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Производитель. Часть #	Акции	А	Таблицы данных	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
SR803HB0G DIODE SCHOTTKY 30V 8A DO201AD Taiwan Semiconductor Corporation	2695	- + Добавить Немедленный	Datenblatt	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 30 V	30 V	8A	-55°C ~ 125°C	550 mV @ 8 A
SFF1005GHC0G DIODE GEN PURP 300V 10A ITO220AB Taiwan Semiconductor Corporation	3742	- + Добавить Немедленный	Datenblatt	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 0V, 1MHz	35 ns	10 µA @ 300 V	300 V	10A	-55°C ~ 150°C	1.3 V @ 10 A
S1M-TP DIODE GEN PURP 1KV 1A DO214AA Micro Commercial Co	2626	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	12pF @ 4V, 1MHz	2 µs	5 µA @ 1000 V	1000 V	1A	-55°C ~ 150°C	1.1 V @ 1 A
ES1HR3G DIODE GEN PURP 500V 1A DO214AC Taiwan Semiconductor Corporation	3904	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	16pF @ 4V, 1MHz	35 ns	5 µA @ 500 V	500 V	1A	-55°C ~ 150°C	1.7 V @ 1 A
MUR160HB0G DIODE GEN PURP 600V 1A DO204AC Taiwan Semiconductor Corporation	3641	- + Добавить Немедленный	Datenblatt	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	27pF @ 4V, 1MHz	50 ns	5 µA @ 600 V	600 V	1A	-55°C ~ 175°C	1.25 V @ 1 A
SS25LHRQG DIODE SCHOTTKY 50V 2A SUB SMA Taiwan Semiconductor Corporation	2495	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 50 V	50 V	2A	-55°C ~ 150°C	700 mV @ 2 A
SR804 B0G DIODE SCHOTTKY 40V 8A DO201AD Taiwan Semiconductor Corporation	3549	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Through Hole	-	-	500 µA @ 40 V	40 V	8A	-55°C ~ 125°C	550 mV @ 8 A
SFF1006GAHC0G DIODE GEN PURP 400V 10A ITO220AB Taiwan Semiconductor Corporation	2262	- + Добавить Немедленный	Datenblatt	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	35 ns	10 µA @ 400 V	400 V	10A	-55°C ~ 150°C	1.3 V @ 5 A
FDLL4148_NBD3001 DIODE GEN PURP 100V 200MA SOD80 onsemi	2662	- + Добавить Немедленный		Bulk		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Obsolete	Surface Mount	4pF @ 0V, 1MHz	4 ns	5 µA @ 75 V	100 V	200mA	-65°C ~ 175°C	1 V @ 10 mA
ES1JHR3G DIODE GEN PURP 600V 1A DO214AC Taiwan Semiconductor Corporation	2524	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	16pF @ 4V, 1MHz	35 ns	5 µA @ 600 V	600 V	1A	-55°C ~ 150°C	1.7 V @ 1 A
MUR190 B0G DIODE GEN PURP 900V 1A DO204AC Taiwan Semiconductor Corporation	2635	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	75 ns	5 µA @ 900 V	900 V	1A	-55°C ~ 175°C	1.7 V @ 1 A
SS25LHRTG DIODE SCHOTTKY 50V 2A SUB SMA Taiwan Semiconductor Corporation	3603	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 50 V	50 V	2A	-55°C ~ 150°C	700 mV @ 2 A
SR804HB0G DIODE SCHOTTKY 40V 8A DO201AD Taiwan Semiconductor Corporation	2110	- + Добавить Немедленный	Datenblatt	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 40 V	40 V	8A	-55°C ~ 125°C	550 mV @ 8 A
SFF1006GHC0G DIODE GEN PURP 400V 10A ITO220AB Taiwan Semiconductor Corporation	3739	- + Добавить Немедленный	Datenblatt	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 0V, 1MHz	35 ns	10 µA @ 400 V	400 V	10A	-55°C ~ 150°C	1.3 V @ 10 A
MMSD4148_G DIODE GEN PURP 100V 200MA SOD123 onsemi	2368	- + Добавить Немедленный		Bulk		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Obsolete	Surface Mount	4pF @ 0V, 1MHz	4 ns	5 µA @ 75 V	100 V	200mA	150°C (Max)	1 V @ 10 mA
ES1JL RFG DIODE GEN PURP 600V 1A SUB SMA Taiwan Semiconductor Corporation	2622	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	8pF @ 1V, 1MHz	35 ns	5 µA @ 600 V	600 V	1A	-55°C ~ 150°C	1.7 V @ 1 A
MUR190A B0G DIODE GEN PURP 900V 1A DO204AL Taiwan Semiconductor Corporation	2006	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	75 ns	5 µA @ 900 V	900 V	1A	-55°C ~ 175°C	1.7 V @ 1 A
SS26L MQG DIODE SCHOTTKY 60V 2A SUB SMA Taiwan Semiconductor Corporation	2165	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 60 V	60 V	2A	-55°C ~ 150°C	700 mV @ 2 A
SR805 B0G DIODE SCHOTTKY 50V 8A DO201AD Taiwan Semiconductor Corporation	2806	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 50 V	50 V	8A	-55°C ~ 150°C	700 mV @ 8 A
SFF1007G C0G DIODE GEN PURP 500V 10A ITO220AB Taiwan Semiconductor Corporation	3536	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 0V, 1MHz	35 ns	10 µA @ 500 V	500 V	10A	-55°C ~ 150°C	1.7 V @ 5 A