PMIC - Gate Drivers - Element(Гонконг) Technology Co., Ltd.

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Производитель. Часть #	Акции	Цены	А	Таблицы данных	Packaging	Series	ProductStatus	DrivenConfiguration	ChannelType	NumberofDrivers	GateType	Voltage-Supply	LogicVoltage-VILVIH	Current-PeakOutput(SourceSink)	InputType	HighSideVoltage-Max(Bootstrap)	Rise/FallTime(Typ)	OperatingTemperature	MountingType
MAX5064BATC+ IC GATE DRVR HALF-BRIDGE 12TQFN Analog Devices Inc./Maxim Integrated	181	10.69	- + Добавить Немедленный	Datenblatt	Tube	-	Active	Half-Bridge	Independent	2	N-Channel MOSFET	8V ~ 12.6V	0.8V, 2V	2A, 2A	Inverting, Non-Inverting	125 V	65ns, 65ns	-40°C ~ 150°C (TJ)	Surface Mount
MAX5057BASA+ IC GATE DRVR LOW-SIDE 8SOIC Analog Devices Inc./Maxim Integrated	893	9.73	- + Добавить Немедленный	Datenblatt	Tube	-	Not For New Designs	Low-Side	Independent	2	N-Channel MOSFET	4V ~ 15V	0.8V, 2.1V	4A, 4A	Inverting, Non-Inverting	-	32ns, 26ns	-40°C ~ 150°C (TJ)	Surface Mount
MAX15013CASA+ IC GATE DRVR HALF-BRIDGE 8SOIC Analog Devices Inc./Maxim Integrated	101	10.54	- + Добавить Немедленный	Datenblatt	Tube	-	Active	Half-Bridge	Independent	2	N-Channel MOSFET	8V ~ 12.6V	0.8V, 2V	2A, 2A	Non-Inverting	175 V	65ns, 65ns	-40°C ~ 150°C (TJ)	Surface Mount
MC33GD3100A3EK IGBT GATE DRIVE IC NXP USA Inc.	962	11.36	- + Добавить Немедленный	Datenblatt	Tube	-	Active	Half-Bridge	Single	1	IGBT, N-Channel MOSFET	3.3V	-	15A, 15A	-	-	-	-40°C ~ 125°C (TA)	Surface Mount
UC3708NE IC GATE DRVR LOW-SIDE 16DIP Texas Instruments	128	12.47	- + Добавить Немедленный	Datenblatt	Tube	-	Active	Low-Side	Independent	2	N-Channel, P-Channel MOSFET	5V ~ 35V	0.8V, 2V	3A, 3A	Non-Inverting	-	25ns, 25ns	0°C ~ 70°C (TA)	Through Hole
IR2235JTRPBF IC GATE DRVR HALF-BRIDGE 44PLCC Infineon Technologies	500	13.33	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	-	Active	Half-Bridge	3-Phase	6	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2V	250mA, 500mA	Inverting	1200 V	90ns, 40ns	125°C (TJ)	Surface Mount
MAX15013AASA+ IC GATE DRVR HALF-BRIDGE 8SOIC Analog Devices Inc./Maxim Integrated	3399	7.62	- + Добавить Немедленный	Datenblatt	Tube	-	Active	Half-Bridge	Independent	2	N-Channel MOSFET	8V ~ 12.6V	0.8V, 2V	2A, 2A	Non-Inverting	175 V	65ns, 65ns	-40°C ~ 150°C (TJ)	Surface Mount
LT1158CN#PBF IC GATE DRVR HALF-BRIDGE 16DIP Analog Devices Inc.	175	10.27	- + Добавить Немедленный	Datenblatt	Tube	-	Active	Half-Bridge	Synchronous	2	N-Channel MOSFET	5V ~ 30V	0.8V, 2V	500mA, 500mA	Inverting, Non-Inverting	56 V	130ns, 120ns	0°C ~ 125°C (TJ)	Through Hole
IXDD630MCI IC GATE DRVR LOW-SIDE TO220-5 IXYS Integrated Circuits Division	336	9.56	- + Добавить Немедленный	Datenblatt	Tube	-	Active	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	9V ~ 35V	0.8V, 3.5V	30A, 30A	Non-Inverting	-	11ns, 11ns	-55°C ~ 150°C (TJ)	Through Hole
IXDN630MYI IC GATE DRVR LOW-SIDE TO263-5 IXYS Integrated Circuits Division	162	9.56	- + Добавить Немедленный	Datenblatt	Tube	-	Active	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	9V ~ 35V	0.8V, 3.5V	30A, 30A	Non-Inverting	-	11ns, 11ns	-55°C ~ 150°C (TJ)	Surface Mount
LT1336IS#PBF IC GATE DRVR HALF-BRIDGE 16SOIC Analog Devices Inc.	986	11.53	- + Добавить Немедленный	Datenblatt	Tube	-	Active	Half-Bridge	Independent	2	N-Channel MOSFET	10V ~ 15V	0.8V, 2V	1.5A, 1.5A	Non-Inverting	60 V	130ns, 60ns	-40°C ~ 125°C (TJ)	Surface Mount
LTC1155IS8#PBF IC GATE DRVR HIGH-SIDE 8SOIC Analog Devices Inc.	2430	12.11	- + Добавить Немедленный	Datenblatt	Tube	-	Active	High-Side	Independent	2	N-Channel MOSFET	4.5V ~ 18V	0.8V, 2V	-	Non-Inverting	-	-	-40°C ~ 85°C (TA)	Surface Mount
IR2233JPBF IC GATE DRVR HALF-BRIDGE 44PLCC Infineon Technologies	305	12.24	- + Добавить Немедленный	Datenblatt	Tube	-	Active	Half-Bridge	3-Phase	6	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2V	250mA, 500mA	Inverting	1200 V	90ns, 40ns	125°C (TJ)	Surface Mount
UC3709N IC GATE DRVR LOW-SIDE 8DIP Texas Instruments	284	12.57	- + Добавить Немедленный	Datenblatt	Tube	-	Active	Low-Side	Independent	2	N-Channel, P-Channel MOSFET	5V ~ 40V	0.8V, 2.2V	1.5A, 1.5A	Inverting	-	20ns, 20ns	-55°C ~ 125°C (TJ)	Through Hole
IR2130PBF IC GATE DRVR HALF-BRIDGE 28DIP Infineon Technologies	843	17.20	- + Добавить Немедленный	Datenblatt	Tube	-	Not For New Designs	Half-Bridge	3-Phase	6	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.2V	250mA, 500mA	Inverting	600 V	80ns, 35ns	-40°C ~ 150°C (TJ)	Through Hole
2SC0115T2A0-12 IC GATE DRVR HI/LOW SIDE MODULE Power Integrations	2928	38.01	- + Добавить Немедленный	Datenblatt	Tray	SCALE™-2	Active	High-Side or Low-Side	Independent	2	IGBT	14.5V ~ 15.5V	-	15A, 15A	-	1200 V	6ns, 12ns	-40°C ~ 105°C (TA)	Surface Mount
2SP0115T2A0-17 IC GATE DRVR HALF-BRIDGE MODULE Power Integrations	139	95.45	- + Добавить Немедленный	Datenblatt	Tray	SCALE™-2	Active	Half-Bridge	Independent	2	IGBT	14.5V ~ 15.5V	-	8A, 15A	-	1700 V	5ns, 10ns	-20°C ~ 85°C (TA)	Surface Mount
2SP0115T2B0-17 IC GATE DRVR HALF-BRIDGE MODULE Power Integrations	2587	105.00	- + Добавить Немедленный	Datenblatt	Tray	SCALE™-2	Active	Half-Bridge	Independent	2	IGBT	14.5V ~ 15.5V	-	8A, 15A	-	1700 V	5ns, 10ns	-20°C ~ 85°C (TA)	Surface Mount
2SD300C17A4 IC GATE DRVR HALF-BRIDGE 1700V Power Integrations	3174	133.87	- + Добавить Немедленный		Tray	SCALE™-2	Active	Half-Bridge	-	2	IGBT	14V ~ 16V	-	30A, 30A	-	-	-	-40°C ~ 85°C (TA)	Through Hole
2SP0320T2A0-12 IC GATE DRVR HALF-BRIDGE MODULE Power Integrations	3512	193.16	- + Добавить Немедленный	Datenblatt	Tray	SCALE™-2	Active	Half-Bridge	Independent	2	IGBT	14.5V ~ 15.5V	-	20A, 20A	-	1200 V	7ns, 25ns	-40°C ~ 85°C (TA)	Surface Mount