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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
HER606G B0G

HER606G B0G

DIODE GEN PURP 600V 6A R-6

Taiwan Semiconductor Corporation

3996 0.00
- +

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Немедленный

HER606G B0G

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 65pF @ 4V, 1MHz 75 ns 10 µA @ 600 V 600 V 6A -55°C ~ 150°C 1.7 V @ 6 A
SS25L RQG

SS25L RQG

DIODE SCHOTTKY 50V 2A SUB SMA

Taiwan Semiconductor Corporation

3636 0.00
- +

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SS25L RQG

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 400 µA @ 50 V 50 V 2A -55°C ~ 150°C 700 mV @ 2 A
SR802 B0G

SR802 B0G

DIODE SCHOTTKY 20V 8A DO201AD

Taiwan Semiconductor Corporation

2192 0.00
- +

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Немедленный

SR802 B0G

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 20 V 20 V 8A -55°C ~ 125°C 550 mV @ 8 A
SFF1004GHC0G

SFF1004GHC0G

DIODE GEN PURP 200V 10A ITO220AB

Taiwan Semiconductor Corporation

2052 0.00
- +

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SFF1004GHC0G

Datenblatt

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 70pF @ 4V, 1MHz 35 ns 10 µA @ 200 V 200 V 10A -55°C ~ 150°C 975 mV @ 10 A
S1G-TP

S1G-TP

DIODE GEN PURP 400V 1A DO214AA

Micro Commercial Co

3685 0.00
- +

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Немедленный

S1G-TP

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 12pF @ 4V, 1MHz 2 µs 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1.1 V @ 1 A
ES1GL RFG

ES1GL RFG

DIODE GEN PURP 400V 1A SUB SMA

Taiwan Semiconductor Corporation

2270 0.00
- +

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Немедленный

ES1GL RFG

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 8pF @ 1V, 1MHz 35 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1.3 V @ 1 A
MUR160 B0G

MUR160 B0G

DIODE GEN PURP 600V 1A DO204AC

Taiwan Semiconductor Corporation

2294 0.00
- +

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Немедленный

MUR160 B0G

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 27pF @ 4V, 1MHz 50 ns 5 µA @ 600 V 600 V 1A -55°C ~ 175°C 1.25 V @ 1 A
SS25L RTG

SS25L RTG

DIODE SCHOTTKY 50V 2A SUB SMA

Taiwan Semiconductor Corporation

2661 0.00
- +

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Немедленный

SS25L RTG

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 400 µA @ 50 V 50 V 2A -55°C ~ 150°C 700 mV @ 2 A
SR802HB0G

SR802HB0G

DIODE SCHOTTKY 20V 8A DO201AD

Taiwan Semiconductor Corporation

2422 0.00
- +

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Немедленный

SR802HB0G

Datenblatt

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 20 V 20 V 8A -55°C ~ 125°C 550 mV @ 8 A
SFF1005GA C0G

SFF1005GA C0G

DIODE GEN PURP 300V 10A ITO220AB

Taiwan Semiconductor Corporation

2128 0.00
- +

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Немедленный

SFF1005GA C0G

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz 35 ns 10 µA @ 300 V 300 V 10A -55°C ~ 150°C 1.3 V @ 5 A
S1J-TP

S1J-TP

DIODE GEN PURP 600V 1A DO214AA

Micro Commercial Co

3374 0.00
- +

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Немедленный

S1J-TP

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 12pF @ 4V, 1MHz 2 µs 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.1 V @ 1 A
ES1GLHRFG

ES1GLHRFG

DIODE GEN PURP 400V 1A SUB SMA

Taiwan Semiconductor Corporation

2486 0.00
- +

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Немедленный

ES1GLHRFG

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 8pF @ 4V, 1MHz 35 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1.3 V @ 1 A
MUR160A B0G

MUR160A B0G

DIODE GEN PURP 600V 1A DO204AL

Taiwan Semiconductor Corporation

2309 0.00
- +

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Немедленный

MUR160A B0G

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 27pF @ 4V, 1MHz 50 ns 5 µA @ 600 V 600 V 1A -55°C ~ 175°C 1.25 V @ 1 A
SS25LHMQG

SS25LHMQG

DIODE SCHOTTKY 50V 2A SUB SMA

Taiwan Semiconductor Corporation

2088 0.00
- +

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Немедленный

SS25LHMQG

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 400 µA @ 50 V 50 V 2A -55°C ~ 150°C 700 mV @ 2 A
SR803 B0G

SR803 B0G

DIODE SCHOTTKY 30V 8A DO201AD

Taiwan Semiconductor Corporation

3510 0.00
- +

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Немедленный

SR803 B0G

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 30 V 30 V 8A -55°C ~ 125°C 550 mV @ 8 A
SFF1005GAHC0G

SFF1005GAHC0G

DIODE GEN PURP 300V 10A ITO220AB

Taiwan Semiconductor Corporation

3289 0.00
- +

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Немедленный

SFF1005GAHC0G

Datenblatt

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz 35 ns 10 µA @ 300 V 300 V 10A -55°C ~ 150°C 1.3 V @ 5 A
S1K-TP

S1K-TP

DIODE GEN PURP 800V 1A DO214AA

Micro Commercial Co

3912 0.00
- +

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Немедленный

S1K-TP

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 12pF @ 4V, 1MHz 2 µs 5 µA @ 800 V 800 V 1A -55°C ~ 150°C 1.1 V @ 1 A
ES1HL RFG

ES1HL RFG

DIODE GEN PURP 500V 1A SUB SMA

Taiwan Semiconductor Corporation

3693 0.00
- +

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Немедленный

ES1HL RFG

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 8pF @ 1V, 1MHz 35 ns 5 µA @ 500 V 500 V 1A -55°C ~ 150°C 1.7 V @ 1 A
MUR160AHB0G

MUR160AHB0G

DIODE GEN PURP 600V 1A DO204AL

Taiwan Semiconductor Corporation

2732 0.00
- +

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Немедленный

MUR160AHB0G

Datenblatt

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 27pF @ 4V, 1MHz 50 ns 5 µA @ 600 V 600 V 1A -55°C ~ 175°C 1.25 V @ 1 A
SS25LHMTG

SS25LHMTG

DIODE SCHOTTKY 50V 2A SUB SMA

Taiwan Semiconductor Corporation

2578 0.00
- +

Добавить

Немедленный

SS25LHMTG

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 400 µA @ 50 V 50 V 2A -55°C ~ 150°C 700 mV @ 2 A
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