 10V | 3.3Ohm @ 2A, 10V | 5V @ 250µA | 26 nC @ 10 V | ±20V | 1456 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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PJMB130N65EC_R2_00601650V/ 130MOHM / 29A/ EASY TO DRI |
2284 | 4.53 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | - | Discontinued at Mosen | N-Channel | MOSFET (Metal Oxide) | 650 V | 29A (Tc) | 10V | 130mOhm @ 10.8A, 10V | 4V @ 250µA | 51 nC @ 10 V | ±30V | 1920 pF @ 400 V | - | 235W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |