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| Фотографии | Производитель. Часть # | Акции | Цены | А | Таблицы данных | Packaging | Series | ProductStatus | DrivenConfiguration | ChannelType | NumberofDrivers | GateType | Voltage-Supply | LogicVoltage-VILVIH | Current-PeakOutput(SourceSink) | InputType | HighSideVoltage-Max(Bootstrap) | Rise/FallTime(Typ) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MIC5013YMIC GATE DRVR HI/LOW SIDE 8SOIC |
495 | 5.94 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | High-Side or Low-Side | Single | 1 | N-Channel MOSFET | 7V ~ 32V | 2V, 4.5V | - | Non-Inverting | - | - | -40°C ~ 85°C (TA) | Surface Mount |
|
MAX1614EUA+IC GATE DRVR HIGH-SIDE 8UMAX |
624 | 6.07 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | High-Side | Single | 1 | N-Channel MOSFET | 5V ~ 26V | 0.6V, 2V | - | Non-Inverting | - | - | -40°C ~ 150°C (TJ) | Surface Mount |
|
MAX15019AASA+IC GATE DRVR HALF-BRIDGE 8SOIC |
3803 | 6.47 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8V ~ 12.6V | 0.8V, 2V | 3A, 3A | Non-Inverting | 125 V | 50ns, 40ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
IR2181PBFIC GATE DRVR HALF-BRIDGE 8DIP |
245 | 6.56 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Not For New Designs | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.7V | 1.9A, 2.3A | Non-Inverting | 600 V | 40ns, 20ns | -40°C ~ 150°C (TJ) | Through Hole |
|
EL7104CSZIC GATE DRVR LOW-SIDE 8SOIC |
2707 | 6.89 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5V ~ 16V | 0.8V, 2.4V | 4A, 4A | Non-Inverting | - | 7.5ns, 10ns | -40°C ~ 125°C (TJ) | Surface Mount |
|
|
IR2302PBFIC GATE DRVR HALF-BRIDGE 8DIP |
587 | 7.60 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Not For New Designs | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 5V ~ 20V | 0.8V, 2.9V | 200mA, 350mA | Non-Inverting | 600 V | 130ns, 50ns | -40°C ~ 150°C (TJ) | Through Hole |
|
|
TC4405COAIC GATE DRVR LOW-SIDE 8SOIC |
312 | 3.70 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 40ns, 40ns (Max) | 0°C ~ 70°C (TA) | Surface Mount |
|
|
SM74104MA/NOPBIC GATE DRVR HALF-BRIDGE 8SOIC |
166 | 3.75 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 9V ~ 14V | 0.8V, 2V | 1.6A, 1.6A | Non-Inverting | 118 V | 600ns, 600ns | -40°C ~ 125°C (TJ) | Surface Mount |
|
|
MAX4429CPA+IC GATE DRVR LOW-SIDE 8DIP |
230 | 3.76 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 6A, 6A | Inverting | - | 25ns, 25ns | 0°C ~ 70°C (TA) | Through Hole |
|
|
MAX4420CPA+IC GATE DRVR LOW-SIDE 8DIP |
169 | 3.76 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 6A, 6A | Non-Inverting | - | 25ns, 25ns | 0°C ~ 70°C (TA) | Through Hole |
|
BD16950EFV-CE2IC GATE DRVR HALF-BRIDG 24HTSSOP |
2127 | 6.46 |
ДобавитьНемедленный |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q100 | Active | Half-Bridge | Independent | 2 | N-Channel MOSFET | 3V ~ 5.5V | - | - | Non-Inverting | - | - | -40°C ~ 150°C (TJ) | Surface Mount |
|
IR2213PBFIC GATE DRVR HALF-BRIDGE 14DIP |
2514 | 8.84 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 12V ~ 20V | 6V, 9.5V | 2A, 2.5A | Non-Inverting | 1200 V | 25ns, 17ns | -55°C ~ 150°C (TJ) | Through Hole |
|
|
MAX626CPA+IC GATE DRVR LOW-SIDE 8DIP |
201 | 9.19 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 2A, 2A | Inverting | - | 25ns, 20ns | 0°C ~ 70°C (TA) | Through Hole |
|
|
MAX627CPA+IC GATE DRVR LOW-SIDE 8DIP |
119 | 9.19 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 2A, 2A | Non-Inverting | - | 25ns, 20ns | 0°C ~ 70°C (TA) | Through Hole |
|
|
UCC27322MDEPIC POWER MANAGEMENT |
2188 | 9.25 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4V ~ 15V | 1V, 2V | 9A, 9A | Non-Inverting | - | 20ns, 20ns | -55°C ~ 125°C (TJ) | Surface Mount |
|
IXDI630YIIC GATE DRVR LOW-SIDE TO263-5 |
271 | 9.56 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 12.5V ~ 35V | 0.8V, 3.5V | 30A, 30A | Inverting | - | 11ns, 11ns | -55°C ~ 150°C (TJ) | Surface Mount |
|
IXDN630MCIIC GATE DRVR LOW-SIDE TO220-5 |
111 | 9.56 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 9V ~ 35V | 0.8V, 3.5V | 30A, 30A | Non-Inverting | - | 11ns, 11ns | -55°C ~ 150°C (TJ) | Through Hole |
|
MAX5056BASA+IC GATE DRVR LOW-SIDE 8SOIC |
262 | 9.73 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Not For New Designs | Low-Side | Independent | 2 | N-Channel MOSFET | 4V ~ 15V | 0.8V, 2.1V | 4A, 4A | Non-Inverting | - | 32ns, 26ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
MAX620CWN+IC GATE DRVR HIGH-SIDE 18SOIC |
324 | 9.83 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | High-Side | Independent | 4 | N-Channel MOSFET | 4.5V ~ 16.5V | 0.8V, 2.4V | - | Non-Inverting | - | 1.7µs, 2.5µs | 0°C ~ 70°C (TA) | Surface Mount |
|
|
UC2705DIC GATE DRVR LOW-SIDE 8SOIC |
232 | 10.05 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | Low-Side | Single | 1 | N-Channel MOSFET | 5V ~ 40V | 0.8V, 2.2V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 60ns, 60ns | -25°C ~ 85°C (TA) | Surface Mount |
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