Diodes-Rectifiers-Single - Element(Гонконг) Technology Co., Ltd.

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Производитель. Часть #	Акции	Цены	А	Таблицы данных	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
SS16LSHRVG DIODE SCHOTTKY 60V 1A SOD123HE Taiwan Semiconductor Corporation	285	0.32	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	80pF @ 4V, 1MHz	-	400 µA @ 60 V	60 V	1A	-55°C ~ 150°C	700 mV @ 1 A
FFSD0665B-F085 650V 6A SIC SBD GEN1.5 onsemi	675	2.11	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	259pF @ 1V, 100kHz	0 ns	40 µA @ 650 V	650 V	9.1A (DC)	-55°C ~ 175°C	1.7 V @ 6 A
FMU-G16S DIODE GEN PURP 600V 5A TO220F-2L Sanken	475	0.84	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	-	400 ns	50 µA @ 600 V	600 V	5A	-40°C ~ 150°C	1.25 V @ 5 A
LSIC2SD065E20CCA DIODE SCHOTTKY SIC 650V 10A DUAL Littelfuse Inc.	1220	11.59	- + Добавить Немедленный	Datenblatt	Tube	Automotive, AEC-Q101, GEN2	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	470pF @ 1V, 1MHz	0 ns	50 µA @ 650 V	650 V	27A (DC)	-55°C ~ 175°C	1.8 V @ 10 A
SS10P6-M3/87A DIODE SCHOTTKY 60V 7A TO277A Vishay General Semiconductor - Diodes Division	3180	0.95	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	eSMP®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	150 µA @ 60 V	60 V	7A	-55°C ~ 150°C	550 mV @ 7 A
S1FLB-GS08 DIODE GP 100V 700MA DO219AB Vishay General Semiconductor - Diodes Division	377	0.33	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	4pF @ 4V, 1MHz	1.8 µs	10 µA @ 100 V	100 V	700mA	-55°C ~ 150°C	1.1 V @ 1 A
ACDBA1100LR-HF DIODE SCHOTTKY 100V 1A DO214AC Comchip Technology	2204	2.14	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	120pF @ 4V, 1MHz	-	500 µA @ 100 V	100 V	1A	-55°C ~ 150°C	750 mV @ 1 A
FMD-G26S DIODE GEN PURP 600V 10A TO220FP Sanken	377	0.84	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	-	50 ns	100 µA @ 600 V	600 V	10A	-40°C ~ 150°C	1.7 V @ 10 A
GP3D020A120B SIC SCHOTTKY DIODE 1200V TO247-2 SemiQ	1156	11.78	- + Добавить Немедленный	Datenblatt	Tube	Amp+™	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	1179pF @ 1V, 1MHz	0 ns	40 µA @ 1200 V	1200 V	20A	-55°C ~ 175°C	1.65 V @ 20 A
SF38G A0G DIODE GEN PURP 600V 3A DO201AD Taiwan Semiconductor Corporation	253	0.95	- + Добавить Немедленный	Datenblatt	Cut Tape (CT),Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	35 ns	5 µA @ 600 V	600 V	3A	-55°C ~ 150°C	1.7 V @ 3 A
CDBU0230R-HF DIODE SCHOTTKY 30V 200MA 0603 Comchip Technology	101	0.33	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)		RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Active	Surface Mount	-	-	1 µA @ 10 V	30 V	200mA	125°C (Max)	600 mV @ 200 mA
SICU0260B-TP 650V,2A,SIC SBD,TO-252 PACKAGE Micro Commercial Co	1663	2.17	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	175pF @ 0V, 1MHz	-	10 µA @ 650 V	650 V	2A	-55°C ~ 175°C	1.6 V @ 2 A
HS3DB R5G DIODE GEN PURP 200V 3A DO214AA Taiwan Semiconductor Corporation	247	0.84	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	80pF @ 4V, 1MHz	50 ns	10 µA @ 200 V	200 V	3A	-55°C ~ 150°C	1 V @ 3 A
JANTX1N6642US DIODE GEN PURP 75V 300MA D-5D MACOM Technology Solutions	297	11.86	- + Добавить Немедленный	Datenblatt	Bulk	Military, MIL-PRF-19500/578 & /609	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	-	5 ns	100 µA @ 75 V	75 V	300mA	-65°C ~ 175°C	1.2 V @ 100 mA
MUR420 A0G DIODE GEN PURP 200V 4A DO201AD Taiwan Semiconductor Corporation	213	0.95	- + Добавить Немедленный	Datenblatt	Cut Tape (CT),Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	65pF @ 4V, 1MHz	25 ns	5 µA @ 200 V	200 V	4A	-55°C ~ 175°C	890 mV @ 4 A
HS2MA R3G DIODE GEN PURP 1KV 1.5A DO214AC Taiwan Semiconductor Corporation	994	0.58	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	30pF @ 4V, 1MHz	75 ns	5 µA @ 1000 V	1000 V	1.5A	-55°C ~ 150°C	1.7 V @ 1.5 A
BAT54TR DIODE SCHOTTKY 30V SOT23 SMC Diode Solutions	402	0.34	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	10pF @ 5V, 1MHz	5 ns	1 µA @ 30 V	30 V	-	150°C (Max)	900 mV @ 100 mA
WNSC04650T6J SILICON CARBIDE POWER DIODE WeEn Semiconductors	1943	2.23	- + Добавить Немедленный		Tape & Reel (TR),Cut Tape (CT)		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	141pF @ 1V, 1MHz	0 ns	25 µA @ 650 V	650 V	4A	175°C (Max)	1.7 V @ 4 A
SDUR1020 DIODE GEN PURP 200V TO220AC SMC Diode Solutions	1000	0.85	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 5V, 1MHz	35 ns	15 µA @ 200 V	200 V	-	-55°C ~ 150°C	1.15 V @ 10 A
E3D20065D 650V AUTOMOTIVE SIC DIODE Wolfspeed, Inc.	420	12.79	- + Добавить Немедленный	Datenblatt	Tube	E-Series, Automotive	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	459pF @ 0V, 1MHz	0 ns	60 µA @ 650 V	650 V	56A (DC)	-55°C ~ 175°C	1.8 V @ 10 A